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In this study, a detector is developed using deuterated L‐alanine doped triglycine sulfate (DLATGS) crystals capable of detecting circularly polarized light (CPL) and various polarization states. As a primary pyroelectric detection crystal, DLATGS has exhibited notable optical responses to both linearly and circularly polarized light during the tests, demonstrating a favorable polarization ratio of 3.86 and an anisotropic factor glph${g}_{lph}$ of 0.529. The research discovers the broad‐spectrum bulk photovoltaic (BPVE) characteristics in DLATGS, highlighting its potential for CPL detection. By integrating linear and circular bulk photovoltaic effect theories (LBPV and CBPV), the crystal's ability to differentiate between various polarization modes, including left‐/right‐handed polarized light, is confirmed. The BPVE and pyro‐phototronic coupling responses is characterized, laying a theoretical foundation for a rare pyroelectric effect‐based multifunctional polarization detector. The overall consistency of phenomena and theoretical framework bridges the gap between theoretical predictions and experimental validation. This work not only advances the understanding of DLATGS crystals but also sets the stage for further exploration into chiral materials and the development of TGS‐type crystals in future photoelectronic detectors. [ABSTRACT FROM AUTHOR]

Conventional photodetectors overly pursue high light‐to‐electric conversion efficiency under weak light stimulation, while disregarding the saturated absorption‐induced blinding effect upon strong light, and achieving efficient photodetection covering a large power range remains a great challenge. In this work, MoS2/BaTiO3 heterostructures are constructed through a low‐cost exfoliation and transfer method combined with spin‐coating. The photoresponse behaviors before and after assembling the BaTiO3 nanoparticles onto the MoS2 nanoflake are investigated, indicating that the high conductivity of MoS2 and ferroelectricity of BaTiO3 can complement each other to improve the photoresponse of the hetero‐integrated device, acquiring a high photoresponsivity of 17402 A W−1 under 0.2 nW irradiation, and a significant 570 µA photocurrent under 8 mW irradiation, realizing a large linear dynamic range index of 152 dB, which is at the top level among layered semiconductor‐based detectors. Moreover, strong power near‐infrared light can be up‐converted to the visible band through the nonlinear effect of BaTiO3, subsequently absorbed by the MoS2 and contributing to the photocurrent, providing a solution to combat and alleviate the saturated absorption issue in photodetection. This work marks a significant advancement in achieving robust high‐performance photodetection by hetero‐integrating 2D materials with ferroelectrics. [ABSTRACT FROM AUTHOR]

Two‐dimensional (2D) materials are widely used in numerous optoelectronic devices due to their ultra‐thin dimensions and versatile surfaces. However, less attention is paid to distinguishing the light‐matter interactions along the vertical and horizontal paths within the same 2D lattice, as well as comparatively investigating the optoelectronic behaviors between the sensitive top and bottom surfaces. Here, a dual‐crossbar configured architecture is designed and constructed based on Bi2O2Se semiconductor, featuring highly compact three‐in‐one assembly, namely bottom surface horizontal (BSH), middle sandwich vertical (MSV) and top surface horizontal (TSH) devices. The MSV with nanoscale channel possesses efficient separation and transportation of the photogenerated electrons and holes, responding faster to the light stimulation and compared favorably to the BSH and TSH devices. The optoelectric behaviors of the BSH device can be regulated by the characteristics of the substrate due to closer contact. Nevertheless, the performance of the TSH device is more sensitive to the environment, such as dopant absorption and heat dispersion, thus enabling the non‐volatile photoresponse and can be employed as an artificial optoelectronic synapse. This work highlights the importance of designing the device architecture based on the intrinsic structural advantages of 2D materials, paving the way toward integrated optoelectronics. [ABSTRACT FROM AUTHOR]

Infrared images have been widely employed in many fields. However, the relative motion between a target and an imaging device and the interference of salt-and-pepper noise lead to the degradation of infrared images. Traditional infrared image recovery methods require an image to be restored as a whole, which leads to mutual interference between the cartoon and texture parts of an image in the restoration process. In this study, a morphological component analysis decomposition method was developed. This method decomposes an image into cartoon and texture parts. Meanwhile, the $ {l_p} $ l p pseudo-norm is introduced to characterize the sparsity of the stationary Framelet transform coefficients and noise, and mask matrix is applied to protect parts that were not contaminated. The proposed method was then solved using an alternating-direction multiplier method. The proposed method was compared with more advanced image recovery methods. The results show that the proposed method has a significant performance improvement. [ABSTRACT FROM AUTHOR]

Lithium niobate (LN) is widely used in various optoelectronic systems due to its structural anisotropy and ferroelectric feature, which is one of the most essential platforms for next‐generation integrated optoelectronics. However, the insulating and optically transparent characteristics of LN have greatly limited the application in photodetection. Here, a high‐performance LN/WS2 based photodetector is achieved through a van der Waals integration strategy in which the pyroelectric property of LN and the moderate bandgap of WS2 are well combined. Upon light illumination, the light induced carriers in WS2 would increase and the pyroelectric charges of LN will cross the interfacial gap and asymmetrically inject into the WS2, creating an n−/n+ homojunction, thus improving the on‐state current. Under dark conditions, the sudden removal of the laser would introduce an instantaneous enhancement of polarization in the LN lattice, leading to an improved confinement on the remaining carriers in WS2, achieving a lower dark current. In this regard, the configurated device acquires a high on/off ratio more than 104 under zero bias, which represents the best among all the reported LN‐based photodetectors. This work realizes the complementary integration of 2D materials and ferroelectric LN and provides a feasible way for high‐performance photodetectors based on the LN platform. [ABSTRACT FROM AUTHOR]