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Metal halide perovskite ferroelectrics possess various physical characteristics such as piezoelectric and pyroelectric effects, which could broaden the application of perovskite ferroelectrics and enhance the optoelectronic performance. Therefore, it is promising to combine multiple effects to optimize the performance of the self-powered PDs. Herein, patterned 2D ferroelectric perovskite (PMA)sub2/subPbClsub4/submicrobelt arrays were demonstrated through a PDMS template-assisted antisolvent crystallization method. The perovskite arrays based flexible photodetectors exhibited fine self-powered photodetection performance under 320 nm illumination and much enhanced reproducibility compared with the randomly distributed single-crystal microbelts-based PDs. Furthermore, by introducing the piezo-phototronic effect, the performance of the flexible PD was greatly enhanced. Under an external tensile strain of 0.71%, the responsivity was enhanced by 185% from 84 to 155.5 mA/W. Our findings offer the advancement of comprehensively utilizing various physical characteristics of the ferroelectrics for novel ferroelectric optoelectronics.

2D hybrid perovskite ferroelectrics have drawn great attention in the field of photodetection, because the spontaneous polarization-induced built-in electric field can separate electron-hole pairs, and makes self-powered photodetection possible. However, most of the 2D hybrid perovskite-based photodetectors focused on the detection of visible light, and only a few reports realized the self-powered and sensitive ultraviolet (UV) detection using wide bandgap hybrid perovskites. Here, 2D ferroelectric PMA

Bifacial semitransparent perovskite solar cells (BS-PSCs) have broad application prospects in the field of building-integrated photovoltaics, tandem solar cells as well as transparent chargeable devices. To fabricate high-performance BS-PSCs, the rear transparent electrode is one of the major obstacles should be overcome. Here, we develop a MoOx/Cu/Ag/MoOx multi-stacked electrode by thermal evaporation, and utilize it as a rear transparent electrode in the fabrication of high-performance n-i-p structure BS-PSCs. It is demonstrated that the minimum thickness required to obtain a continuous Ag film is reduced from 15 nm without the seed layer to 10 nm and the optical and electrical properties of multilayer transparent electrode are significantly enhanced. As a result, the BS-PSC device achieves the optimal power conversion efficiency of 13.44% at indium tin oxide side and 10.25% at MoOx/Cu/Ag/MoOx rear transparent electrode side, along with an average 8.67% optical transmittance for the visible light (400–800 nm) simultaneously. This work provides a promising approach to fabricate high-performance semitransparent and bifacial-operable optoelectronic devices in the future.

The Schottky back-contact barrier at the Mo/Cu(In,Ga)Se2 (CIGS) interface is one of the critical issues that restrict the photovoltaic performance of CIGS solar cells. The formation of a MoSe2 intermediate layer can effectively reduce this back-contact barrier leading to efficient hole transport. However, the selenium-free atmosphere is unfavorable for the formation of the desired MoSe2 intermediate layer if the CIGS films are prepared by the commonly used direct sputtering process. In this work, high-efficiency CIGS solar cells with a MoSe2 intermediate layer were fabricated by the direct sputtering process without a selenium atmosphere. This is enabled by an intermediate CIGS layer deposited on the Mo substrate at room temperature before being ramped to a high temperature (600 °C). The room-temperature-deposited amorphous CIGS intermediate layer is Se rich, which reacts with the Mo substrate and forms very thin MoSe2 at the interface during the high-temperature process. The formed MoSe2 decreased the CIGS/Mo barrier height for better hole transport. Consequently, the CIGS solar cell with an 80 nm intermediate layer achieved a power conversion efficiency of up to 15.8%, which is a benchmark efficiency for the direct sputtering process without Se supply. This work provides the industry a new approach for commercialization of directly sputtered CIGS solar cells.

