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A series of Ce3+, Tb3+ or Ce3+/Tb3+ doped YAl3(BO3)4 phosphors are synthesized by a high temperature solid-state reaction, and their luminescent properties are investigated. YAl3(BO3)4:Ce3+ shows a broad emission band at 422 nm under the 367 nm radiation excitation. YAl3(BO3)4:Tb3+ can be efficiently excited by the ultraviolet (UV) light, and produces green emission. The emission intensity of YAl3(BO3)4:Tb3+ can be enhanced by adjusting Tb3+ doped content, and reaches the maximum at 0.06 mol Tb3+. When Ce3+ is codoped, the emission intensity of Tb3+ in YAl3(BO3)4 can be enhanced, but the commission international del’eclairage (CIE) chromaticity coordinates of YAl3(BO3)4:Tb3+ have almost no change. Moreover, the energy transfer from Ce3+ to Tb3+ in YAl3(BO3)4 is studied.

The photoelectron decay characteristic directly reflects the photographic efficiency of silver halide crystals. Measurement of the electronic decay time-resolved spectrum of silver halide microcrystals can provide important information about the photoelectron decay action in latent image formation process. In order to know the influence of shallow electron trap dopant K4 Fe (CN)6 and S+Au on photoelectron decay, the photoelectron decay time-resolved spectra of AgCl emulsion doped by K4 Fe(CN) and that doped by K4 Fe(CN) firstly and then sensitized by S+Au were detected by microwave absorption dielectric technique, which can be used to study the decay process of free photoelectrons and shallow-trapped electrons in semiconductor crystals. The experimental results show that when the doping content is 10(-8)-10(-7) mol x mol(-1) Ag, the photoelectron decay process becomes slower, namely, the photoelectron decay time is longer, as the doping is near the grain surface before sensitization. After S+Au sensitization, the photoelectron decay becomes faster, showing that the sensitization centre acts as a deep electron trap. And when the doping is near the grain surface with 90% Ag, the photoelectron decay time becomes shorter, showing that the doping centre and the sensitization centre may interact.

Microwave absorption and film dielectric spectrum detection technology was used to study the influence of complex K4Ru (CN)6 on the photoelectron decay time-resolved spectrum of cubic AgCl crystals illuminated in this paper. The results indicate that the influence of the doping content and doping position of the complex K4Ru(CN)6 on the photoelectron decay time-resolved spectrum is evident. The photoelectron decay process of this emulsion is slowest, and the photoelectron lifetime is longest when doped with K4Ru (CN)6 of 2.45 x 10(-5) mol x (mol Ag)(-1) at doping positions of 75% Ag.

The adsorption and dissociation of oxygen molecule on Ti3Al (0001) surface have been investigated by density functional theory (DFT) with the generalized gradient approximation (GGA). All possible adsorption sites including nine vertical and fifteen parallel sites of O2 are considered on Ti3Al (0001) surface. It is found that all oxygen molecules dissociate except for three vertical adsorption sites after structure optimization. This indicates that oxygen molecules prefer to dissociate on the junction site between Ti and Al atoms. Oxygen atoms coming from dissociation of oxygen molecule tend to occupy the most stable adsorption sites of the Ti3Al (0001) surface. The distance of O–O is related to the surface dissociation distance of Ti3Al (0001) surface. The valence electron localization function (ELF) and projected density of states (DOS) show that the bonds of O–O are breakaway at parallel adsorption end structures.

Ta (3.3 nm)/ Ni – Al (3.3 nm) integrated films deposited on Si substrates by magnetron sputtering, annealed at various temperatures in a ultra-high vacuum, have been studied as diffusion barrier layers between Cu and Si for application in Cu interconnection. The images of transmission electron microscopy (TEM) prove that the cross-sectional interfaces of Cu / Ta / Ni – Al / Si sample annealed at 600°C are clear and sharp. No Cu –silicide peaks can be found from the X-ray diffraction (XRD) patterns of the 850°C annealed sample, but the sheet resistance of the sample increases abruptly. Moreover, large grooves are found from the image of atomic force microscopy (AFM) for the 850°C annealed sample, implying the failure of the diffusion barrier. The integrated Ta / Ni – Al barrier layer retains thermally stable nature up to at least 800°C, indicating that the Ta / Ni – Al integrated film is an excellent diffusion barrier between Cu and Si .

Polycrystalline Bi 0.975 La 0.025 Fe 0.975 Ni 0.025 O 3 (BLFNO) film is fabricated on Pt / Ti / SiO 2/ Si (111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt / BLFNO / Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt / BLFNO / Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt / BLFNO / Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Polycrystalline Bi0.975La0.025Fe0.975Ni0.025O3 (BLFNO) film is fabricated on Pt/Ti/SiO2/Si(111) substrate by sol–gel method. It is found that the well-crystallized BLFNO film is polycrystalline, and the Pt/BLFNO/Pt capacitor possesses good ferroelectric properties with remnant polarization of 74 μC/cm2 at electric field of 833 kV/cm. Moreover, it is also found that the leakage current density of the Pt/BLFNO/Pt capacitor increases with the increase of measurement temperature ranging from 100 to 300 K. The leakage density of the Pt/BLFNO/Pt capacitor satisfies space-charge-limited conduction (SCLC) at higher electric field and shows little dependence on voltage polarity and temperature, but shows polarity and temperature dependence at lower applied electric field. With temperature increasing from 100 to 300 K at lower applied electric field, the most likely conduction mechanism is from Ohmic behavior to SCLC for positive biases, but no clear dominant mechanism for negative biases is shown.

Using the first principle method, we investigate the influence of Sr/Ti ratio on the atomic structure and dislocation behavior of Srn+1TinO3n+1(Ruddlesden—Popper phase) and SrnTin+1O3n+2 (Magneli phase). A linear lattice expansion versus the Sr/Ti ratio exhibits in the Ruddlesden—Popper and Magneli phases. The Ruddlesden—Popper phase has lower formation energy and superior structural stability than the Magneli phase. The two phases show different dislocation behaviors and it is found that a possibly preferred slip system 〈110〉 {110} emerges in the two phases, and the dislocations are more likely to dissociate into partial dislocations in Magneli phases.