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Employing aberration-corrected scanning transmission electron microscopy (STEM), we meticulously investigated the intrinsic chemical heterogeneity of Fe1+yTe, Fe1+yTe0.8Se0.2, and Fe1+yTe0.5Se0.5. Comprehensive analysis reveals the presence of interstitial iron atoms (Feint) across all samples, pre-dominantly occupying the 2c site of the P4/nmm space group. Moreover, a superstructure phase characterized by a wave vector q = 2/5a + 1/2c, originating from the ordering of Feint, is distinctly observable in the parent compound Fe1+yTe. In this scenario, the Feint atoms interact with adjacent Fe atoms, forming iron polycomplex and leading to an evident distortion of the FeTe4 tetrahedral. Experimental results further demonstrate effective suppression of Feint concentration and ordering through appropriate Se substitution; notably, Fe1+yTe0.5Se0.5 manifests the lowest concentration of Feint atoms. Our findings additionally indicate that Se substitution is random, and nanoscale phase separation induced by Te/Se chemical heterogeneity is commonly observed within Fe1+yTe1-xSex crystals., Comment: 14 pages, 5 figures

Topological Dirac nodal-line semimetals host topologically nontrivial electronic structure with nodal-line crossings around the Fermi level, which could affect the photocarrier dynamics and lead to novel relaxation mechanisms. Herein, by using time- and angle-resolved photoemission spectroscopy, we reveal the previously-inaccessible linear dispersions of the bulk conduction bands above the Fermi level in a Dirac nodal-line semimetal PtSn$_4$, as well as the momentum and temporal evolution of the gapless nodal lines. A surprisingly ultrafast relaxation dynamics within a few hundred femtoseconds is revealed for photoexcited carriers in the nodal line. Theoretical calculations suggest that such ultrafast carrier relaxation is attributed to the multichannel scatterings among the complex metallic bands of PtSn$_4$ via electron-phonon coupling. In addition, a unique dynamic relaxation mechanism contributed by the highly anisotropic Dirac nodal-line electronic structure is also identified. Our work provides a comprehensive understanding of the ultrafast carrier dynamics in a Dirac nodal-line semimetal.

We have performed electrochemical treatment of the van der Waals antiferromagnetic materials FePS$_3$ and NiPS$_3$ with the ionic liquid EMIM-BF$_4$, achieving significant molecular intercalation. Mass analysis of the intercalated compounds, EMIM$_x$-FePS$_3$ and EMIM$_x$-NiPS$_3$, indicated respective intercalation levels, $x$, of approximately 27\% and 37\%, and X-ray diffraction measurements demonstrated a massive (over 50\%) enhancement of the $c$-axis lattice parameters. To investigate the consequences of these changes for the magnetic properties, we performed magnetic susceptibility and $^{31}$P nuclear magnetic resonance (NMR) studies of both systems. For EMIM$_x$-FePS$_3$, intercalation reduces the magnetic ordering temperature from $T_N = 120$~K to 78~K, and we find a spin gap in the antiferromagnetic phase that drops from 45~K to 30~K. For EMIM$_x$-NiPS$_3$, the ordering temperature is almost unaffected (changing from 148~K to 145~K), but a change towards nearly isotropic spin fluctuations suggests an alteration of the magnetic Hamiltonian. Such relatively modest changes, given that the huge extension of the $c$ axes is expected to cause a very strong suppression any interlayer interactions, point unequivocally to the conclusion that the magnetic properties of both parent compounds are determined solely by two-dimensional (2D), intralayer physics. The changes in transition temperatures and low-temperature spin dynamics in both compounds therefore indicate that intercalation also results in a significant modulation of the intralayer magnetic interactions, which we propose is due to charge doping and localization on the P sites. Our study offers chemical intercalation with ionic liquids as an effective method to control not only the interlayer but also the intralayer interactions in quasi-2D magnetic materials.

