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192 results on '"Xu, HengYu"'

1. Charged superradiant instability in a spherical regular black hole

Author

Zhan, Yizhi, Xu, Hengyu, and Zhang, Shao-Jun

Subjects
General Relativity and Quantum Cosmology, High Energy Physics - Theory
Abstract

We examine the stability of a spherically symmetric regular black hole when subjected to perturbations from a charged scalar field. This particular black hole is constructed by deforming the Minkowski spacetime. It has been observed that the charged superradiant instability arises only within a specific range of the deformation parameter, potentially resulting in an instability growth rate with a maximum magnitude of approximately $\text{Im} (M \omega) \sim 10^{-3}$. This growth rate significantly exceeds the instability identified in ABG black holes discussed in prior research, suggesting a notable timescale for detecting this phenomenon in astrophysical scenarios. Additionally, we conduct a thorough investigation into how the three parameters of the model influence the onset and intensity of the instability. Our analysis offers further insights into the possible emergence of this instability in spherically regular black holes and its association with the nonlinear effects of the electromagnetic field., Comment: 19 pages,7 figures,more refs,to appear in EPJC

Published
2024
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2. Tachyonic instability and spontaneous scalarization in parameterized Schwarzschild-like black holes

Author

Xu, Hengyu, Zhan, Yizhi, and Zhang, Shao-Jun

Subjects
General Relativity and Quantum Cosmology
Abstract

We study the phenomenon of spontaneous scalarization in parameterized Schwarzschild-like black holes. Two metrics are considered, the Konoplya-Zhidenko metric and the Johannsen-Psaltis metric. While these metrics can mimic the Schwarzschild black hole well in the weak-field regime, they have deformed geometries in the near-horizon strong-field region. Such deformations notably influence the emergence of tachyonic instability and subsequent spontaneous scalarization, enabling a clear distinction between these parameterized metrics and the standard Schwarzschild metric. These results suggest a possible way to test the parameterized black holes and thus the Kerr hypothesis by observing the phenomenon of spontaneous scalarization., Comment: 19 pages,10 figures,published version

Published
2024
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3. Tachyonic Instability of Reissner-Nordstr\'{o}m-Melvin Black Holes in Einstein-Maxwell-Scalar Theory

Author

Xu, Hengyu and Zhang, Shao-Jun

Subjects
General Relativity and Quantum Cosmology
Abstract

In the framework of Einstein-Maxwell-scalar theory, we studied scalar field perturbations of Reissner-Nordstr\"{o}m-Melvin (RNM) black holes, which describes the RN black holes immersed in a uniform magnetic field. Due to the coupling to the Maxwell term, the scalar field acquires an effective mass whose square, in the presence of the magnetic field, will become negative somewhere outside the horizon for either sign of the coupling constant $\alpha$, thus triggering the tachyonic instability and leading to spontaneous scalarization when $\alpha$ is large enough. The magnetic field has significant influences on the waveforms and the onset of the instability, which differs for different sign of $\alpha$. Effects of the black hole charge on the instability are also studied., Comment: 16 pages, 15 figures. arXiv admin note: text overlap with arXiv:2209.02268

Published
2023
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32. A strategy to drive nanoflow using Laplace pressure and the end effect.

Author

Zhang, Keli, Xu, Hengyu, Fan, Jingcun, Ouyang, Cancan, Wu, Hengan, and Wang, Fengchao

Subjects
INTERFACE dynamics, MOLECULAR dynamics, FLUID dynamics, STEADY-state flow, NANOFLUIDICS, CARBON nanotubes
Abstract

Nanofluidics holds significant potential across diverse fields, including energy, environment, and biotechnology. Nevertheless, the fundamental driving mechanisms on the nanoscale remain elusive, underscoring the crucial importance of exploring nanoscale driving techniques. This study introduces a Laplace pressure‐driven flow method that is accurately controlled and does not interfere with interfacial dynamics. Here, we first confirmed the applicability of the Young–Laplace equation for droplet radii ranging from 1 to 10 nm. Following that, a steady‐state liquid flow within the carbon nanotube was attained in molecular dynamics simulations. This flow was driven by the Laplace pressure difference across the nanochannel, which originated from two liquid droplets of unequal sizes positioned at the channel ends, respectively. Furthermore, we employ the Sampson formula to rectify the end effect, ultimately deriving a theoretical model to quantify the flow rate, which satisfactorily describes the molecular dynamics simulation results. This research enhances our understanding on the driving mechanisms of nanoflows, providing valuable insights for further exploration in fluid dynamics on the nanoscale. [ABSTRACT FROM AUTHOR]

Published
2024
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44. Computational Design of Epitope-Scaffolds Allows Induction of Antibodies Specific for a Poorly Immunogenic HIV Vaccine Epitope

Author

Correia, Bruno E., Ban, Yih-En Andrew, Holmes, Margaret A., Xu, Hengyu, Ellingson, Katharine, Kraft, Zane, Carrico, Chris, Boni, Erica, Sather, D. Noah, Zenobia, Camille, Burke, Katherine Y., Bradley-Hewitt, Tyler, Bruhn-Johannsen, Jessica F., Kalyuzhniy, Oleksandr, Baker, David, Strong, Roland K., Stamatatos, Leonidas, and Schief, William R.

Published
2010
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47. Effect of pulsed UV laser irradiation on 4H-SiC MOS with thermal gate oxide

Author

Zhi Jin, Fazhan Zhao, Xu Hengyu, Luo Zhipeng, and Wan Caiping

Subjects
010302 applied physics, Materials science, business.industry, Photon irradiation, Oxide, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Sic substrate, Gate oxide, 0103 physical sciences, Thermal, Uv laser, Optoelectronics, Irradiation, Electrical and Electronic Engineering, business, Layer (electronics)
Abstract

The impact of 193 nm ArF pulsed UV laser irradiation on thermally grown SiO2/4H-SiC structures was investigated. The effect of pulsed UV light on the near-interface oxide trap of SiO2/SiC structure is greater than that on the interface and the near-interface SiC substrate. The defects near the interface do not change monotonously with the increase in irradiation power, which indicates that UV irradiation has at least two effects on SiO2/SiC. When the irradiation power is too high, new defects will be introduced into the oxide layer. This article reveals a potential mechanism for high-energy photon irradiation to change device performance in semiconductor plasma technology.

Published
2020
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49. Abstract 1858: SBT6290, a systemically administered Nectin4-directed TLR8 ImmunoTAC™ product candidate, is designed for tumor-localized activation of myeloid cells

Author

Comeau, Michael R., primary, Metz, Heather, additional, Stevens, Brenda, additional, Winship, Damion, additional, Brevik, Jamie, additional, Rhodehamel, Marcus, additional, Childs, Monica, additional, Hay, Elsa, additional, Chang, Jenny, additional, Fan, Li-Qun, additional, Xu, Hengyu, additional, Grey, Jonathan, additional, Adamo, Jeffrey, additional, Setter, Ben, additional, Carillo, Ray, additional, Smith, Sean W., additional, Tan, Phil, additional, Dubose, Robert, additional, Latchman, Yvette, additional, Baum, Peter, additional, and Odegard, Valerie, additional

Published
2021
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