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3. Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium.

Author

Li, Zongbao, An, Xiaoyan, Wang, Xia, Lu, Wenbo, Wen, Xin, Zhang, Xing, and Xue, Ding-Jiang

Subjects
POINT defects, VALENCE bands, SELENIUM, SEMICONDUCTORS
Abstract

Defect tolerance is crucial in photovoltaic absorbers. Here we report that trigonal selenium (t-Se) exhibits a perovskite-like antibonding valence band maximum arising from Se p–p coupling. This results in the shallow nature of dominant Se vacancy defects. We further reveal the unique defect self-healing characteristic of Se intrinsic point defects. [ABSTRACT FROM AUTHOR]

Published
2024
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10. Managing grains and interfaces via ligand anchoring enables 22.3%-efficiency inverted perovskite solar cells

Author

Zheng, Xiaopeng, Hou, Yi, Bao, Chunxiong, Yin, Jun, Yuan, Fanglong, Huang, Ziru, Song, Kepeng, Liu, Jiakai, Troughton, Joel, Gasparini, Nicola, Zhou, Chun, Lin, Yuanbao, Xue, Ding-Jiang, Chen, Bin, Johnston, Andrew K., Wei, Nini, Hedhili, Mohamed Nejib, Wei, Mingyang, Alsalloum, Abdullah Y., Maity, Partha, Turedi, Bekir, Yang, Chen, Baran, Derya, Anthopoulos, Thomas D., Han, Yu, Lu, Zheng-Hong, Mohammed, Omar F., Gao, Feng, Sargent, Edward H., and Bakr, Osman M.

Published
2020
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12. Template Selection Strategy for Synthesis of One-Dimensional CrSbSe3Ferromagnetic Semiconductor Nanoribbons

Author

Yang, Huan, Zhang, Huisheng, Guo, Lihong, Yang, Wenjia, Wu, Yue, Wang, Juanjuan, Li, Xiaolong, Du, Haifeng, Peng, Bo, Liu, Qingxiang, Wang, Fang, Xue, Ding-Jiang, and Xu, Xiaohong

Abstract

CrSbSe3─the only experimentally validated one-dimensional (1D) ferromagnetic semiconductor─has recently attracted significant attention. However, all reported synthesis methods for CrSbSe3nanocrystals are based on top-down methods. Here we report a template selection strategy for the bottom-up synthesis of CrSbSe3nanoribbons. This strategy relies on comparing the formation energies of potential binary templates to the ternary target product. It enables us to select Sb2Se3with the highest formation energy, along with its 1D crystal structure, as the template instead of Cr2Se3with the lowest formation energy, thereby facilitating the transformation from Sb2Se3to CrSbSe3by replacing half of the Sb atoms in Sb2Se3with Cr atoms. The as-prepared CrSbSe3nanoribbons exhibit a length of approximately 5 μm, a width ranging from 80 to 120 nm, and a thickness of about 5 nm. The single CrSbSe3nanoribbon presents typical semiconductor behavior and ferromagnetism, confirming the intrinsic ferromagnetism in the 1D CrSbSe3semiconductor.

Published
2024
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16. TexSe1– xPhotodiode Shortwave Infrared Detection and Imaging

Author

Fu, Liuchong, primary, He, Yuming, additional, Zheng, Jiajia, additional, Hu, Yuxuan, additional, Xue, Jiayou, additional, Li, Sen, additional, Ge, Ciyu, additional, Yang, Xuke, additional, Peng, Meng, additional, Li, Kanghua, additional, Zeng, Xiangbin, additional, Wei, Jinchao, additional, Xue, Ding‐jiang, additional, Song, Haisheng, additional, Chen, Chao, additional, and Tang, Jiang, additional

Published
2023
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18. Low-cost and high-performance selenium indoor photovoltaics.

