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We propose the implementation of a rapid adiabatic passage (RAP) scheme to generate entanglement in Rydberg atom-array systems. This method transforms a product state in a multi-qubit system into an entangled state with high fidelity and robustness. By employing global and continuous driving laser fields, we demonstrate the generation of two-qubit Bell state and three-qubit W state, via sequential RAP pulses within the Rydberg blockade regime. As an illustrative example, applying this technique to alkali atoms, we predict fidelities exceeding 0.9995 for two-qubit Bell and three-qubit W state, along with excellent robustness. Furthermore, our scheme can be extended to generate entanglement between weakly coupled atoms and to create four-qubit Greenberger- Horne-Zeilinger states through spatial correlations. Our approach holds the potential for extension to larger atomic arrays, offering a straightforward and efficient method to generate high-fidelity entangled states in neutral atom systems., Comment: 9 pages, 5 figures

High-fidelity and robust quantum gates are essential for quantum information processing, where neutral Rydberg atoms trapped in optical tweezer arrays serving as a versatile platform for the implementation. We propose a rapid adiabatic passage (RAP) scheme for achieving a high-fidelity controlled-Z (CZ) gate on a neutral atom Rydberg platform. Utilizing only global laser dressing, our scheme involves echoing two identical RAP pulses within the Rydberg blockade regime to realize a CZ gate and can be readily extended to a C$^k$Z gate with additional qubits. We predict a CZ gate with fidelity over 0.9995 using akali-atom parameters, and a CCZ gate with fidelity exceeding 0.999. Moreover, the direct utilization of echoing RAP pulses enables the implementation of a four-bit CCCZ gate at fidelity over 0.996 without further optimization. The proposed scheme, remarkably robust to variations in driving fields and realistic decoherence effects, holds promise for future quantum information processing applications., Comment: (5+3) pages, 3 figures

Federated learning is a promising distributed training paradigm that effectively safeguards data privacy. However, it may involve significant communication costs, which hinders training efficiency. In this paper, we aim to enhance communication efficiency from a new perspective. Specifically, we request the distributed clients to find optimal model updates relative to global model parameters within predefined random noise. For this purpose, we propose Federated Masked Random Noise (FedMRN), a novel framework that enables clients to learn a 1-bit mask for each model parameter and apply masked random noise (i.e., the Hadamard product of random noise and masks) to represent model updates. To make FedMRN feasible, we propose an advanced mask training strategy, called progressive stochastic masking (PSM). After local training, each client only need to transmit local masks and a random seed to the server. Additionally, we provide theoretical guarantees for the convergence of FedMRN under both strongly convex and non-convex assumptions. Extensive experiments are conducted on four popular datasets. The results show that FedMRN exhibits superior convergence speed and test accuracy compared to relevant baselines, while attaining a similar level of accuracy as FedAvg., Comment: Accepted by MM 2024

Federated learning is a promising distributed machine learning paradigm that can effectively exploit large-scale data without exposing users' privacy. However, it may incur significant communication overhead, thereby potentially impairing the training efficiency. To address this challenge, numerous studies suggest binarizing the model updates. Nonetheless, traditional methods usually binarize model updates in a post-training manner, resulting in significant approximation errors and consequent degradation in model accuracy. To this end, we propose Federated Binarization-Aware Training (FedBAT), a novel framework that directly learns binary model updates during the local training process, thus inherently reducing the approximation errors. FedBAT incorporates an innovative binarization operator, along with meticulously designed derivatives to facilitate efficient learning. In addition, we establish theoretical guarantees regarding the convergence of FedBAT. Extensive experiments are conducted on four popular datasets. The results show that FedBAT significantly accelerates the convergence and exceeds the accuracy of baselines by up to 9\%, even surpassing that of FedAvg in some cases., Comment: Accepted by ICML 2024

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2., Comment: Modification required

Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in all-epitaxial RuO2/MgO/RuO2 three-terminal tunnel junctions (TJ) using spin-flop tunnel anisotropy magnetoresistance (TAMR). We measured a TAMR ratio of around 60% at room temperature, which arises between the parallel and perpendicular configurations of the adjacent collinear AFM state. Furthermore, we carried out angular dependent measurements using this AFM-TJ and showed that the magnitude of anisotropic longitudinal magnetoresistance in the AFM-TJ can be controlled by the direction of magnetic field. We also theoretically found that the colinear antiferromagnetic MTJ may produce a substantially large TAMR ratio as a result of the time-reversal, strong spin orbit coupling (SOC) characteristic of antiferromagnetic RuO2. Our work not only propels antiferromagnetic materials to the forefront of spintronic device innovation but also unveils a novel paradigm for electrically governed antiferromagnetic spintronics, auguring transformative advancements in high-speed, low-energy information devices.

We find explicit and optimal upper bounds for the expected occupation density for an It\^o-process when its drift and diffusion coefficients are unknown under boundedness and ellipticity conditions on the coefficients. This is related to the optimal bound for the expected interval occupation found in Ankirchner and Wendt(2021). In contrast, our bound is for a single point and the resulting formula is less involved. Our findings allow us to find explicit upper bounds for mean path integrals., Comment: 20 pages

We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge current signal increases nearly an order of magnitude in both longitudinal spin Seebeck effect (SSE) and spin pumping (SP) measurements. Through thickness dependence studies of the Ru metal layer and theoretical model, we quantitatively clarify different contributions of the increased SSE signal that mainly comes from the inverse orbital Hall effect (IOHE) of Ru, and partially comes from the orbital sink effect in the Ru layer. A similar enhancement of SSE(SP) signals is also observed when Ru is replaced by other materials (Ta, W, and Cu), implying the universality of the IOHE in transition metals. Our findings not only suggest a more efficient generation of the charge current via the orbital angular moment channel but also provides crucial insights into the interplay among charge, spin, and orbit.

This paper is concerned with finite dimensional models for the entire term structure for energy futures. As soon as a finite dimensional set of possible yield curves is chosen, one likes to estimate the dynamic behaviour of the yield curve evolution from data. The estimated model should be free of arbitrage which is known to result in some drift condition. If the yield curve evolution is modelled by a diffusion, then this leaves the diffusion coefficient open for estimation. From a practical perspective, this requires that the chosen set of possible yield curves is compatible with any obtained diffusion coefficient. In this paper, we show that this compatibility enforces an affine geometry of the set of possible yield curves., Comment: 17 pages

We find explicit upper bounds for the density of marginals of continuous diffusions where we assume that the diffusion coefficient is constant and the drift is solely assumed to be progressively measurable and locally bounded. In one dimension we extend our result to the case that the diffusion coefficient is a locally Lipschitz-continuous function of the state. Our approach is based on a comparison to a suitable doubly reflected Brownian motion whose density is known in a series representation., Comment: 13 pages