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Electric control of spin in insulators is desired for low-consumption and ultrafast spintronics, but the underlying mechanism remains largely unexplored. Here, we propose an intrinsic effect of dynamic spin generation driven by time-varying electric field. In the intraband response regime, it can be nicely formulated as a Berry curvature effect and leads to two phenomena that are forbidden in the $dc$ limit: linear spin generation in nonmagnetic insulators and intrinsic N{\'e}el spin-orbit torque in $\mathcal{PT}$-symmetric antiferromagnetic insulators. These phenomena are driven by the time derivative of field rather than the field itself, and have a quantum origin in the first-order dynamic anomalous spin polarizability. Combined with first-principles calculations, we predict sizable effects driven by terahertz field in nonmagnetic monolayer Bi and in antiferromagnetic even-layer MnBi$_2$Te$_4$, which can be detected in experiment.

We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly-polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry-forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect, and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals $\mathrm{PbTaSe_{2}}$ and PdGa. Our work establishes a fundamental nonlinear response in spin transport, and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.

We show that the three commonly employed approaches that define the same intrinsic linear anomalous Hall response actually lead to different results for intrinsic nonlinear transport. The difference arises from an intrinsic anomalous distribution. It originates from scattering, but its value is completely independent of scattering, because it represents the local equilibration of electron wave packets with field corrected energy. As a manifestation, we find that under ac driving, the intrinsic contributions in rectified component and in double-frequency component exhibit distinct frequency dependence, which can be probed in experiment. Using first-principles calculations, we estimate the signals that can be probed in antiferromagnetic CuMnAs.

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe$_2$ moir\'e superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic configurations. The dipole Hall current, in linear response to in-plane electric field, generates an in-plane orbital magnetization $M_{\parallel}$ along the field, through which an AC field can drive magnetization oscillation up to THz range. Upon the continuous topological phase transitions from trivial to quantum anomalous Hall states in both ferromagnetic and antiferromagnetic configurations, the dipole Hall current and $M_{\parallel}$ have an abrupt sign change, enabling contact free detection of the transitions through the magnetic stray field. In configurations where the linear response is forbidden by symmetry, the dipole Hall current and $M_{\parallel}$ appear as a crossed nonlinear response to both in-plane and out-of-plane electric fields. These magnetoelectric phenomena showcase novel functionalities of insulators from the interplay between magnetism, topology and electrical polarization., Comment: 6 pages, 4 figures

It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe$_3$Sn$_2$ displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects., Comment: 18 pages, 4 figures, featured in Physics: Viewpoint and Editors' suggestions

The intrinsic planar Hall effect has attracted intensive interest inspired by recent experiments. Existing theories of this effect require three dimensional orbital motion, or strong spin-orbit coupling of certain forms, which do not exist in van der Waals thin films. Here, we uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that allows its presence even in bilayer and trilayer atomically thin limit. As examples, we show that the effect can be triggered by strain and interlayer sliding respectively in twisted bilayer graphene and trilayer transition metal dichalcogenides, where the effect features rich tunability and even stronger magnitude than those induced by topological nodal structures in bulk materials. The layer mechanism also provides a new route towards quantized Hall response upon a topological phase transition induced by in-plane magnetic field. These results unveil the unexplored potential of quantum layertronics and moir\'e flat band for planar Hall transport., Comment: 6 pages, 5 figures

Nonlinear spin polarization occurring in the second order of driving electric current is the dominant source of nonequilibrium magnetization in centrosymmetric or weakly noncentrosymmetric nonmagnetic materials, and induces nonlinear spin-orbit torque in magnets. Up to now, only the intrinsic mechanism based on anomalous spin polarizability dipole, which is the spin counterpart of Berry curvature dipole, has been studied, while disorder induced mechanisms are still missing. Here, we derive these contributions, which include not only the anomalous distribution function due to skew scattering and coordinate shift, but also interband coherence effects given by disorder induced spin shift and electric field induced anomalous scattering amplitude. We demonstrate these terms and show their importance in a minimal model. A scaling law for nonlinear current-induced spin polarization is constructed, which may help analyze experimental data in the future.

