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2. Diodes 1 : Vertical Geometry Ga2O3 Rectifiers

Author

Yang, Jiancheng, Xian, Minghan, Elhassani, Randy, Ren, Fan, Pearton, S. J., Tadjer, Marko J., Kuramata, Akito, Hull, Robert, Series Editor, Jagadish, Chennupati, Series Editor, Kawazoe, Yoshiyuki, Series Editor, Kruzic, Jamie, Series Editor, Osgood, Richard M., Series Editor, Parisi, Jürgen, Series Editor, Pohl, Udo W., Series Editor, Seong, Tae-Yeon, Series Editor, Uchida, Shin-ichi, Series Editor, Wang, Zhiming M., Series Editor, Higashiwaki, Masataka, editor, and Fujita, Shizuo, editor

Published
2020
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3. Contributors

Author

Ahmad, Habib, primary, Aktas, Ozgur, additional, Ancona, M.G., additional, Anderson, Travis J., additional, Basceri, Cem, additional, Chang, Josephine, additional, Chatterjee, Bikramjit, additional, Cheng, Zhe, additional, Choi, Sukwon, additional, Cimalla, Volker, additional, Doolittle, W. Alan, additional, Feygelson, Tatyana I., additional, Foley, Brian, additional, Francis, Daniel, additional, Gaskins, John T., additional, Gerrer, Thomas, additional, Giri, Ashutosh, additional, Graham, Samuel, additional, Haque, Aman, additional, Heller, Eric, additional, Hobart, Karl D., additional, Holtz, Mark W., additional, Hopkins, Patrick E., additional, Howell, Robert, additional, Islam, Zahabul, additional, Komarov, Pavel L., additional, Kuball, Martin, additional, Law, Mark E., additional, Lindsay, Lucas, additional, Matioli, Elison, additional, Middleton, Callum, additional, Mishler, Codie, additional, Mock, Alyssa L., additional, Odnoblyudov, Vladimir, additional, Olson, David H., additional, Pate, Bradford B., additional, Pavlidis, Georges, additional, Pearton, S.J., additional, Piner, Edwin L., additional, Raad, Peter E., additional, Ren, Fan, additional, Sandy, Travis L., additional, Sharma, Ribhu, additional, Shi, Jingjing, additional, Shoemaker, Daniel, additional, Sood, Aditya, additional, Spencer, Joseph A., additional, Tadjer, Marko J., additional, Tomko, John A., additional, van Erp, Remco, additional, Wong, Hiu-Yung, additional, Xian, Minghan, additional, and Zhang, Yuhao, additional

Published
2022
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6. Diodes 1

Author

Yang, Jiancheng, primary, Xian, Minghan, additional, Elhassani, Randy, additional, Ren, Fan, additional, Pearton, S. J., additional, Tadjer, Marko J., additional, and Kuramata, Akito, additional

Published
2020
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7. 1 GeV proton damage in β-Ga2O3.

Author

Polyakov, A. Y., Shchemerov, I. V., Vasilev, A. A., Kochkova, A. I., Smirnov, N. B., Chernykh, A. V., Yakimov, E. B., Lagov, P. B., Pavlov, Yu. S., Ivanov, E. M., Gorbatkova, O. G., Drenin, A. S., Letovaltseva, M. E., Xian, Minghan, Ren, Fan, Kim, Jihyun, and Pearton, S. J.

Subjects
ELECTRON traps, DEEP level transient spectroscopy, PROTONS, OPTICAL spectroscopy, ELECTRIC transients, MONOCHROMATIC light
Abstract

The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence of 4 × 1013 cm−2 were studied. The carrier removal rates were ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irradiation at comparable fluences (5–10 × 1014 cm−2), the removal rate was ∼400 cm−1 for donor concentrations of 3 × 1016 cm−3 and ∼100 cm−1 for concentrations of <1016 cm−3. These removal rates were in stark contrast with modeling results that predicted the introduction rates of vacancies to be two orders of magnitude higher for 20 MeV protons. Measurements of deep electron and hole traps densities by deep level transient spectroscopy with electrical or optical injection (DLTS or ODLTS), and capacitance–voltage profiling under monochromatic light illumination showed that the 1 GeV proton irradiation resulted in the introduction of deep donors E2*(Ec-0.75 eV) and E3 (Ec-1 eV) and deep acceptors with optical ionization threshold near 2.3 eV producing a feature near 250 K in ODLTS and 3.1 eV with related ODLTS feature near 450 K. The total concentration of all deep traps was much lower than that necessary to explain the observed decrease in net donor density upon irradiation. The donor densities showed a nonuniform distribution in proton irradiated films with the concentration greatly decreased toward the surface. Possible reasons for the observed performance are discussed. [ABSTRACT FROM AUTHOR]

Published
2021
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11. Impact of electron injection on carrier transport and recombination in unintentionally doped GaN.