Hydrogenated nanocrystalline silicon oxide/hydrogenated amorphous silicon oxide (nc-SiOx:H/a-SiOx:H) multilayer films were fabricated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique by alternate deposition of nc-SiOx:H and a-SiOx:H at a low substrate temperature of 220 °C. The effects of the amount of oxygen incorporation in the nc-SiOx:H sublayers on the structural and photoluminescence (PL) properties of nc-SiOx:H/a-SiOx:H multilayer films were investigated by transmission electron microscopy, Raman scattering, UV–VIS-NIR absorption spectra, steady and time-resolved PL spectra. As the amount of oxygen incorporation increases, the crystalline volume fraction of multilayer films decreases, while the intermediate-range order of multilayer films firstly increases and then decreases. Strong room temperature PL has been observed in the multilayer films and the correlation between structural and PL properties is discussed. This low-temperature procedure for fabricating nc-SiOx:H/a-SiOx:H multilayer films can provide powerful impetus for the further development of optoelectronic devices based on Si-NCs.

The Si-QDs/SiO2 multilayer films with phosphorus (P) doping have been prepared, and carrier multiplication effect of the films with and without P doping was investigated by relative quantum yield of photoluminescence (PL). The relative quantum yield of PL shows a step like increase when the excitation energy is larger than 2 E g of Si-QDs, and the carrier multiplication is caused by space-separated quantum cutting in adjacent QDs. The PL peak shifts toward high energy region after P-doping, and the PL intensity is enhanced, however, the threshold energy for carrier multiplication is decreased from 2.97 to 2.89 eV. The results suggest that non-radiative recombination at the surface of Si-QDs is suppressed by P passivation, and radiative recombination from conduction band to surface defect level is possible. Energy transfer from hot electron-hole pair to surface defect level leads to the optical excitation of defect level, which generates an extra electron-hole pair, and carrier multiplication effect is observed in the P-doped multilayer film with lower excitation energy.

CsPbI3 nanocrystals (NCs) with photoluminescence quantum yield (PLQY) larger than 90% have been synthesized at different temperature regions, and the physical origins for high PLQY were investigated. HRTEM images show that cubic phase CsPbI3 (α-CsPbI3) is surrounded by hexagonal Cs4PbI6 in the low temperature region, and the ratio of CsPbI3 and Cs4PbI6 increases with increasing the reaction temperature. The strong confinement effect of Cs4PbI6 leads to the high PLQY (95%) of α-CsPbI3 NCs when the reaction temperature is 120 °C. The confinement effect of Cs4PbI6 is weakened with increasing reaction temperature, which leads to the decrease of PLQY at 140 °C. However, non-radiative recombination is suppressed due to the microstructure improvement with further increasing the reaction temperature, and PLQY as high as 97% is achieved at 180 °C. Stability testing shows that fast degradation of α-CsPbI3 NCs occur in low reaction temperature region, and α-CsPbI3 NCs with high PLQY can be stored in air for 90 days when the reaction temperature is 180 °C.

Phosphorus (P) doped Si-quantum-dots/SiO 2 multilayer films have been deposited by plasma enhanced chemical vapor deposition (PECVD) technique, and Si quantum dots (Si-QDs) are obtained by the following annealing treatment. Raman and transmission electron microscopy (TEM) results show that P doping prevents the growth of Si-QDs. The photoluminescence (PL) intensity can be enhanced by proper P doping, and a maximal PL intensity is obtained when the doping flow ratio of phosphine and silicane is 0.75%. The resistivity of the films is reduced by P doping, and proper doping leads two orders of magnitude lower than that of the intrinsic films. Analysis shows that proper P doping in the multilayer films could fill the carrier capture center in interface and suppress the non-radiative recombination of carriers.

Si quantum dots (Si-QDs)/SiO2 multilayer films have been fabricated on Si substrate, and the carrier transport properties of heterojunctions consisting of Al:Si/SiO2:Si:Al are studied. The current density–voltage curves show that high density Si-QDs lead to higher current density and rectifying ratio. The carrier transports in the forward voltage are controlled by Ohmic resistance model, tunneling and recombination limited current (TRLC) model, and space-charge limited current (SCLC) model, respectively. The TRLC is quenched by hydrogen passivation, while the SCLC-limited carrier transport process becomes the main carrier transport mechanism, and a 7.6 times current density enhancement is obtained. It suggests that the SCLC-limited model is more effective for carrier transport in the studied device.