Effects manifesting quantum geometry have been a focus of physics research. Here, we reveal that quantum metric plays a crucial role in nonlinear electric spin response, leading to a quantum metric spin-orbit torque. We argue that enhanced quantum metric can occur at band (anti)crossings, so the nonlinear torque could be amplified in topological metals with nodal features close to Fermi level. By applying our theory to magnetic Kane-Mele model and monolayer CrSBr, which feature nodal lines and Weyl points, we demonstrate that the quantum metric torque dominates the response, and its magnitude is significantly enhanced by topological band structures, which even surpasses the previously reported linear torques and is sufficient to drive magnetic switching by itself.

The Nernst effect is a fundamental thermoelectric conversion phenomenon that was deemed to be possible only in systems with magnetic field or magnetization. In this work, we propose a novel dynamical chiral Nernst effect that can appear in two-dimensional van der Waals materials with chiral structural symmetry in the absence of any magnetic degree of freedom. This unconventional effect is triggered by time variation of an out-of-plane electric field, and has an intrinsic quantum geometric origin linked to not only the intralayer center-of-mass motion but also the interlayer coherence of electronic states. We demonstrate the effect in twisted homobilayer and homotrilayer transition metal dichalcogenides, where the strong twisted interlayer coupling leads to sizable intrinsic Nernst conductivities well within the experimental capacity. This work suggests a new route for electric control of thermoelectric conversion.

The recent constructions of flat moir\'e minibands in specifically twisted multilayer graphene and twisted transition metal dichalcogenides (TMDs) have facilitated the observation of strong correlations with a convenient tunability. These correlations in flat bands result in the band dispersion heavily influenced by carrier densities, leading to filling-dependent quasiparticle band renormalizations. Particularly, in magic-angle twisted bilayer graphene (MATBG), the band structure--including the quasiparticle energy and wavefunction--is crucial in understanding the correlated properties. Previous theoretical studies have demonstrated the presence of a time-reversal-even charge Hall counterflow in response to a direct current (DC) electric field in twisted bilayers as chiral structures. In this study, we show that such layer Hall counterflow can serve as a sensitive probe for MATBG model parameters, which are currently ambiguous as a result of unavoidable structural relaxation and twist-angle disorder. We present the layer Hall counterflow and the associated in-plane magnetization for three different MATBG continuum models, based on which many-body interacting models have been widely applied to study strong correlations in MATBG. At the single-particle level, our findings indicate notable differences in layer-projected Hall conductivity, both in magnitude and sign, between different MATBG continuum models. Furthermore, our self-consistent Hartree calculations, performed on each of these single-particle continuum models, reveal renormalized layer-projected Hall conductivity by the self-consistent Hartree field.

We show that interlayer charge transfer in 2D materials can be driven by an in-plane electric field, giving rise to electrical multipole generation in linear and second order of in-plane field. The linear and nonlinear effects have quantum geometric origins in the Berry curvature and quantum metric respectively, defined in extended parameter spaces characteristic of layered materials. We elucidate their symmetry characters, and demonstrate sizable dipole and quadrupole polarizations respectively in twisted bilayers and trilayers of transition metal dichalcogenides. Furthermore, we show that the effect is strongly enhanced during the topological phase transition tuned by interlayer translation. The effects point to a new electric control on layer quantum degree of freedom., Comment: 20 pages, 4 figures

Motor imagery EEG classification plays a crucial role in non-invasive Brain-Computer Interface (BCI) research. However, the classification is affected by the non-stationarity and individual variations of EEG signals. Simply pooling EEG data with different statistical distributions to train a classification model can severely degrade the generalization performance. To address this issue, the existing methods primarily focus on domain adaptation, which requires access to the target data during training. This is unrealistic in many EEG application scenarios. In this paper, we propose a novel multi-source domain generalization framework called EEG-DG, which leverages multiple source domains with different statistical distributions to build generalizable models on unseen target EEG data. We optimize both the marginal and conditional distributions to ensure the stability of the joint distribution across source domains and extend it to a multi-source domain generalization framework to achieve domain-invariant feature representation, thereby alleviating calibration efforts. Systematic experiments on a simulative dataset and BCI competition datasets IV-2a and IV-2b demonstrate the superiority of our proposed EEG-DG over state-of-the-art methods. Specifically, EEG-DG achieves an average classification accuracy/kappa value of 81.79%/0.7572 and 87.12%/0.7424 on datasets IV-2a and IV-2b, respectively, which even outperforms some domain adaptation methods. Our code is available at https://github.com/XC-ZhongHIT/EEG-DG for free download and evaluation.