Structural investigations conducted using transmission electron microscopy (TEM) on LuH2 synthesized under atmospheric pressure (AP-LuH2) and nitrogen-doped LuH2 synthesized under high pressure (HP-LuH2) have revealed numerous microstructural phenomena. Both materials show a clear superstructure modulation with wave vector, q^* = 1/4 (2-20), and this modulation can be well interpreted by the displacements of Lu atoms. Further investigations on the nitrogen-doped HP-LuH2 materials reveal the appearance of high-density antiphase boundaries, in particular, domain walls of a few atomic layer thickness without structural modulation can be observed, suggesting possible interface properties could be detected in this system. In-situ TEM observations of AP-LuH2 suggest that no evident structural phase transition occurs between 94 K and 673 K., Comment: 8 pages, 7 figures

Superconductivity becomes more interesting when it encounters dimensional constraint or topology, because it is of importance for exploring exotic quantum phenomena or developing superconducting electronics. Here we report the coexistence of naturally formed surface superconducting state and three-dimensional topological Dirac state in single crystals of BaMg$_2$Bi$_2$. The electronic structure obtained from the first-principles calculations demonstrates that BaMg$_2$Bi$_2$ is an ideal Dirac material, in which the Dirac point is very close to the Fermi level and no other energy band crosses the Fermi level. Superconductivity up to 4.77 K can be observed under ambient pressure in the measurements of resistivity. The angle dependent magnetoresistance reveals the two-dimensional characteristic of superconductivity, indicating that superconductivity occurs on the surface of the sample and is absent in the bulk state. Our study not only provides BaMg$_2$Bi$_2$ as a suitable platform to study the interplay between superconductivity and topological Dirac state, but also indicates that MgBi-based materials may be a promising system for exploring new superconductors.

High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents $ \beta=0.336 \pm 0.001 $ with a critical temperature $ T_{c}=300.29 \pm 0.01 $ K and $ \gamma=1.193 \pm 0.003 $ with $ T_{c} = 300.15 \pm 0.05 $ K are obtained by the modified Arrott plot, whereas $ \delta = 4.61 \pm 0.03 $ is deduced by a critical isotherm analysis at $ T_{c} = 300 $ K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn$ _{5}$Ge$_{3}$ exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as $ J(r)\approx r^{-4.855} $ and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn$ _{5} $Ge$ _{3} $ results in a small deviation of obtained critical exponents from those for standard 3D-Ising model., Comment: 8 pages, 6 figures. arXiv admin note: substantial text overlap with arXiv:1803.05905 by other authors

We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resistivity in PdGa shows weak anisotropy with twofold or threefold symmetry when the magnetic field rotates within the (1$\bar{1}$0) or (111) plane perpendicular to the current. Nine or three frequencies are extracted after the fast Fourier-transform analysis (FFT) of the dHvA oscillations with B//[001] or B//[011], respectively, which is confirmed to be consistent with the Fermi surfaces (FSs) obtained from first-principles calculations with spin-orbit coupling (SOC) considered., Comment: 8 pages, 7 figures

We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T$_{t1}\sim$ 38.3 K and T$_{t2}\sim$ 24.3 K. Once the magnetic field is applied, another transition T$_{t3}\sim$ 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within H$_{t1}\sim\pm$ 6.9 T is observed, which decreases with increasing temperature and eventually disappears at T$_{t2}$. Besides, Co$_{0.29}$TaS$_{2}$ displays step-like behavior as another magnetic transition around H$_{t2}\sim\pm$ 4 T, which exists until $\sim$ T$_{t1}$. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co$_{0.29}$TaS$_{2}$, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of R$_{s}$/R$_{0}\sim 10^{5}$, considering that the tiny net magnetization (0.0094$\mu_{B}$/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within H$_{t1}$. The abrupt change at H$_{t2}$ below T$_{t1}$, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co$_{0.29}$TaS$_{2}$., Comment: 5 pages,4 figures