The evolution of photoluminescence (PL) from Si cluster to nanocrystal in Si-rich oxide (SRO)/SiO2 multilayer films is reported. Two PL bands can be obtained when the SRO layer thickness is no larger than 2 nm, and the high energy PL band (blue band) is related to the interband transition of Si cluster caused by quantum confinement effect (QCE), while the low energy band (red band) is related to the interface recombination. Both Si clusters and nanocrystals exist in the film when the SRO layer is increased to 3 nm, and the intense PL in the red band suggests that Si nanocrystals becomes the main light-emitting centers. The blue band disappears when the SRO layer is increased to 4 nm, and the PL mechanisms of the red band are QCE and interface defects in Si nanocrystals.

In this study, Si-nanocrystals (Si-NCs) have been prepared by annealing Si-rich oxide (SRO)/SiO2 multilayer films in Ar and N2, and the effects of annealing ambient on the photoluminescence (PL) properties are studied. XPS results show that the chemical compositions for the SRO and SiO2 layers are SiO1.1 and SiO2, respectively. FTIR results show that phase separation between Si and SiO2 occurs after annealing treatment, and Si-NCs are obtained which have been proved by the TEM images. Large and high density Si-NCs are obtained in the Ar-annealed film, and high structural disorder exists at the interface of Si-NCs. Compared with the film annealed in N2, a 2.4 times PL enhancement is obtained for the Ar-annealed sample, and the PL peak shifts toward low energy. Two lifetime distribution bands are obtained by fitting the time-resolved PL spectra, and the proportion of slow PL decay component increases from 69.7 to 84.0 %. The PL intensity for the Ar-annealed film is further enhanced by hydrogen passivation, and the slow PL decay component is increased to 87.5 %. Analyses show that both interface states recombination and quantum confinement effect (QCE) related optical transition in the Si-NCs exist in the optical emission process, and intense PL can be obtained only when the QCE become dominant PL mechanism.

Si quantum dots (Si-QDs) embedded in SiO 2 films have been prepared and multiple photoluminescence (PL) bands are obtained when the annealing temperature is below 900 °C. Microstructure analyses show that the Si-QDs are crystallized only when the annealing temperature is as high as 1000 °C, and the ultra-small Si-QDs are surrounded by SiO x compounds. Multiple peaks can be observed in the PL and PL excitation spectra. The multiple PL bands can be fitted to a broad band located at 2.2 eV together with seven narrow bands, and the energy separations for the adjacent narrow PL bands are between 140 meV and 158 meV, while the PL excitation spectrum can be fitted to eight optical excitation bands with energy separations about 160 meV. The broad PL band located at 2.2 eV is related to self-trapped exciton optical emission of ultra-small Si-QDs, while the narrow bands are caused by optical phonon assisted optical emissions, and both the PL excitation and emission processes can be explained in the configurational–coordinate model. Time-resolved PL spectra show that the average decay times of 8.9–9.5 ns are obtained for all the narrow PL peaks.

In this work, Si-rich oxide (SRO)/SiO2 multilayer films have been deposited and the photoluminescence (PL) decay properties of the films with different annealing temperatures are studied. The PL shifts toward low energy with increasing the annealing temperature, and intense PL at around 1.4 eV is obtained after annealing at 1100 °C. The PL decay curves can be well fitted by a multiexponential PL decay model, and the peak of the PL lifetime distribution band shifts toward longer time with increasing the annealing temperature. Two lifetime distribution bands are obtained after the formation of crystallized Si-QDs, and the proportion of slow component increases from 69.72% to 77.04% after hydrogen passivation. Analyses show that defect states recombination in the SRO layer is the main optical emission mechanism when the annealing temperature is lower than 900 °C, and interband transition in the Si-QDs due to quantum confinement effect is the main PL mechanism when the film is annealing at 1100 °C.

Si-rich oxide/SiO2 multilayer films with different SiO2 layer thicknesses have been deposited by the plasma enhanced chemical vapor deposition technique, and crystallized Si quantum dot (Si-QD)/SiO2 multilayer films are obtained after annealing at 1100 ∘C. The photoluminescence (PL) intensity of the multilayer films increases significantly with increasing SiO2 layer thickness, and the PL peak shifts from 1.25 eV to 1.34 eV. The PL excitation spectra indicate that the maximal PL excitation intensity is located at 4.1 eV, and an excitation–transfer mechanism exists in the excitation processes. The PL decay time for a certain wavelength is a constant when the SiO2 thickness is larger than 2 nm, and a slow PL decay process is obtained when the SiO2 layer is 1 nm. In addition, the PL peak shifts toward high energy with decreasing temperature only when the SiO2 layer is thick enough. Detailed analyses show that the mechanism of PL changes from the quantum confinement effect to interface defects with decreasing SiO2 layer thickness.