Time-reversal-odd ($\mathcal{T}$-odd) nonlinear current response has been theoretically proposed and experimentally confirmed recently. However, the role of disorder scattering in the response, especially whether it contributes to the $\sigma_{xx}$-independent term, has not been clarified. In this work, we derive a general scaling law for this effect, which accounts for multiple scattering sources. We show that the nonlinear conductivity is generally a quartic function in $\sigma_{xx}$. Besides intrinsic contribution, extrinsic contributions from scattering also enter the zeroth order term, and their values can be comparable to or even larger than the intrinsic one. Terms beyond zeroth order are all extrinsic. Cubic and quartic terms must involve skew scattering and they signal competition between at least two scattering sources. The behavior of zeroth order extrinsic terms is explicitly demonstrated in a Dirac model. Our finding reveals the significant role of disorder scattering in $\mathcal{T}$-odd nonlinear transport, and establishes a foundation for analyzing experimental result., Comment: 6 pages, 1 figure

Realizing topological semimetal states with novel emergent fermions in magnetic materials is a focus of current research. Based on first-principle calculations and symmetry analysis, we reveal interesting magnetic emergent fermions in an existing material MnB2. In the temperature range from 157 K to 760 K, MnB2 is a collinear antiferromagnet. We find the coexistence of eightfold nodal points and nodal net close to the Fermi level, which are protected by the spin group in the absence of spin-orbit coupling. Depending on the Neel vector orientation, consideration of spin-orbit coupling will either open small gaps at these nodal features, or transform them into magnetic linear and quadratic Dirac points and nodal rings. Below 157 K, MnB2 acquires weak ferromagnetism due to spin tilting. We predict that this transition is accompanied by a drastic change in anomalous Hall response, from zero above 157 K to 200 $\Omega\cdot \text{cm}^{-1}$ below 157 K., Comment: 5 figures and 7 pages

In twisted MoTe$_{2}$, latest transport measurement has reported observation of quantum anomalous Hall effect at hole filling $\nu=-1$, which undergoes a topological phase transition to a trivial ferromagnet as layer hybridization gets suppressed by interlayer bias $D$. Here we show that this underlies the existence of an orbital Chern insulating state with gate ($D$) switchable sign in an antiferromagtic spin background at hole filling $\nu=-2$. From momentum-space Hartree Fock calculations, we find this state has a topological phase diagram complementary to that of the $\nu=-1$ one: by sweeping $D$ from negative to positive, the Chern number of this $\nu=-2$ state can be switched between $+1$, $0$, and $-1$, accompanied by a sign change of a sizable orbital magnetization. In range of $D$ where this antiferronagnet is the ground state, the orbital magnetization allows magnetic field initialization of the spin antiferromagnetic order and the Chern number., Comment: 6 pages, 4 figures

We theoretically investigate the nonlinear response current of a two-dimensional system under an in-plane magnetic field. Based on the extended semiclassical theory, we develop a unified theory including both longitudinal and transverse currents and classify contributions according to their scaling with the relaxation time. Besides time-reversal-even contributions, we reveal a previously unknown time-reversal-odd contribution to the Hall current, which occurs in magnetic systems, exhibits band geometric origin, and is linear in relaxation time. We show that the different contributions exhibit different symmetry characters, especially in their angular dependence on the field orientation, which can be used to distinguish them in experiment. The theory is explicitly demonstrated in the study of the Rashba model. Our work presents a deepened understanding of nonlinear planar transport, proposes approaches to distinguish different contributions, and sheds light on possible routes to enhance the effect in practice., Comment: 10 pages, 6 figures