Revealing the ultrafast dynamics of three-dimensional (3D) Dirac fermions upon photoexcitation is critical for both fundamental science and device applications. So far, how the cooling of 3D Dirac fermions differs from that of two-dimensional (2D) Dirac fermions and whether there is population inversion are fundamental questions that remain to be answered. Here we reveal the ultrafast dynamics of Dirac fermions in a model 3D Dirac semimetal Cd$_3$As$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy (TrARPES) with a tunable probe photon energy from 5.3 - 6.9 eV. The energy- and momentum-resolved relaxation rate shows a linear dependence on the energy, suggesting Dirac fermion cooling through intraband relaxation. Moreover, a population inversion is reported based on the observation of accumulated photoexcited carriers in the conduction band with a lifetime of $\tau_n$ = 3.0 ps. Our work provides direct experimental evidence for a long-lived population inversion in a 3D Dirac semimetal, which is in contrast to 2D graphene where the interband relaxation occurs on a much faster timescale.

MnBi$_8$Te$_{13}$ is an intrinsic ferromagnetic (FM) topological insulator with different complex surface terminations. Resolving the electronic structures of different termination surfaces and manipulation of the electronic state are important. Here, by using micrometer spot time- and angle-resolved photoemission spectroscopy ($\mu$-TrARPES), we resolve the electronic structures and reveal the ultrafast dynamics upon photoexcitation. Photoinduced filling of the surface state hybridization gap is observed for the Bi$_2$Te$_3$ quintuple layer directly above MnBi$_2$Te$_4$ accompanied by a nontrivial shift of the surface state, suggesting light-tunable interlayer interaction. Relaxation of photoexcited electrons and holes is observed within 1-2 ps. Our work reveals photoexcitation as a potential control knob for tailoring the interlayer interaction and surface state of MnBi$_8$Te$_{13}$.

The interplay between time-reversal symmetry (TRS) and band topology plays a crucial role in topological states of quantum matter. In time-reversal-invariant (TRI) systems, the inversion of spin-degenerate bands with opposite parity leads to nontrivial topological states, such as topological insulators and Dirac semimetals. When the TRS is broken, the exchange field induces spin splitting of the bands. The inversion of a pair of spin-splitting subbands can generate more exotic topological states, such as quantum anomalous Hall insulators and magnetic Weyl semimetals. So far, such topological phase transitions driven by the TRS breaking have not been visualized. In this work, using angle-resolved photoemission spectroscopy, we have demonstrated that the TRS breaking induces a band inversion of a pair of spin-splitting subbands at the TRI points of Brillouin zone in EuB$_6$, when a long-range ferromagnetic order is developed. The dramatic changes in the electronic structure result in a topological phase transition from a TRI ordinary insulator state to a TRS-broken topological semimetal (TSM) state. Remarkably, the magnetic TSM state has an ideal electronic structure, in which the band crossings are located at the Fermi level without any interference from other bands. Our findings not only reveal the topological phase transition driven by the TRS breaking, but also provide an excellent platform to explore novel physical behavior in the magnetic topological states of quantum matter., Comment: 22 pages, 7 figures, accepted by Phys. Rev. X

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

We report the magnetoresistance(MR), de Haas-van Alphen (dHvA) oscillations and the electronic structures of single crystal PtGa. The large unsaturated MR is observed with the magnetic field B//[111]. Evident dHvA oscillations with B//[001] configuration have been observed, from which twelve fundamental frequencies are extracted and the spin-orbit coupling effect (SOC) induced band splitting is revealed. The light cyclotron effective masses are extracted from the fitting by the thermal damping term of the Lifshitz-Kosevich (LK) formula. Combining with the calculated frequencies from the first-principles calculations, the dHvA frequencies F$_1$/F$_3$ and F$_{11}$/F$_{12}$ are confirmed to originate from the electron pockets at $\Gamma$ and R, respectively. The first-principles calculations also reveal the existence of spin-3/2 RSW fermion and time-reversal (TR) doubling of the spin-1 excitation at $\Gamma$ and R with large Chern number $\pm4$ when SOC is included., Comment: 5 pages, 4 figures