Author

Modak, Sushrut, Chernyak, Leonid, Xian, Minghan, Ren, Fan, Pearton, Stephen J., Khodorov, Sergey, Lubomirsky, Igor, Ruzin, Arie, and Dashevsky, Zinovi

Subjects
ELECTRONS, ELECTRON diffusion, CATHODOLUMINESCENCE, CHARGE injection, DIFFUSION
Abstract

The impact of electron injection on minority carrier (hole) diffusion length and lifetime at variable temperatures was studied using electron beam-induced current, continuous, and time-resolved cathodoluminescence techniques. The hole diffusion length increased from 306 nm to 347 nm with an electron injection charge density up to 117.5 nC/μm3, corresponding to the lifetime changing from 77 ps to 101 ps. Elongation of the diffusion length was attributed to the increase in the non-equilibrium carrier lifetime, which was determined using ultrafast time-resolved cathodoluminescence and related to non-equilibrium carrier trapping on gallium vacancy levels in the GaN forbidden gap. [ABSTRACT FROM AUTHOR]

Published
2020
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12. Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74.

Author

Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, Martha R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, and Pearton, S. J.

Subjects
*EPITAXY, *ANNEALING of metals, *PULSED laser deposition, *VALENCE fluctuations, *LASER deposition, *VALENCE bands
Abstract

Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 − x)2O3 (where x = 0.25–0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from −0.38 eV for (In0.25Ga0.75)2O3 to −1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample. [ABSTRACT FROM AUTHOR]

Published
2020
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13. Impact of neutron irradiation on electronic carrier transport properties in Ga2O3 and comparison with proton irradiation effects.

Author

Lee, Jonathan, Silverman, Andrew C., Flitsiyan, Elena, Xian, Minghan, Ren, Fan, and Pearton, S. J.

Subjects
NEUTRON irradiation, WIDE gap semiconductors, THRESHOLD energy, NEUTRON temperature, CHARGE carriers, PROTONS
Abstract

The minority charge carrier transport in beta gallium oxide ( β -Ga2O3) before and after exposure to neutrons from a 241Am-Be source was studied. Cathodoluminescence (CL) spectroscopy and current–voltage (I-V) characteristics were used to study minority carrier behavior. High energy radiation affects minority carrier properties through the production of carrier traps that reduce the conductivity and mobility of the material. In this paper, we report the effects of neutron radiation in silicon-doped β -Ga2O3, using rectifiers or transistors as the measurement platform. The thermal activation energy of the reference (non-irradiated) sample was 40.9 meV, which is ascribed to silicon-donors. CL measurements indicate a slightly indirect bandgap energy of 4.9 eV. Neutrons create disordered regions in β -Ga2O3 rather than just point defects, resulting in the lowest carrier removal rate because of the lowest average non-ionizing energy loss. The neutron irradiation caused an increase in reverse bias leakage current in rectifiers and a carrier removal rate of 480 cm−1 but had little effect on reverse recovery switching time. Differences in CL spectra were observed between vertical and lateral device structures, emphasizing the importance of impurities and defects in the starting material. The neutron energies in the Am-Be source range up to 11 MeV, with an average energy between 4 and 5 MeV (Figure 1). We also contrasted neutron damage with the effects of irradiation with 10 MeV protons. Under 10 MeV proton irradiation, the thermal activation energies increase. This is attributable to high order defects and their influence on carrier lifetimes. The measurements show that β -Ga2O3 is more resistant to radiation damage than other wide bandgap semiconductors due to its higher displacement threshold energy, which is inversely proportional to the lattice constant. [ABSTRACT FROM AUTHOR]

Published
2023
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15. Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform

Author

Chiu, Chan-Wen, primary, Xian, Minghan, additional, Stephany, Jenna L., additional, Xia, Xinyi, additional, Chiang, Chao-Ching, additional, Ren, Fan, additional, Tsai, Cheng-Tse, additional, Shan, Siang-Sin, additional, Liao, Yu-Te, additional, Esquivel-Upshaw, Josephine F., additional, Rananaware, Santosh R., additional, Nguyen, Long T., additional, Macaluso, Nicolas C., additional, Jain, Piyush K., additional, Cash, Melanie N., additional, Mavian, Carla N., additional, Salemi, Marco, additional, Leon, Marino E., additional, Chang, Chin-Wei, additional, Lin, Jenshan, additional, and Pearton, Stephen J., additional

