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34. Efficient Glucose Isomerization to Fructose using Photoregenerable MgSnO3 Catalyst with Cooperative Acid‐Base Sites.

Author

Wang, Peixin, Xue, Wenhua, Ye, Jian, Zhang, Ruilong, Kumar, Reeti, Cai, Wenfei, and Zhao, Jun

Subjects
CATALYST poisoning, CATALYST selectivity, HETEROGENEOUS catalysis, HETEROGENEOUS catalysts, BIOMASS conversion
Abstract

The isomerization of glucose to fructose plays a crucial role in the food industry and the production of biomass‐derived chemicals in biorefineries. However, the catalyst used in this reaction suffers from low selectivity and catalyst deactivation due to carbon or by‐product deposition. In this study, MgSnO3 catalyst, synthesized via a facile two‐step process involving hydrothermal treatment and calcination, was used for glucose isomerization to fructose. The catalyst demonstrated outstanding catalytic performance, achieving a fructose equilibrium yield of 29.8 % with a selectivity exceeding 90 % under mild conditions owing to its acid‐base interaction. Notably, spent catalysts can be regenerated by photoirradiation to remove surface carbon, thereby avoiding the changes in properties and subsequent loss of activity associated with conventional calcination regeneration method. This novel approach eliminates the energy consumption and potential structural aggregation associated with traditional calcination regeneration methods. The acid‐base active sites of the catalyst, along with their corresponding catalytic reaction mechanism and photoregeneration mechanism were investigated. This study presents a demonstration of the comprehensive utilization of catalytic material properties, i. e. acid‐base and photocatalytic functionalities, for the development of a green and sustainable biomass thermochemical conversion system. [ABSTRACT FROM AUTHOR]

Published
2024
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35. Plasticity in single-crystalline Mg3Bi2 thermoelectric material.

Author

Zhao, Peng, Xue, Wenhua, Zhang, Yue, Zhi, Shizhen, Ma, Xiaojing, Qiu, Jiamin, Zhang, Tianyu, Ye, Sheng, Mu, Huimin, Cheng, Jinxuan, Wang, Xiaodong, Hou, Shuaihang, Zhao, Lijia, Xie, Guoqiang, Cao, Feng, Liu, Xingjun, Mao, Jun, Fu, Yuhao, Wang, Yumei, and Zhang, Qian

Abstract

Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2 shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the ab plane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2 shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the ab plane, which outperforms the existing ductile thermoelectric materials3,4.The thermoelectric material Mg3Bi2 is shown to be ductile in single-crystal form along certain directions, with a room-temperature tensile strain of 100%, which is attributed to the gliding of dislocations. [ABSTRACT FROM AUTHOR]

Published
2024
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36. Interstitial Defect Modulation Promotes Thermoelectric Properties of p‐Type HfNiSn.

Author

Ai, Xin, Xue, Wenhua, Giebeler, Lars, Pérez, Nicolás, Lei, Binghua, Zhang, Yue, Zhang, Qihao, Nielsch, Kornelius, Wang, Yumei, and He, Ran

Subjects
*INTERSTITIAL defects, *THERMOELECTRIC materials, *CARRIER density, *HEUSLER alloys
Abstract

The n‐type MNiSn (M = Ti, Zr, or Hf) half‐Heusler compounds are reported as promising medium‐ and high‐temperature thermoelectric materials; however, their p‐type counterparts have suffered from poor performance due to the in‐gap state caused by Ni occupying the tetrahedral interstitials. Inspired by recent findings that thermoelectric performance can be enhanced without substantially increasing compositional or structural complexity, the study attempts to manipulate the Ni interstitial defects by altering the stoichiometric composition. The results show that when HfNiSn is prepared by a non‐equilibrium method, the intrinsic Ni defects are effectively suppressed by simply reducing the nominal Ni content. The suppression of Ni defects not only leads to a larger bandgap, but also attenuates carrier scattering to achieve higher mobility. After further optimization of the carrier concentration, the p‐type HfNi0.85Co0.05Sn achieves a maximum power factor of 3100 µW m−1 K−2 at 773 K and a peak zT of ≈0.7 at 973 K, both of which are superior to that of the state‐of‐the‐art p‐type MNiSn. The results demonstrate that the off‐stoichiometric ratio is effective in decoupling electron‐phonon transports of thermoelectric materials with massive intrinsic defects, and also contribute to understanding the role of defect modulation in optimizing thermoelectric properties. [ABSTRACT FROM AUTHOR]

Published
2024
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43. Detection of sivelestat and its metabolite in small volumes of plasma from Chinese ALI/ARDS patients with SIRS via high-throughput UPLC-MS/MS: A pharmacokinetic study

Author

Liu, Mingzhou, Zhang, Jing, Dong, Lingfang, Xue, Wenhua, He, Qilin, Liang, Wenzhong, Liu, Xing, Zhang, Jingying, Gu, Li, Feng, Yinghua, Yang, Jie, Wang, Haibo, Wang, Yaqin, Li, Kun, Li, Yuanlong, Kong, Weiqin, Zhang, Xiaojian, Yao, Mengying, Wang, Kai, Ma, Peizhi, and Zhang, Wei

Published
2021
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46. Plasticity in single-crystalline Mg3Bi2thermoelectric material

Author

Zhao, Peng, Xue, Wenhua, Zhang, Yue, Zhi, Shizhen, Ma, Xiaojing, Qiu, Jiamin, Zhang, Tianyu, Ye, Sheng, Mu, Huimin, Cheng, Jinxuan, Wang, Xiaodong, Hou, Shuaihang, Zhao, Lijia, Xie, Guoqiang, Cao, Feng, Liu, Xingjun, Mao, Jun, Fu, Yuhao, Wang, Yumei, and Zhang, Qian

Abstract

Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the abplane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the abplane, which outperforms the existing ductile thermoelectric materials3,4.

Published
2024
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