Author

Wei, Zhouqing, Lu, Wenbo, Li, Zongbao, Feng, Mingjie, Yan, Bin, Hu, Jin-Song, and Xue, Ding-Jiang

Abstract

Selenium (Se), as the world's oldest photovoltaic material, has reemerged as a promising absorber material for indoor photovoltaics (IPVs) due to its suitable wide bandgap of ∼1.9 eV, nontoxicity, and excellent inherent stability. However, despite the low material cost of Se, conventional high-performance Se photovoltaic devices usually employ high-cost Au as the electrode, significantly increasing the cost of Se-based devices and restricting their future commercialization. Here we replace high-cost Au with low-cost Cu as the electrode, reducing the cost of Se devices by about one order of magnitude. We further introduce an isolation layer of MoOx between Se and Cu films; this prevents the reaction between Se and Cu to form CuSe during the thermal evaporation of Cu, which significantly lowers the device performance. The resulting Se cells achieve an efficiency of 10.4% under indoor illumination at 500 lux, comparable to that of Au electrode-based Se devices and superior to that of the current IPV industry standard of commercialized amorphous silicon cells with indoor photovoltaic efficiency below 10%. Unencapsulated devices also exhibit negligible efficiency loss after 1000 h of storage under ambient conditions. [ABSTRACT FROM AUTHOR]

Published
2023
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19. Ultrasonication‐Assisted Seed Screening Enables Oriented and Efficient Low‐Dimensional Crystal‐Structural Thin‐Film Photovoltaics.

Author

Yan, Bin, Feng, Mingjie, Wang, Cong, Li, Zongbao, Lu, Wenbo, Liu, Shunchang, Hu, Jin‐Song, and Xue, Ding‐Jiang

Subjects
PHOTOVOLTAIC power generation, SEEDS, CHARGE carrier mobility, COVALENT bonds, MASS production, CARRIER density, SOLAR cells
Abstract

Ultrasonication‐assisted liquid exfoliation of layered materials is widely used to produce a large number of 2D nanosheets due to its simplicity, universality, and mass production. Here, the utility of ultrasonication is extended from liquid exfoliation to seed screening in the case of layered GeSe and GeS. It is found that the ultrasonic stripping force can also be used to selectively remove the lying seeds interacting with substrate through weak van der Waals (vdW) forces while retaining the standing seeds connected with substrate via tightly covalent bonds. The standing seeds then induce the growth of 2D crystal‐structural films with standing orientation. This thereby enables efficient carrier transport within covalently bonded layers, instead of poor transport between layers held together by vdW forces. The resulting standing‐oriented GeSe films exhibit a 21‐times increase in carrier mobility compared to lying‐oriented films. As a result, this study demonstrates the highest power conversion efficiencies of 6.1% and 10.5% under AM1.5G 1‐ and 0.01‐sun illumination reported for GeSe solar cells, respectively. [ABSTRACT FROM AUTHOR]

Published
2023
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21. Mitigating Electron Leakage of Solid Electrolyte Interface for Stable Sodium‐Ion Batteries

Author

Wang, Enhui, primary, Wan, Jing, additional, Guo, Yu‐Jie, additional, Zhang, Qianyu, additional, He, Wei‐Huan, additional, Zhang, Chao‐Hui, additional, Chen, Wan‐Ping, additional, Yan, Hui‐Juan, additional, Xue, Ding‐Jiang, additional, Fang, Tiantian, additional, Wang, Fuyi, additional, Wen, Rui, additional, Xin, Sen, additional, Yin, Ya‐Xia, additional, and Guo, Yu‐Guo, additional

Published
2022
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25. Strain-engineering the anisotropic electrical properties of low-symmetry bilayer GeSe.

Author

Li, Zongbao, Wang, Xia, Liu, Shun-Chang, Shi, Wei, Xing, Xiaobo, Xue, Ding-Jiang, and Hu, Jin-Song

Subjects
STRAINS & stresses (Mechanics), PHOSPHORUS, GERMANIUM selenide, CRYSTAL structure, CRYSTALLOGRAPHY, OPTOELECTRONICS, BILAYERS (Solid state physics), ANISOTROPY
Abstract

As an isostructural analog of black phosphorus, GeSe has attracted considerable attention recently due to its intriguing in-plane anisotropic optical, vibrational, and electrical properties stemming from the low-symmetry two-dimensional crystal structure. However, there has been no report about the anisotropy tuning of GeSe, hampering its further applications in optoelectronics and electronics. Here, we systematically investigate the change of electronic properties of the bilayer GeSe with different stacked crystal structures under strain through first-principles calculation. Notably, the anisotropy of electron effective mass can be controlled and even rotated by 90° in a slipping process of one crystallographic period along the armchair direction. These plentiful strain-engineering properties of the bilayer GeSe would render it useful for the exploration of novel GeSe-based optoelectronic and electronics applications. [ABSTRACT FROM AUTHOR]

Published
2019
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30. Mitigating Electron Leakage of Solid Electrolyte Interface for Stable Sodium‐Ion Batteries.

