48 results on '"Xiu, X. Q."'
Search Results
2. Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
3. Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
4. Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
5. Synthesis and Properties of GaxMn1-xN films
6. Dielectric properties of AlN film on Si substrate
7. Origin and Role of Kaolinization in Roll-Front Uranium Deposits and Its Response to Ore-Forming Fluids in the Yili Basin, China
8. Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1-xN films with different Al concentrations.
9. Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction.
10. Analysis of magnetic structures of iron nitrides by Landau's theory of second-order phase transitions
11. Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
12. Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar
13. An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact
14. Composition of SiC layer grown on Si(111) substrate analyzed by plan-view energy dispersive spectroscopy
15. Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate
16. Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates
17. Investigation of structural and optical anisotropy ofm-plane InN films grown on γ-LiAlO2(1 0 0) by metal organic chemical vapour deposition
18. Gate voltage and structure parameter modulated spin splitting in AlGaN/GaN quantum wells
19. Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1−xN films with different Al concentrations
20. Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO 2 (001) substrates
21. Impact of effective shear strain on the equilibrium phases and polarization states of PbTiO3 thin film
22. Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate
23. In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain
24. The contributions of the acoustic modes and optical modes to the primary pyroelectric coefficient of GaN
25. Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films
26. Effect of Doping Concentration and Barrier Thickness on Rashba Spin Splitting in Al0.5Ga0.5N/GaN Heterostructures
27. A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN
28. Erratum: “Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction” [J. Appl. Phys. 103, 023504, (2008)]
29. Erratum: “Impact of lattice strain on the phase formation, polarization and dielectric constant of PbZr1−xTixO3 films” [Appl. Phys. Lett. 92, 064103 (2008)]
30. Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)
31. Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition
32. CVD growth of Ge films on graded Si 1-x Ge x : C buffers
33. Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1−xTixO3 films
34. Nonpolar m-plane thin film GaN and InGaN∕GaN light-emitting diodes on LiAlO2(100) substrates
35. Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN
36. Phenomenological model for the spontaneous polarization of GaN
37. Effects of surface treatments on hexagonal InN films grown on sapphire substrates
38. Comment on “Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition” [Appl. Phys. Lett. 86, 142104 (2005)]
39. Study of Dry Oxidation of Aluminum Nitride on Si(111) Substrate Grown by Metalorganic Chemical Vapor Deposition
40. CVD growth of Ge films on graded Si1-xGex: C buffers.
41. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy
42. Synthesis and Properties of GaxMn1-xN films.
43. Impact of effective shear strain on the equilibrium phases and polarization states of PbTiO3 thin film.
44. Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate.
45. Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100).
46. Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1-xTixO3 films.
47. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates.
48. Erratum: “Impact of lattice strain on the phase formation, polarization and dielectric constant of PbZr1-xTixO3 films” [Appl. Phys. Lett. 92, 064103 (2008)].
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.