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Experiments show that the Cooper pair transport in the insulator phase that forms at thin film superconductor to insulator transitions (SIT) is simply activated. This activated behavior depends on the microscopic factors that drive the localization of the Cooper pairs. To test proposed models, we investigated how a perturbation that weakens Cooper pair binding, magnetic impurity doping, affects the characteristic activation energy, $T_0$. The data show that $T_0$ decreases monotonically with doping in films tuned farther from the SIT and increases and peaks in films that are closer to the SIT critical point. These observations provide strong evidence that the bosonic SIT in thin films is a Mott transition driven by Coulomb interactions that are screened by virtual quasi-particle excitations. This dependence on underlying fermionic degrees of freedom distinguishes these SITs from those in micro-fabricated Josephson Junction Arrays, cold atom systems, and likely in high temperature superconductors with nodes in their quasiparticle density of states., Comment: 5 pages, 3 figures

Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly on particle phases can also drive localization. We present evidence of a superfluid bose glass to insulator transition at a critical level of this gauge field disorder in a nano-patterned array of amorphous Bi islands. This transition shows signs of metallic transport near the critical point characterized by a resistance of order 0.5 h/4e^2 , indicative of a quantum phase transition. The critical disorder also depends on interisland coupling in agreement with recent Quantum Monte Carlo simulations. Finally, these experiments are uniquely connected to theory because they employ a method for controlling a disorder parameter that coincides directly with a term that appears in model Hamiltonians. This correspondence will enable further high fidelity comparisons between theoretical and experimental studies of disorder effects on quantum critical systems., Comment: 6 pages, 3 figures

We isolated flux disorder effects on the transport at the critical point of the quantum magnetic field tuned Superconductor to Insulator transition (BSIT). The experiments employed films patterned into geometrically disordered hexagonal arrays. Spatial variations in the flux per unit cell, which grow in a perpendicular magnetic field, constitute flux disorder. The growth of flux disorder with magnetic field limited the number of BSITs exhibited by a single film due to flux matching effects. The critical metallic resistance at successive BSITs grew with flux disorder contrary to predictions of its universality. These results open the door for controlled studies of disorder effects on the universality class of an ubiquitous quantum phase transition.

A Cooper pair insulator (CPI) phase emerges near the superconductor-insulator transitions of a number of strongly-disordered thin film systems. Much recent study has focused on a mechanism driving the underlying Cooper pair localization. We present data showing that a CPI phase develops in amorphous Pb$_{0.9}$Bi$_{0.1}$ films deposited onto nano-porous anodized aluminum oxide surfaces just as it has been shown to develop for a-Bi films. This result confirms the assertion that the CPI phase emerges due to the structure of the substrate. It supports the picture that nanoscale film thickness variations induced by the substrate drive the localization. Moreover, it implies that the CPI phase can be induced in any superconducting material that can be deposited onto this surface.

We present investigations of the superconductor to insulator transition (SIT) of uniform a-Bi films using a technique sensitive to Cooper pair phase coherence. The films are perforated with a nanohoneycomb array of holes to form a multiply connected geometry and subjected to a perpendicular magnetic field. Film magnetoresistances on the superconducting side of the SIT oscillate with a period dictated by the superconducting flux quantum and the areal hole density. The oscillations disappear close to the SIT critical point to leave a monotonically rising magnetoresistance that persists in the insulating phase. These observations indicate that the Cooper pair phase coherence length, which is infinite in the superconducting phase, collapses to a value less than the interhole spacing at this SIT. This behavior is inconsistent with the gradual reduction of the phase coherence length expected for a bosonic, phase fluctuation driven SIT. This result starkly contrasts with previous observations of oscillations persisting in the insulating phase of other films implying that there must be at least two distinct classes of disorder tuned SITs.

Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed to the formation of inhomogeneous phases. Difficulty correlating the behaviors with observations of the inhomogeneities make these connections uncertain. Of primary interest here are proposals that insulating films near the IST, which show an activated resistance and giant positive magnetoresistance, contain islands of Cooper Pairs (CPs). Here we present evidence that these types of inhomogeneities are essential to such an insulating phase in amorphous Bi (a-Bi) films deposited on substrates patterned with nanometer-sized holes. The patterning induces film thickness variations, and corresponding coupling constant variations, that transform the composition of the insulator from localized electrons to CPs. Analyses near the thickness-tuned ISTs of films on nine different substrates show that weak links between SC islands dominate the transport. In particular, the ISTs all occur when the link resistance approaches the resistance quantum for pairs. These observations lead to a detailed picture of CPs localized by spatial variations of the superconducting coupling constant., Comment: 4 pages, 3 figures, 1 supplemental page with 1 supplemental figure

Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes, can exhibit an insulating phase with transport dominated by the incoherent motion of Cooper pairs of electrons between localized states. Here we show that the magnetoresistance of this Cooper pair insulator phase is positive and grows exponentially with decreasing temperature, for temperatures well below the pair formation temperature. It peaks at a field estimated to be sufficient to break the pairs and then decreases monotonically into a regime in which the film resistance assumes the temperature dependence appropriate for weakly localized single electron transport. We discuss how these results support proposals that the large MR peaks in other unpatterned, ultrathin film systems disclose a Cooper Pair Insulator phase and provide new insight into the Cooper pair localization.

We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven transitions in unpatterned Bi films, other materials, and Josephson junction arrays. Our results suggest a structural source for similar behavior found in some materials and that despite the clear bosonic nature of the SITs, quasiparticle degrees of freedom likely also play an important part in the evolution of the SIT., Comment: 4 pages, 4 figures

We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as exp[-(T_{0}/T)^{1/2}] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T_{0}. The field dependence of low-temperature conductance behaves an exp[-(xi_{0}/xi)^{1/2}] with high electric field xi at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at low T = 1.7 K. Comparison with theory indicates that our data are best explained by Coulomb-gap variable range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant., Comment: 10 pages, 5 figures

We present SEM images of films thermally evaporated onto Anodic Aluminum Oxide substrates that are patterned with a hexagonal array of 34 and 80 nm diameter holes spaced by 100 nm. Over a range of film thicknesses, Pb and Sn films spontaneously self assemble into an array of nano-crystals in registry with the underlying hole lattice. The development of the arrays with thickness indicates that surface energies drive coalescing grains to move over the holes. Materials that wet the substrate or whose grains do not coalesce at these substrate temperatures do not form arrays. We discuss some potential applications.

We have patterned a hexagonal array of nano-scale holes into a series of ultrathin, superconducting Bi/Sb films with transition temperatures 2.65 K $

Nb films containing extended arrays of holes with 45-nm diameter and 100-nm spacing have been fabricated using anodized aluminum oxide (AAO) as substrate. Pronounced matching effects in the magnetization and Little-Parks oscillations of the superconducting critical temperature have been observed in fields up to 9 kOe. Flux pinning in the patterned samples is enhanced by two orders of magnitude as compared to unpatterned reference samples in applied fields exceeding 5 kOe. Matching effects are a dominant contribution to vortex pinning at temperatures as low as 4.2 K due to the extremely small spacing of the holes.