We report the doping effects of cobalt on van der Waals (vdW) magnet Fe$_5$GeTe$_2$. A series of (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ (0$\leq$x$\leq$0.44) single crystals have been successfully grown, their structural, magnetic and transport properties are investigated. For x=0.20, The Curie temperature $T_C$ increases from 276~K to 337~K. Moreover, the magnetic easy-axis is reoriented to the $ab$-plane from the $c$-axis in undoped Fe$_5$GeTe$_2$ with largely enhanced magnetic anisotropy. These magnetic properties would make (Fe$_{0.8}$Co$_{0.2}$)$_5$GeTe$_2$ more effective in stabilizing magnetic order in the two-dimensional limit. A complex magnetic phase diagram is identified on the higher doping side. The x=0.44 crystal first orders ferromagnetically at $T_C$=363~K then undergoes an antiferromagnetic transition at $T_N$=335~K. Furthermore magnetic-field-induced spin-flop transitions are observed for the AFM ground state. Our work reveals (Fe$_{1-x}$Co$_x$)$_5$GeTe$_2$ as promising candidates for developing new spin-related applications and proposes a method to engineer the magnetic properties of vdW magnet., Comment: 5 pages, 5 figures

We report the magnetoresistance, Hall effect, de Haas-van Alphen (dHvA) oscillations and the electronic structures of single crystal RhSn, which is a typical material of CoSi family holding a large Chern number. The large unsaturated magnetoresistance is observed with B//[001]. The Hall resistivity curve indicates that RhSn is a multi-band system with high mobility. Evident quantum oscillations have been observed, from which the light effective masses are extracted. Ten fundamental frequencies are extracted after the fast Fourier transform analysis of the dHvA oscillations with B//[001] configuration. The two low frequencies F$_1$ and F$_2$ do not change obviously and the two high frequencies F$_9$ and F$_{10}$ evolve into four when B rotates from B//[001] to B//[110], which is consistent with the band structure in the first-principles calculations with spin-orbit coupling (SOC). The extracted Berry phases of the relative pockets show a good agreement with the Chern number $\pm4$ (with SOC) in the first-principles calculations. Above all, our studies indicate that RhSn is an ideal platform to study the unconventional chiral fermions and the surface states., Comment: 6 pages, 7 figures, accepted by Physical Review B

In materials chiral fermions such as Weyl fermions are characterized by nonzero chiral charges, which are singular points of Berry curvature in momentum space. Recently, new types of chiral fermions beyond Weyl fermions have been discovered in structurally chiral crystals CoSi, RhSi and PtAl. Here, we have synthesized RhSn single crystals, which have opposite structural chirality to the CoSi crystals we previously studied. Using angle-resolved photoemission spectroscopy, we show that the bulk electronic structures of RhSn are consistent with the band calculations and observe evident surface Fermi arcs and helical surface bands, confirming the existence of chiral fermions in RhSn. It is noteworthy that the helical surface bands of the RhSn and CoSi crystals have opposite handedness, meaning that the chiral fermions are reversed in the crystals of opposite structural chirality. Our discovery establishes a direct connection between chiral fermions in momentum space and chiral lattices in real space., Comment: 18 pages, 4 figures

We present experimental evidence of an intriguing phase transition between distinct topological states in the type-II Weyl semimetal MoTe2. We observe anomalies in the Raman phonon frequencies and linewidths as well as electronic quasielastic peaks around 70 K, which, together with structural, thermodynamic measurements, and electron-phonon coupling calculations, demonstrate a temperature-induced transition between two topological phases previously identified by contrasting spectroscopic measurements. An analysis of experimental data suggests electron-phonon coupling as the main driving mechanism for the change of key topological characters in the electronic structure of MoTe2.We also find the phase transition to be sensitive to sample conditions distinguished by synthesis methods. These discoveries of temperature and material condition-dependent topological phase evolutions and transitions in MoTe2 advance the fundamental understanding of the underlying physics and enable an effective approach to tuning Weyl semimetal states for technological applications., Comment: 6 pages, 4 figures

