Search

Electrochromic supercapacitors (ESCs) are appealing for smart electronic device applications due to their advantages of dual-function integration. Unfortunately, the synchronous dual-function evaluation and the essential reaction mechanism are ambiguous. Herein, we constructed a 3D WO3-x nanowire networks/fluorine-doped tin oxide (WO3-x NWNs/FTO) bifunctional electrode for ESCs by a solvothermal self-crystal seeding method. The synchronous correspondence relationship between the optical and electrochemical performances of the WO3-x NWNs/FTO electrode was explored using an operando spectra-electrochemical characterization method. It reveals an excellent areal capacity of 57.57 mF cm−2 with a high corresponding optical modulation (ΔT) of 85.05% and high optical-electrochemical cycling stability. Furthermore, the synergistic reaction mechanism between the Al3+ ion intercalation behavior and the surface pseudocapacitance reaction during electrochemical cycling is revealed utilizing in situ X-ray diffraction. Based on these results, an ESC device was constructed by pairing WO3-x/FTO as the cathode with V2O5 nanoflowers/FTO (V2O5 NFs/FTO) as the anode, which simultaneously deliver high capacity and large optical modulation. Moreover, the energy storage level of the ESC device could be visually monitored by rapid and reversible color transitions in real time. This work provides a promising pathway to developing multi-functional integrated smart supercapacitors. The synchronous correspondence relationship between the optical and charge storage performances, and the synergistic intrinsic mechanism between the Al3+ ion intercalation and the surface pseudocapacitance reaction affecting the electrochromic-energy storage performance are revealed using in-situ/operando techniques. [ABSTRACT FROM AUTHOR]

β-Ni(OH)2 nanosheets with high electrochemical performance were synthesized under in situ oxidation of ammonium persulfate by a simple precipitation method. The synthetic procedure included a precipitation step using sodium hydroxides as precipitation agent and an oxidation step using ammonium persulfate as oxidant. Due to the increased overpotential and the reduced difference between anodic and cathodic potential, the as-prepared material presented a high specific capacity of 999 C g−1 at current density of 1.7 A g−1, which is nearly equal to the theoretical value of β-Ni(OH)2. It is worth noticing that the material kept a high capacity of 509 C g−1 at high current density of 33.9 A g−1. Combined with the advantage of high electrochemical stability, these results suggest that the material is a highly promising candidate for application in supercapacitor. [ABSTRACT FROM AUTHOR]

SnO 2 quantum dots are prepared at an ultra-large scale by a productive synthetic procedure without using any organic ligand. The grinding of solid mixture of SnCl 2 ⋅2H 2 O and ammonium persulphate with morpholine in a mortar at room temperature produces 1.2 nm SnO 2 quantum dots within 5 min. The formation of SnO 2 is initiated by the reaction between tin ions and hydroxyl groups generated from hydrolysis of morpholine in the released hydrate water from SnCl 2 ⋅2H 2 O. It is considered that as water is rapidly consumed by the hydrolysis reaction of morpholine, the growth process of particles is self-terminated immediately after their transitory period of nucleation and growth. As a result of simple procedure and high toleration to scaling up of preparation, at least 50 g of SnO 2 quantum dots can be produced in one batch in our laboratory. The as prepared quantum dots present high electrochemical performance due to the effective faradaic reaction and the alternative trapping of electrons and holes. [ABSTRACT FROM AUTHOR]

SnO2 quantum dots of 1.2 nm particle size are prepared at an ultra-large scale (at least 50 g) by grinding a solid mixture of SnCl2·2H2O, (NH4)2S2O8, and morpholine in a mortar at 25 °C. [ABSTRACT FROM AUTHOR]

Computing in memory (CIM) breaks the conventional von Neumann bottleneck through in situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both high precision and energy efficiency, provides a sustainable paradigm for increasingly sophisticated artificial intelligence (AI) applications but remains challenging. Here, we propose a complementary metal-oxide semiconductor-compatible ferroelectric hybrid CIM platform that consists of Boolean logic and triggers for digital processing and multistage cell arrays for analog computation. The basic ferroelectric-gated units are assembled with solution-processable two-dimensional (2D) molybdenum disulfide atomic-thin channels at a wafer-scale yield of 96.36%, delivering high on/off ratios (>10 7 ), high endurance (>10 12 ), long retention time (>10 years), and ultralow cycle-to-cycle/device-to-device variations (~0.3%/~0.5%). Last, we customize a highly compact 2D hybrid CIM system for dynamic tracking, achieving a high accuracy of 99.8% and a 263-fold improvement in power efficiency compared to graphics processing units. These results demonstrate the potential of 2D fully ferroelectric-gated hybrid hardware for developing versatile CIM blocks for AI tasks.