Author

Wang, Enhui, Wan, Jing, Guo, Yu‐Jie, Zhang, Qianyu, He, Wei‐Huan, Zhang, Chao‐Hui, Chen, Wan‐Ping, Yan, Hui‐Juan, Xue, Ding‐Jiang, Fang, Tiantian, Wang, Fuyi, Wen, Rui, Xin, Sen, Yin, Ya‐Xia, and Guo, Yu‐Guo

Subjects
SOLID electrolytes, ELECTRON work function, LEAKAGE, ELECTRONS, INTERFACE stability, IONIC conductivity, SODIUM ions
Abstract

The interfacial stability is highly responsible for the longevity and safety of sodium ion batteries (SIBs). However, the continuous solid‐electrolyte interphase(SEI) growth would deteriorate its stability. Essentially, the SEI growth is associated with the electron leakage behavior, yet few efforts have tried to suppress the SEI growth, from the perspective of mitigating electron leakage. Herein, we built two kinds of SEI layers with distinct growth behaviors, via the additive strategy. The SEI physicochemical features (morphology and componential information) and SEI electronic properties (LUMO level, band gap, electron work function) were investigated elaborately. Experimental and calculational analyses showed that, the SEI layer with suppressed growth delivers both the low electron driving force and the high electron insulation ability. Thus, the electron leakage is mitigated, which restrains the continuous SEI growth, and favors the interface stability with enhanced electrochemical performance. [ABSTRACT FROM AUTHOR]

Published
2023
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45. Efficient tandem solar cells with solution-processed perovskite on textured crystalline silicon

Author

Hou, Yi, primary, Aydin, Erkan, additional, De Bastiani, Michele, additional, Xiao, Chuanxiao, additional, Isikgor, Furkan H., additional, Xue, Ding-Jiang, additional, Chen, Bin, additional, Chen, Hao, additional, Bahrami, Behzad, additional, Chowdhury, Ashraful H., additional, Johnston, Andrew, additional, Baek, Se-Woong, additional, Huang, Ziru, additional, Wei, Mingyang, additional, Dong, Yitong, additional, Troughton, Joel, additional, Jalmood, Rawan, additional, Mirabelli, Alessandro J., additional, Allen, Thomas G., additional, Van Kerschaver, Emmanuel, additional, Saidaminov, Makhsud I., additional, Baran, Derya, additional, Qiao, Qiquan, additional, Zhu, Kai, additional, De Wolf, Stefaan, additional, and Sargent, Edward H., additional

Published
2020
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48. GeSe thin-film solar cells

Author

Liu, Shun-Chang, primary, Yang, Yusi, additional, Li, Zongbao, additional, Xue, Ding-Jiang, additional, and Hu, Jin-Song, additional

Published
2020
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49. Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment.

Author

Yan, Hui-Juan, Li, Zongbao, Liu, Shun-Chang, Wang, Xia, Zhang, Xing, Xue, Ding-Jiang, and Hu, Jin-Song

Abstract

Interlayer coupling as a unique feature for two-dimensional (2D) materials may influence their thickness-dependent physical properties, especially the bandgap due to quantum confinement effect. Widely-studied 2D materials usually possess strong interlayer coupling such as most of transition metal dichalcogenides (TMDs), PtS2 and so on. However, 2D materials with weak interlayer coupling are rarely referred that mainly focus on ReS2, as well as its counterpart ReSe2. Here we report a new member of weak interlayer coupling 2D materials, germanium disulfide (GeS2). The interlayer interaction in GeS2 is investigated from theory to experiment. By density functional theory calculations, we find that this extraordinarily weak interlayer coupling in GeS2 originates from the weak hybridization of interlayer S atoms. Thickness-dependent Raman spectra of GeS2 flakes exhibit that the Raman peaks remain unchanged when increasing the thickness; and a small first-order temperature coefficient of −0.00857 cm−1·K−1 is obtained from the temperature-dependent Raman spectra. These experimental results further confirm the weak interlayer coupling in GeS2. [ABSTRACT FROM AUTHOR]

Published
2022
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