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3. Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy.

Author

Huffaker, D. L., Hains, C. P., Nuntawong, N., Xin, Y. C., Wong, P. S., Xue, L., Brueck, S. R. J., and Lester, L.

Subjects
PHOTOLUMINESCENCE, QUANTUM dots, ORGANOMETALLIC compounds, CHEMICAL vapor deposition, EPITAXY, LASERS
Abstract

We analyze temperature-dependent photoluminescence (PL) behavior of patterned InAs/GaAs quantum dots (PQDs) formed by selective area epitaxy using metalorganic chemical vapor deposition. The processing scheme, described here, yields an ensemble of electronically isolated PQDs with PL characteristics that significantly differ from self-assembled (SA) QDs since neither a wetting layer nor neighboring QDs are available for coupling. The isolated nature of the PQDs supports a non-Fermi (nonequilibrium) carrier distribution which yields very different PL characteristics compared to the Fermi (equilibrium) distribution of the SAQDs especially at temperatures >100 K. Thus, the PQDs demonstrate a constant PL linewidth within the temperature range of 80–300 K along with improved temperature stability of PL intensity in comparison to SAQDs. The increased temperature stability allowed by electronic isolation may prove very important for high speed, temperature-insensitive QD laser development. [ABSTRACT FROM AUTHOR]

Published
2006
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5. InAs quantum-dot GaAs -based lasers grown on AlGaAsSb metamorphic buffers

Author

Xin, Y. -C., Vaughn, L. G., Dawson, L. R., Stintz, A., Lin, Y., Lester, L. F., and Huffaker, D. L.

Subjects
Gallium arsenide -- Research, Gallium arsenide -- Properties, Lasers -- Usage, Laser, Physics
Abstract

A method that reduces the lattice mismatch between the InAs quantum dots (QDs) and their surrounding material to extend the GaAs based QD emission wavelength is proposed. The density and the ground state transition of the resulting QD ensemble are lined out.

Published
2003

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