We propose a novel nonlinear dynamical Hall effect characteristic of layered materials with chiral symmetry, which is driven by the joint action of in-plane and time variation of out-of-plane ac fields $\boldsymbol{j}_{\text{H}}\sim\boldsymbol{\dot{E}_{\perp}}\times\boldsymbol{E}_{\parallel}$. A new band geometric quantity -- interlayer Berry connection polarizability, which probes a mixed quantum metric characteristic of layer hybridized electrons by twisted interlayer coupling, underlies this effect. When the two orthogonal fields have common frequency, their phase difference controls the on/off, direction and magnitude of the rectified Hall current. We show sizable effects in twisted homobilayer transition metal dichalcogenides and twisted bilayer graphene over broad range of twist angles. Our work opens the door to discovering mixed quantum metric responses unique to van der Waals stacking and concomitant applications under the nonlinear spotlight., Comment: Add discussions of quantum metric contribution to the effect. To appear in Phys. Rev. Res

Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in-plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity -- the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials $\mathrm{TaSb_{2}}$, $\mathrm{NbAs_{2}}$, and $\mathrm{SrAs_{3}}$. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.

We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit torque in magnets. We reveal a quantum origin of this effect from the momentum space dipole of the anomalous spin polarizability. First-principles calculations predict sizable spin generations in several nonmagnetic hcp metals, in monolayer TiTe$_{2}$, and in ferromagnetic monolayer MnSe$_{2}$, which can be detected in experiment. Our work opens up the broad vista of nonlinear spintronics in both nonmagnetic and magnetic systems., Comment: 4 pages, 2 figures

Magnetic topological materials and their physical signatures are a focus of current research. Here, by first-principles calculations and symmetry analysis, we reveal topological semimetal states in an existing antiferromagnet ThMn2Si2. Depending on the N\'eel vector orientation, the topological band crossings near the Fermi level form either a double-nodal loop or two pairs of Dirac points,which are all fourfold degenerate and robust under spin-orbit coupling. These topological features produce large Berry connection polarizability, which leads to enhanced nonlinear transport effects. Particularly, we evaluate the third order current response, which dominates the transverse charge current. We show that the nonlinear response can be much more sensitive to topological phase transitions than linear response, which offers a powerful tool for characterizing magnetic topological semimetals., Comment: 5 pages, 5 figures

We propose an intrinsic nonlinear planar Hall effect, which is of band geometric origin, independent of scattering, and scales with the second order of electric field and first order of magnetic field. We show that this effect is less symmetry constrained compared to other nonlinear transport effects and is supported in a large class of nonmagnetic polar and chiral crystals. Its characteristic angular dependence provides an effective way to control the nonlinear output. Combined with first-principles calculations, we evaluate this effect in the Janus monolayer MoSSe and report experimentally measurable results. Our work reveals an intrinsic transport effect, which offers a new tool for material characterization and a new mechanism for nonlinear device application., Comment: 6 pages, 3 figures

Under time-reversal symmetry, a linear charge Hall response is usually deemed to be forbidden by the Onsager relation. In this work, we discover a scenario for realizing a time-reversal even linear charge Hall effect in a non-isolated two-dimensional crystal allowed by time reversal symmetry. The restriction by Onsager relation is lifted by interfacial coupling with an adjacent layer, where the overall chiral symmetry requirement is fulfilled by a twisted stacking. We reveal the underlying band geometric quantity as the momentum-space vorticity of layer current. The effect is demonstrated in twisted bilayer graphene and twisted homobilayer transition metal dichalcogenides with a wide range of twist angles, which exhibit giant Hall ratios under experimentally practical conditions, with gate voltage controlled on-off switch. This work reveals intriguing Hall physics in chiral structures, and opens up a research direction of layertronics that exploits the quantum nature of layer degree of freedom to uncover exciting effects., Comment: Supplementary Information included. To appear in Nature Communications

Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium iron garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic gadolinium gallium garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi2Se3 depends linearly on the external magnetic field, while that in YIG/Bi2Se3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

We propose an intrinsic nonlinear spin magnetoelectric effect in magnetic materials, offering the potential of all-electric control of spin degree of freedom in centrosymmetric magnets, which reside outside of the current paradigm based on linear spin response. We reveal the band geometric origin of this effect in the momentum and magnetization space Berry connection polarizabilities, and clarify its symmetry characters. As an intrinsic effect, it is determined solely by the material's band structure and represents a material characteristic. Combining our theory with first-principles calculations, we predict sizable nonlinear spin magnetoelectricity in single-layer MnBi$_{2}$Te$_{4}$, which can be detected in experiment. Our theory paves the way for exploring rich nonlinear spintronic effects and novel device concepts based on them.