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Bragg spectroscopy, one of the best established experimental techniques for high energy resolution X-ray measurements, has always been limited to the measurement of photons produced from well collimated (tens of microns) or point-like sources; recently, the VOXES collaboration at INFN National Laboratories of Frascati developed a prototype of a high resolution and high precision X-ray spectrometer working also with extended isotropic sources. The realized spectrometer makes use of Highly Annealed Pyrolitic Graphite (HAPG) crystals in a “semi„-Von Hamos configuration, in which the position detector is rotated with respect to the standard Von Hamos one, to increase the dynamic energy range, and shows energy resolutions at the level of 0.1% for photon energies up to 10 keV and effective source sizes in the range 400–1200 μ m in the dispersive plane. Such wide effective source dimensions are achieved using a double slit system to produce a virtual point-like source between the emitting target and the crystal. The spectrometer performances in terms of reflection efficiency and peak resolution depend on several parameters, among which a special role is played by the crystal mosaicity and thickness. In this work, we report the measurements of the Cu(K α 1 , 2 ) and the Fe(K α 1 , 2 ) lines performed with different mosaicity and thickness crystals in order to investigate the influence of the parameters on the peak resolution and on the reflection efficiency mentioned above.

Purpose: The authors describe the modification to a previously developed Monte Carlo model of semiconductor direct x-ray detector required for studying the effect of burst and recombination algorithms on detector performance. This work provides insight into the effect of different charge generation models for a-Se detectors on Swank noise and recombination fraction. Methods: The proposed burst and recombination models are implemented in the Monte Carlo simulation package, ARTEMIS, developed by Fang et al. ['Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: Application to pulse-height spectroscopy in a-Se,' Med. Phys. 39(), - (2012)]. The burst model generates a cloud of electron-hole pairs based on electron velocity, energy deposition, and material parameters distributed within a spherical uniform volume (SUV) or on a spherical surface area (SSA). A simple first-hit (FH) and a more detailed but computationally expensive nearest-neighbor (NN) recombination algorithms are also described and compared. Results: Simulated recombination fractions for a single electron-hole pair show good agreement with Onsager model for a wide range of electric field, thermalization distance, and temperature. The recombination fraction and Swank noise exhibit a dependence on the burst model for generation of many electron-hole pairs from a single x ray. The Swank noise decreased for the SSA compared to the SUV model at 4 V/μm, while the recombination fraction decreased for SSA compared to the SUV model at 30 V/μm. The NN and FH recombination results were comparable. Conclusions: Results obtained with the ARTEMIS Monte Carlo transport model incorporating drift and diffusion are validated with the Onsager model for a single electron-hole pair as a function of electric field, thermalization distance, and temperature. For x-ray interactions, the authors demonstrate that the choice of burst model can affect the simulation results for the generation of many electron-hole pairs. The SSA model is more sensitive to the effect of electric field compared to the SUV model and that the NN and FH recombination algorithms did not significantly affect simulation results. [ABSTRACT FROM AUTHOR]

X-ray Bragg diffraction profiles of epitaxial layers of A1N and GaN grown on c-plane sapphire were measured with a novel triple-axis diffractometer using a parabolically curved, graded multilayer mirror in the diffracted beam instead of an analyzer crystal. In addition, the intensity of the incident beam is enhanced by a parabolically graded multilayer mirror acting as condensor for a Ge(022) channel-cut monochromator. This novel diffractometer configuration provides a clear improvement in intensity at sufficiently high resolution for the study of angular peak broadening and peak shape functions of weak reflections from samples of poor structural quality and from thin layers. For AlN and GaN, the reason for peak broadening of symmetric rocking curves was found to be small coherence lengths parallel to the substrate surface and not distinct out-of-plane misorientations. Additionally, different peak broadenings of asymmetric reflections due to edge dislocations were observed for AlN and GaN. [ABSTRACT FROM AUTHOR]