Published
2022
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19. 1 GeV proton damage in β-Ga2O3

Author

Polyakov, A. Y., primary, Shchemerov, I. V., additional, Vasilev, A. A., additional, Kochkova, A. I., additional, Smirnov, N. B., additional, Chernykh, A. V., additional, Yakimov, E. B., additional, Lagov, P. B., additional, Pavlov, Yu. S., additional, Ivanov, E. M., additional, Gorbatkova, O. G., additional, Drenin, A. S., additional, Letovaltseva, M. E., additional, Xian, Minghan, additional, Ren, Fan, additional, Kim, Jihyun, additional, and Pearton, S. J., additional

Published
2021
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23. Rapid Sars-Cov-2 Virus Detection Using Modular Transistor-Based Biosensor Platform with Disposable Test Strips

Author

Xian, Minghan, primary, Luo, Hao, additional, Xia, Xinyi, additional, Fares, Chaker, additional, Carey, Patrick, additional, Ren, Fan, additional, Shan, Siang-Sin, additional, Liao, Yu-Te, additional, Esquivel-Upshaw, Josephine F, additional, Lin, Jenshan, additional, Ghivizzani, Steven C, additional, and Pearton, Stephen J, additional

Published
2021
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32. Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform

Author

Xian, Minghan, primary, Luo, Hao, additional, Xia, Xinyi, additional, Fares, Chaker, additional, Carey, Patrick H., additional, Chiu, Chan-Wen, additional, Ren, Fan, additional, Shan, Siang-Sin, additional, Liao, Yu-Te, additional, Hsu, Shu-Min, additional, Esquivel-Upshaw, Josephine F., additional, Chang, Chin-Wei, additional, Lin, Jenshan, additional, Ghivizzani, Steven C., additional, and Pearton, Stephen J., additional

Published
2021
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33. Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

Author

Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, and Pearton, S.J.

Subjects
ddc:530, Band alignment, ALD SiO2, (Inx Ga1−x )2 O3
Abstract

The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with

Published
2020

43. Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3

Author

Polyakov, A Y, primary, Smirnov, N B, additional, Shchemerov, I V, additional, Vasilev, A A, additional, Yakimov, E B, additional, Chernykh, A V, additional, Kochkova, A I, additional, Lagov, P B, additional, Pavlov, Yu S, additional, Kukharchuk, O F, additional, Suvorov, A A, additional, Garanin, N S, additional, Lee, In-Hwan, additional, Xian, Minghan, additional, Ren, Fan, additional, and Pearton, S J, additional

Published
2020
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49. Temperature dependence of cathodoluminescence emission in irradiated Si-doped β-Ga2O3.

Author

Modak, Sushrut, Chernyak, Leonid, Schulte, Alfons, Xian, Minghan, Ren, Fan, Pearton, Stephen J., Ruzin, Arie, Kosolobov, Sergey S., and Drachev, Vladimir P.

Subjects
CATHODOLUMINESCENCE, ALPHA rays, TIME-resolved measurements, TEMPERATURE, LUMINESCENCE measurement, ACTIVATION energy, LUMINESCENCE
Abstract

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process. [ABSTRACT FROM AUTHOR]

Published
2021
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50. Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers.

Author

Xia, Xinyi, Xian, Minghan, Fares, Chaker, Sharma, Ribhu, Law, Mark E., Ren, Fan, and Pearton, Stephen J.

Subjects
BREAKDOWN voltage, ION implantation, COMPUTER-aided design, EDGES (Geometry), GEOMETRY, ION mobility
Abstract

N+ ion implantation to form resistive regions for edge termination at the anode contact periphery was used to maximize the breakdown voltage (VB) of vertical geometry β-Ga2O3 rectifiers. The design was examined via simulations using the Florida object oriented device and process Technology Computer-Aided Design (TCAD) simulator. The configuration of the implanted region was investigated with these simulations and then implemented experimentally. Significant increases of ∼200%–250% in VB were achieved for 50–1000 μm diameter rectifiers with an unbounded resistive region and an implantation depth of ∼0.5 μm. The on-state resistance and on/off ratios of the rectifiers were essentially unchanged by the addition of the implanted regions. An optimized implanted edge termination structure maximizes the breakdown voltage with no associated increase in device resistance in vertical geometry Ga2O3 rectifiers. [ABSTRACT FROM AUTHOR]

Published
2021
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