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Your search keyword '"Xia Xian-Hai"' showing total 5 results
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5 results on '"Xia Xian-Hai"'

2. Spirocyclic Aromatic Hydrocarbon-Based Organic Nanosheets for Eco-Friendly Aqueous Processed Thin-Film Non-Volatile Memory Devices (Adv. Mater. 27/2013)

Author

Lin, Zong-Qiong, primary, Liang, Jin, additional, Sun, Peng-Ju, additional, Liu, Feng, additional, Tay, Yee-Yan, additional, Yi, Ming-Dong, additional, Peng, Kun, additional, Xia, Xian-Hai, additional, Xie, Ling-Hai, additional, Zhou, Xin-Hui, additional, Zhao, Jian-Feng, additional, and Huang, Wei, additional

Published
2013
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4. Unipolar Resistive Switching Effects Based on Al/ZnO/P ++ -Si Diodes for Nonvolatile Memory Applications

Author

Huang Wei, Shi Wei, Wang Lianhui, Wei Ang, Yi Mingdong, Xia Xian-Hai, Fan Qu-li, Xie Ling-Hai, and Tai Qiang

Subjects
Materials science, Silicon, business.industry, Annealing (metallurgy), General Physics and Astronomy, chemistry.chemical_element, Non-volatile memory, Surface coating, chemistry, Electrical resistivity and conductivity, Optoelectronics, Electric potential, Thin film, business, Diode
Abstract

Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104–105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices.

Published
2012
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5. Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications.

Author

Shi Wei, Tai Qiang, Xia Xian-Hai, Yi Ming-Dong, Xie Ling-Hai, Fan Qu-Li, Wang Lian-Hui, Wei Ang, and Huang Wei

Subjects
ZINC oxide, NONVOLATILE memory, SEMICONDUCTOR diodes, ELECTROFORMING, ANNEALING of metals, POTENTIAL theory (Physics)
Abstract

Al/ZnO/P++-Si diodes exhibit typical unipolar resistive switching behaviors. The electroforming-free characteristics are observed after annealing the ZnO thin film at 400°C in air. The ON/OFF ratios of the resistance are in the range of 104-105 at a very low operation voltage of 0.1 V, and the devices show good endurance characteristics of over 400 cycles with negligible reduction. Finally, the memory mechanisms of the diodes are proposed on the basis of the current-voltage and resistance-voltage results. These results indicate that Al/ZnO/P++-Si devices have potential applications in nonvolatile memory devices [ABSTRACT FROM AUTHOR]

Published
2012
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