The carrier recombination processes in low density nanocrystalline (nc-) Si films have been studied by steady and time-resolved photoluminescence (PL) spectra, and the hot carriers have been excited to a high energy state by impact excitation. A yellow-green PL band locating at 580 nm appears when the studied film is excited by two optical beams. The yellow-green PL band results from band-to-band transition in Si nanocrystals with double-bonded oxygen atoms, which is caused by impact excitation among the carriers in the nc-Si film. The decay time of the yellow-green PL band is 230 ns, which is much longer than the hot carrier cooling. The results indicate that the lost energy in the solar cell may be collected from the new recombination center in the further structural design.

A report on strong and fast blue photoluminescence (PL) from silicon nanocrystals (Si-ncs) suspended in toluene solution is presented. They were fabricated through nanosecond pulsed laser ablation of the silicon target in toluene. Transmission electron microscopy observations confirm that the Si-ncs are well dispersed and the most of them are smaller than 2 nm. Fourier transform infrared spectra indicate that the surface of the Si-ncs is passivated by some groups from toluene. The detailed study of PL spectra and PL excitation spectra reveals that the photoexcited carriers not only are present in the quantum confined Si-ncs cores but also occur at the Si-ncs surface, and the resonant electron transfer from the surface bonding states to the conduction band of quantum confined Si-ncs can efficiently occur. Time-resolved PL spectrum exhibits a triple-exponential PL decay with lifetimes of 0.73, 3.8 and 13.5 ns, and implies that the optical recombinations and the resonant electron transfer are both very rapid and of the order of nanoseconds.

We have demonstrated an adjustable double-clad Yb 3+ -doped fiber laser using a double-pass Mach–Zehnder interferometer. The laser is adjustable over a range of 40 nm from 1064 nm to 1104 nm. By adjusting the state of the polarization controller, which is placed in the double-pass Mach–Zehnder interferometer, we obtained central lasing wavelengths that can be accurately tuned with controllable spacing between different tunable wavelengths. The laser has a side mode suppression ratio of 42 dB, the 3 dB spectral width is less than 0.2 nm, and the slope efficiencies at 1068 nm, 1082 nm and 1098 nm are 23%, 32% and 26%, respectively. In addition, we have experimentally observed tunable multi-wavelengths lasing output.

Nanocrystalline (nc)-SiC film has been deposited by helicon wave plasma enhanced chemical vapor deposition technique and intense blue-white light emission is obtained. Microstructure analyses show that the 3C–SiC particles are embed in amorphous SiC matrix, and the average size of the nc-SiC is 3.96 nm. The photon energy of the main photoluminescence (PL) band is higher than the band gap of bulk SiC, which indicates that the optical emission mainly occurs in quantum states of 3C–SiC nanocrystals. In addition, the band tail states of amorphous SiC also contribute to the optical emission. Three decay processes are obtained from time-resolved PL spectra by deconvolution treatment, and the decay components correspond to the quantum confinement effect (QCE), surface states of nc-SiC particles, and band tail of amorphous SiC, respectively. The fractional integrated PL intensity of QCE related decay process decreases dramatically in the lower PL photon energy, indicating that the QCE mainly contributes to the short wavelength optical emission.

Hydrogenated nanoamorphous Si (na-Si:H) films have been fabricated by reactive pulsed laser ablation technique with hydrogen as reactive gas. It is found that the hydrogen pressure has a great effect on both the structure and photoluminescence (PL) properties of the films. Increasing the hydrogen pressure leads to a structural transition of the films from amphorous Si to na-Si:H, and the PL center wavelength of the na-Si:H films is varied with the hydrogen pressure. The PL decay times of the na-Si:H films are in the nanosecond scale and are shorter on the high energy side of their PL spectrum. The results demonstrate that the na-Si:H films are promising candidates for visible, tunable and high-performance light-emitting devices.