Quantum limit is quite easy to achieve once the band crossing exists exactly at the Fermi level ($E_F$) in topological semimetals. In multilayered Dirac fermion system, the density of Dirac fermions on the zeroth Landau levels (LLs) increases in proportion to the magnetic field, resulting in intriguing angle- and field-dependent interlayer tunneling conductivity near the quantum limit. BaGa$_2$ is an example of multilayered Dirac semimetal with anisotropic Dirac cone close to $E_F$, providing a good platform to study its interlayer transport properties. In this paper, we report the negative interlayer magnetoresistance (NIMR, I//c and B//c) induced by the tunneling of Dirac fermions on the zeroth LLs of neighbouring Ga layers in BaGa$_2$. When the field deviates from the c-axis, the interlayer resistivity $\rho_{zz}(\theta)$ increases and finally results in a peak with the field perpendicular to the c-axis. These unusual interlayer transport properties (NIMR and resistivity peak with B$\perp$c) are observed together for the first time in Dirac semimetal under ambient pressure and are well explained by the model of tunneling between Dirac fermions in the quantum limit., Comment: 12 pages, 8 figures, with supplementary materials

We report the effects of cobalt doping on the magnetic properties of two-dimensional van der Waals ferromagnet Fe3GeTe2. Single crystals of (Fe{1-x}Cox)3GeTe2 with x=0-0.78 were successfully synthesized and characterized with x-ray diffraction, energy dispersive x-ray spectroscopy and magnetization measurements. Both the Curie-Weiss temperature and ferromagnetic (FM) ordered moment of Fe3GeTe2 are gradually suppressed upon Co doping. A kink in zero-field-cooling low field M(T) curve which is previously explained as an antiferromagnetic transition is observed for samples with x=0-0.58. Our detailed magnetization measurements and theoretical calculations strongly suggest that this kink is originated from the pinning of magnetic domain walls. The domain pinning effects are suddenly enhanced when the doping concentration of cobalt is around 50%, both the coercive field Hc and the magnetic remanence to saturated magnetization ratio MR/MS are largely improved and a hard magnetic phase emerges in bulk single crystal samples. The strong doping dependent magnetic properties suggest more spintronic applications of Fe3GeTe2., Comment: 6 pages, 4 figures, accepted by PRB

We report an investigation of the structural, magnetic and electronic properties of Ba(Fe(1-x)V(x))2As2 using x-ray, transport, magnetic susceptibility and neutron scattering measurements. The vanadium substitutions in Fe sites are possible up to 40\%. Hall effect measurements indicate strong hole-doping effect through V doping, while no superconductivity is observed in all samples down to 2K. The antiferromagnetic and structural transition temperature of BaFe2As2 is gradually suppressed to finite temperature then vanishes at x=0.245 with the emergence of spin glass behavior, suggesting an avoided quantum critical point (QCP). Our results demonstrate that the avoided QCP and spin glass state which were previously reported in the superconducting phase of Co/Ni-doped BaFe2As2 can also be realized in non-superconducting Ba(Fe(1-x)V(x))2As2., Comment: 5 pages, 6 figures

We report the synthesis and magneto-transport measurements on the single crystal of Dirac semimetal PdTe$_2$. The de Haas-van Alphen oscillations with multiple frequencies have been clearly observed, from which the small effective masses and nontrivial Berry phase are extracted, implying the possible existence of the Dirac fermions in PdTe$_2$. The planar Hall effect and anisotropic longitudinal resistivity originating from the chiral anomaly and nontrivial Berry phase are observed, providing strong evidence for the nontrivial properties in PdTe$_2$. With the increase of temperature up to 150 K, planar Hall effect still remains. The possible origin of mismatch between experimental results and theoretical predictions is also discussed., Comment: 4 pages, two column

