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This study examined the public opinions of esports at the 2023 Asian Games and value co-creation during the event using an LLM-enhanced BERTopic modeling analysis. We identified five major themes representing public perceptions, as well as how major stakeholders co-created value within and beyond the esports ecosystem. Key findings highlighted the strategic use of social media marketing to influence public opinion and promote esports events and brands, emphasizing the importance of event logistics and infrastructure. Additionally, the study revealed the co-creation value contributed by stakeholders outside the traditional esports ecosystem, particularly in promoting national representation and performance. Our findings supported the ongoing efforts to legitimize esports as a sport, noting that mainstream recognition remains a challenge. The inclusion of esports as a medal event showcased broader acceptance and helped mitigate negative public perceptions. Moreover, contributions from non-traditional stakeholders underscored the value of cross-subcultural collaborations in esports.

Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an important capability to create practical deployment opportunities. Molybdenum disulfide (MoS$_2$), a two-dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS$_2$, while maintaining the structural integrity of the crystals remains a notable challenge. Here, we present a one-step, in-situ defect engineering approach for monolayer MoS$_2$ using a pressure dependent chemical vapour deposition (CVD) process. Monolayer MoS$_2$ grown in low-pressure CVD conditions (LP-MoS$_2$) produces sulfur vacancy (Vs) induced defect rich crystals primarily attributed to the kinetics of the growth conditions. Conversely, atmospheric pressure CVD grown MoS$_2$ (AP-MoS$_2$) passivates these Vs defects with oxygen. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP-MoS$_2$ shows a drastically enhanced photoluminescence, which is significantly quenched in LP-MoS$_2$ attributed to in-gap electron donor states induced by the Vs defects. However, the n-doping induced by the Vs defects in LP-MoS$_2$ generates enhanced photoresponsivity and detectivity in our fabricated photodetectors compared to the AP-MoS$_2$ based devices. Defect-rich LP-MoS$_2$ outperforms AP-MoS$_2$ as channel layers of field-effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single-step CVD approach for in-situ defect engineering in monolayer MoS$_2$ and presents a pathway to control defects in other monolayer material systems., Comment: 29 pages, 5 figures

In this paper, we develop a Monte Carlo method for solving PDEs involving an integral fractional Laplacian (IFL) in multiple dimensions. We first construct a new Feynman-Kac representation based on the Green function for the fractional Laplacian operator on the unit ball in arbitrary dimensions. Inspired by the "walk-on-spheres" algorithm proposed in [24], we extend our algorithm for solving fractional PDEs in the complex domain. Then, we can compute the expectation of a multi-dimensional random variable with a known density function to obtain the numerical solution efficiently. The proposed algorithm finds it remarkably efficient in solving fractional PDEs: it only needs to evaluate the integrals of expectation form over a series of inside ball tangent boundaries with the known Green function. Moreover, we carry out the error estimates of the proposed method for the $n$-dimensional unit ball. Finally, ample numerical results are presented to demonstrate the robustness and effectiveness of this approach for fractional PDEs in unit disk and complex domains, and even in ten-dimensional unit balls., Comment: 33 figures