Compression of chirped free femtosecond pulses in hollow-core photonic bandgap fibers is investigated numerically. The results show that intrapulse stimulated Raman scattering can improve the quality of the compressed pulse. Positive third-order dispersion is the main limitation on the compression of the femtosecond pulse. However, the combined effect of the intrapulse stimulated Raman scattering and the negative third-order dispersion can form still shorter pulses than is possible with intrapulse stimulated Raman scattering alone. We also investigate the influence of width and peak power of input pulse on pulse compression.

Nanocrystalline silicon carbide (nc-SiC) thin films have been grown on silicon (1 0 0) substrates by helicon wave plasma enhanced chemical vapor deposition technique and the photoluminescence of the films has been tuned from yellow to blue by changing the substrate temperatures (Ts). The resulting nc-SiC films show a microstructure of 3C–SiC nanocrystallites embedded in hydrogenated amorphous SiC matrix. Detailed analysis of the infrared absorption reveals that the degree of crystallization of the films increases with the increase of Ts while the content of hydrogen-related bonds in the films is decreased. The photoluminescence spectra of the nc-SiC films are found to be composed of two Gaussian components. As the Ts increases, the component with higher energy shows a growing trend and the corresponding peaks move to high energy side, indicating that the main luminescence mechanism in the films changes from the defect-related carrier recombination to the quantum confinement effect.

Silver (Ag) island films have been prepared by pulsed laser ablation in vacuum using a XeCl excimer laser. The effects of the number of ablation pulses, the temperature and time of post-annealing on morphology and surface plasmons properties of the prepared Ag island films were investigated by extinction spectra and scanning electron microscopy. It is found that the films deposited with the ablation pulses of 60 or less are isolated Ag nanoparticles and the mean size of the nanoparticles increases monotonically with increasing the number of ablation pulses. Further increase of the number of ablation pulses up to 240, quasi-percolated Ag films are obtained, and for 600 pulses or more, continuous films will be formed. Extinction spectra results show that localized surface plasmons (LSPs) are supported by the Ag island films, while propagating surface plasmons are supported by the continuous Ag films. The LSPs of Ag island films consist of inplane and out-of-plane modes. By changing the ablation pulse numbers and annealing conditions, the longitudinal and transverse dimensions of Ag islands could be adjusted, and then the peak positions and peak widths of in-plane and outof- plane LSPs resonance modes could be effectively controlled.

Compression of chirped free femtosecond pulses in hollow core photonic bandgap fibers is investigated numerically. The results show that intrapulse stimulated Raman scattering can improve the quality of the compressed pulse. Positive third-order dispersion is the main limitation on the compression of the femtosecond pulse. However, the combined effect of the intrapulse stimulated Raman scattering and the negative third-order dispersion can form still shorter pulses than is possible with intrapulse stimulated Raman scattering alone. We also investigate the influence of width and peak power of input pulse on pulse compression.

Amorphous silicon oxide containing nanocrystalline silicon grain (nc-SiOx:H) films are prepared by a plasma-enhanced chemical vapor deposition technique at different negative substrate bias voltages. The influence of the bias voltage applied to the substrate on the microstructure is investigated. The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si. The grain size can be well controlled by varying the substrate bias voltage, and the largest size is obtained at 60 V. Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiOx:H films suggest that the absorption peak intensities, which are related to the defect densities, can be well controlled. It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process, which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds. Also the larger grain size and lower band gap, which will result in better photosensitivity, can also be obtained with a moderate substrate bias voltage of 60 V.

Si-rich oxide/SiO 2 multilayer films with different N 2 O flow rates have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dot (Si-QD)/SiO 2 multilayer films are obtained by 1100 °C annealing. Steady photoluminescence (PL) spectra show that the main optical emission mechanism changes from quantum confinement effect of Si-QDs to interface defect states with increasing the flow rate of N 2 O. Curve fittings of time-resolved PL spectra show that two log-normal decay time distribution bands are obtained, and both the most frequent life-times decrease with increasing the flow rate of N 2 O, while increase with the red shift of detecting wavelength. Analyses indicate that defect states density and size distribution of Si-QDs strongly influence the PL decay properties.

Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.

Nanocrystalline silicon embedded in silicon oxide (nc- Si/SiO2 ) films have been in situ grown at a low substrate temperature of 300°C by reactive magnetron co-sputtering of Si and SiO2 targets in a mixed Ar/H2 discharge. The influences of H2 flow rate (F H ) on the microstructural properties of the deposited nc- Si/SiO2 films were investigated. The results of XRD and the deposition rate of nc- Si/SiO2 films show that the introduction of H2 contributes to the growth of nc- Si grains in silicon oxide matrix. With further increasing F H , the average size of nc- Si grains increases and the deposition rate of nc- Si/SiO2 films decreases gradually. Fourier transform infrared spectra analyses reveal that introduction of hydrogen contributes to the phase separation of nc- Si and SiO x in the deposited films. Moreover, the Si–O 4-n Si n(n = 0, 1) concentration of the deposited nc- Si/SiO2 films reduces with the increase of F H , while that of Si – O 4-n Si n(n = 2, 3) concentration increases. These results can be explained by that active hydrogen atoms increase the probability of reducing oxygen from precursor in the plasma and prompting oxygen desorption from the growing surface. This low-temperature procedure for preparing nc- Si/SiO2 films opens up the possibility of fabricating the silicon-based thin-film solar cells onto low-cost glass substrates using nc- Si/SiO2 films.

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique, and optical emissions from the near-infrared to the visible are obtained. The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content, and the photoluminescence (PL) peak shifts from 1.51 eV to 2.16 eV. The band tail state PL mechanism is confirmed by analysing the optical band gap, PL intensity, the Stocks shift of the PL, and the Urbach energy of the film. The PL decay times of the samples are in the nanosecond scale, and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

The generation of high energy, wavelength-tuned supercontinuum sources has been investigated numerically. A stable wavelength-tunable soliton source was first obtained by compressing a pulse with a parabolic shape in a dispersion decreasing fiber. Subsequently, a widely tunable supercontinuum was generated by propagating the resulting soliton in a highly nonlinear silica fiber. In this paper, we have also investigated the influence of the width, the initial chirps, and the pulse shape of the compressed pulse on the generation of the supercontinuum.

We have theoretically studied pulse propagation in a normal-dispersion optical cubicon fiber amplifier with an arbitrary longitudinal gain profile, and we have obtained expressions for the phase ϕ(z,τ), chirp δω, and amplitude A(z,τ) for such amplifiers when the nonlinear phase shifts and the third order dispersion (TOD) are all included. The results show that the characteristics of self-similarity and linear chirp are lost due to the TOD. However, by using mutual compensation between the nonlinear phase and the TOD, we can still obtain a pulse with optimal compression. Furthermore, for a given TOD, there exists an optimal nonlinear phase for compressing the pulse. A numerical simulation is consistent with the analytical results.

Multilayer structures of nanocrystalline (nc-) SiC/silicon nitride spacer/Ag island films were designed by varying the spacer thickness, and the spectral characteristics of surface-plasmons (SPs)–enhanced photoluminescence (PL) in nc-SiC films have been investigated. The optical transmission spectra show that there are two SPs resonant optical absorption bands in the out-of-plane and in-plane modes for the Ag island film on the sample surface. While PL quenching occurred for the sample with the thinnest spacer, the maximum PL enhancement for nc-SiC is achieved when the thickness of the spacer is suitable, suggesting that the SP enhancement can dominate over nonradiative energy dissipation by varying the spacer thickness. In the case of PL enhancement, the PL excitation spectrum shows an enhancement peak at the resonant wavelength of the out-of-plane mode of SPs, indicating that the excitation enhancement in nc-SiC films occurs due to the incident-light resonant coupling with out-of-plane SPs. Whereas, the increased PL decay rate is observed in the temporal PL spectrum, implying that the SPs scattering enhancement in the nc-SiC film is induced by in-plane SP resonant coupling. In the case of PL quenching, although an enhancement factor less than 1 is observed in the PL excitation spectrum, an increased light emission decay rate is also revealed in the temporal PL spectrum, which indicates that the nonradiative energy dissipation of light emission in the Ag island film is the main coupling mechanism when the spacer is too thin.