We report the magneto-transport properties of CaAl$_4$ single crystals with $C2/m$ structure at low temperature. CaAl$_4$ exhibits large unsaturated magnetoresistance $\sim$3000$\%$ at 2.5 K and 14 T. The nonlinear Hall resistivity is observed, which indicates the multi-band feature. The first-principles calculations show the electron-hole compensation and the complex Fermi surface in CaAl$_4$, to which the two-band model with over-simplified carrier mobility can't completely apply. Evident quantum oscillations have been observed with B//c and B//ab configurations, from which the nontrivial Berry phase is extracted by the multi-band Lifshitz-Kosevich formula fitting. An electron-type quasi-2D Fermi surface is found by the angle-dependent Shubnikov-de Haas oscillations, de Haas-van Alphen oscillations and the first-principles calculations. The calculations also elucidate that CaAl$_4$ owns a Dirac nodal line type band structure around the $\Gamma$ point in the $Z$-$\Gamma$-$L$ plane, which is protected by the mirror symmetry as well as the space inversion and time reversal symmetries. Once the spin-orbit coupling is included, the crossed nodal line opens a negligible gap (less than 3 meV). The open-orbit topology is also found in the electron-type Fermi surfaces, which is believed to help enhance the magnetoresistance observed., Comment: 6 pages, two column

We report the magnetotransport properties of HoSb, a semimetal with antiferromagnetic ground state. HoSb shows extremely large magnetoresistance (XMR) and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Different from previous reports in other rare earth monopnictides, kinks in $\rho(B)$ and $\rho_{xy}(B)$ curves and the field dependent resistivity plateau are observed in HoSb, which result from the magnetic phase transitions. The fast Fourier transform analysis of the SdH oscillation reveals the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction. The Berry phase extracted from SdH oscillation indicates the possible nontrivial electronic structure of HoSb in the presence of magnetic field. The Hall measurements suggest that the XMR originates from the electron-hole compensation and high mobility., Comment: 7 pages, 5 figures

We report the magneto-transport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at $X$ point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility., Comment: 6 pages, 5 figures

We report the magneto-transport properties and electronic structures of BaZnBi$_2$. BaZnBi$_2$ is a quasi-two-dimensional (2D) material with metallic behavior. The transverse magnetoresistance (MR) depends on magnetic field linearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperature and high field. The observed linear MR may originate from the disorder in samples or the edge conductivity in compensated two-component systems. The first-principles calculations reveal the absence of stable gapless Dirac fermion. Combining with the trivial Berry phase extracted from SdH oscillation, BaZnBi$_2$ is suggested to be a topologically trivial semimetal. Nearly compensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist in BaZnBi$_2$., Comment: 6 pages, 6 figures

Dirac semimetals (DSMs), which host Dirac fermions and represent new state of quantum matter, have been studied intensively in condensed matter physics. The exploration of new materials with topological states is im- portant in both physics and materials science. In this article, we report the synthesis and the transport properties of high quality single crystals of YbMnSb$_2$. YbMnSb$_2$ is a new compound with metallic behavior. Quantum oscillations, including Shubnikov-de Haas (SdH) oscillation and de Haas-van Alphen (dHvA) type oscillation, have been observed at low temperature and high magnetic field. Small effective masses and nontrivial Berry phase are extracted from the analyses of quantum oscillations, which provide the transport evidence for the possible existence of Dirac fermions in YbMnSb$_2$. The measurements of angular-dependent interlayer magnetoresistance (MR) indicate the interlayer transport is coherent. The Fermi surface (FS) of YbMnSb$_2$ possesses quasi-two dimensional (2D) characteristic as determined by the angular dependence of SdH oscillation frequency. These findings suggest that YbMnSb$_2$ is a new candidate of topological Dirac semimetal., Comment: 6 pages, 5 figures, two column

Dirac materials exhibit intriguing low-energy carrier dynamics that offer a fertile ground for novel physics discovery. Of particular interest is the interplay of Dirac carriers with other quantum phenomena, such as magnetism. Here we report on a two-magnon Raman scattering study of AMnBi2 (A=Ca, Sr), a prototypical magnetic Dirac system comprising alternating Dirac-carrier and magnetic layers. We present the first accurate determination of the exchange energies in these compounds and, by comparison to the reference compound BaMn2Bi2, we show that the Dirac-carrier layers in AMnBi2 significantly enhance the exchange coupling between the magnetic layers, which in turn drives a charge-gap opening along the Dirac locus. Our findings break new grounds in unveiling the fundamental physics of magnetic Dirac materials, which offer a novel platform for probing a distinct type of spin-Fermion interaction. The outstanding properties of these materials allow a delicate manipulation of the interaction between the Dirac carriers and magnetic moments, thus holding great promise for applications in magnetic Dirac devices.

YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field, finally resulting in a metal-to-insulator-like transition. With temperature further decreased, a resistivity plateau emerges after the insulator-like regime. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large (3.47 $\times 10^4\%$ ). In addition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. Periodic behavior of the oscillation amplitude reveals the related information about Fermi surface and two major oscillation frequencies can be obtained from the FFT spectra of the oscillations. The trivial Berry phase extracted from SdH oscillation, band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material., Comment: 6 pages, 7 figures

We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of magnetization displays behavior that is different from CaMnBi2 or SrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2. Angle-dependent magnetoresistance reveals the quasi-two-dimensional Fermi surface. A crossover from semiclassical MR-H2 dependence in low field to MR-H dependence in high field is observed in transverse magnetoresistance. Our results indicate the anisotropic Dirac fermion states in BaMnBi2., Comment: 4 pages, 3 figures

A fast and furnace-free method of combustion synthesis is employed for the first time to synthesize iron-based superconductors. Using this method, Fe1.1Se1-xTex (0<=x<=1) samples can be prepared from self-sustained reactions of element powders in only tens of seconds. The obtained Fe1.1Se1-xTex samples show clear zero resistivity and corresponding magnetic susceptibility drop at around 10-14 K. The Fe1.1Se0.33Te0.67 sample shows the highest onset Tc of about 14 K, and its upper critical field is estimated to be approximately 54 T. Compared with conventional solid state reaction for preparing polycrystalline FeSe samples, combustion synthesis exhibits much-reduced time and energy consumption, but offers comparable superconducting properties. It is expected that the combustion synthesis method is available for preparing plenty of iron-based superconductors, and in this direction further related work is in progress., Comment: 20 pages, 6 figures

In topological insulators (TIs), metallic surface conductance saturates the insulating bulk resistance with de- creasing temperature, resulting in resistivity plateau at low temperatures as a transport signature originating from metallic surface modes protected by time reversal symmetry (TRS). Such characteristic has been found in several materials including Bi2Te2Se, SmB6 etc. Recently, similar behavior has been observed in metallic com- pound LaSb, accompanying an extremely large magetoresistance (XMR). Shubnikov-de Hass (SdH) oscillation at low temperatures further confirms the metallic behavior of plateau region under magnetic fields. LaSb[1] has been proposed by the authors as a possible topological semimetal (TSM), while negative magnetoresistance is absent at this moment. Here, high quality single crystals of NbAs2/TaAs2 with inversion symmetry have been grown and the resistivity under magnetic field is systematically investigated. Both of them exhibit metallic behavior under zero magnetic field, and a metal-to-insulator transition occurs when a nonzero magnetic field is applied, resulting in XMR (1.0*105% for NbAs2 and 7.3*105% for TaAs2 at 2.5 K & 14 T). With tempera- ture decreased, a resistivity plateau emerges after the insulator-like regime and SdH oscillation has also been observed in NbAs2 and TaAs2., Comment: 5 pages, double column, 5figures

The polarized Raman scattering spectra of nonsuperconducting $\alpha$-FeTe and of the newly discovered, As-free superconductor Fe$_{1.03}$Se$_{0.3}$Te$_{0.7}$ are measured at room temperature on single crystals. The phonon modes are assigned by combining symmetry analysis with first-principles calculations. In the parent compound $\alpha$-FeTe, the A$_{1g}$ mode of the Te atom and the B$_{1g}$ mode of the Fe atom are observed clearly, while in superconducting Fe$_{1.03}$Se$_{0.3}$Te$_{0.7}$, only a softened Fe B$_{1g}$ mode can be seen. No electron-phonon coupling feature can be distinguished in the spectra of the two samples. By contrast, the spectra of the superconducting system show a slight enhancement below 300$cm^{-1}$, which may be of electronic origin., Comment: 4 pages, 2 tables, 3 figures