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Two-dimensional spintronics has become a hot topic in recent years due to its advantages and potential in manipulating electron spins. In this paper, the electronic structures and magnetic properties of the Janus NbSSe monolayer are calculated using first-principles and Monte Carlo methods. Our study shows that the ground state of the material is a ferromagnetic metal. Under carrier doping, it undergoes a second-order phase transition from metal to half-metal, achieving 100% spin polarization, and enhancing or weakening ferromagnetic coupling. The value of the magnetocrystalline anisotropy energy is 570.96 μeV, and doping with an appropriate concentration of holes can transform the easy magnetization axis from in-plane to out-of-plane. Since the out-of-plane mirror symmetry is broken, we study the charge changes in the layer under the action of an external electric field. Due to the combined action of the external electric field and the built-in electric field, the layer exhibits a unique charge transfer mode. It is predicted that the Curie temperature of the material is about 156 K. When doped with 4.01 × 1013 cm−2 (0.04 holes per atom) concentration holes, the Curie temperature can reach about 350 K, indicating that the Curie temperature of the material can be reasonably controlled by regulating the carrier concentration. The coercive force calculated from the hysteresis loop is 0.01 T, and its hysteresis loss is low, showing its response to the external magnetic field. All of the above results indicate the application potential of this material in spin-electronic devices. [ABSTRACT FROM AUTHOR]

High-performance and stable spintronic devices have garnered considerable attention in recent years. Based on first-principle and Monte Carlo calculations, we demonstrate that under reasonable carrier doping, H-VSe2 exhibits 100% spin polarization, a magnetic anisotropy energy of 581 μeV, a tunable easy-axis, and a Curie temperature of 330 K. Moreover, Dzyaloshinskii–Moriya interactions in H-VSe2 and magnetic hysteresis loops are determined theoretically for the first time, which provides more precise and comprehensive descriptions of its magnetic properties under finite temperatures and external magnetic field. This work suggests that H-VSe2 is a powerful candidate for spintronic devices, and it provides solid theoretical support for future experiments. [ABSTRACT FROM AUTHOR]

Investigating high-performance and stable spintronics devices has been a research hotspot in recent years. In this paper, we employed first-principles methods and Monte Carlo (MC) simulations to explore the structure, electronic, and magnetic properties of monolayer NbSe2, as well as its behavior under carrier concentration modulation. The research on the electronic structure reveals that by introducing an appropriate amount of holes, the material can undergo a transition from metal to a half-metal state, achieving 100% high spin polarization. Investigation of magnetic crystalline anisotropy shows that the magnetic crystal anisotropy energy of 1210 μeV in out-of-plane is beneficial to maintain ferromagnetic order at high temperatures. In addition, doping with suitable carriers can effectively enhance or strengthen the ferromagnetic coupling in NbSe2 so that the magnetization easy axis is shifted. This reveals the potential application prospects of NbSe2 in electronically controlled spintronic devices. Analysis of the Fermi surface shows that both holes and electron doping increase the Fermi velocity of the material. The effect of hole doping is particularly significant, indicating its potential application in Fermi velocity engineering. Under the theoretical framework of the extended two-dimensional Ising model, based on MC simulation, the Curie temperature (TC) of NbSe2 is predicted to be 162 K. The effects of carrier concentration and the magnetic field on the magnetic and thermal properties of monolayer NbSe2 are simulated. The results show that appropriately increasing the hole doping concentration and magnetic field is conducive to obtaining ferromagnetic half-metallic materials with TC higher than room temperature, which provides theoretical support for experimental preparation. [ABSTRACT FROM AUTHOR]

The investigation and development of high thermoelectric value materials has become a research hotspot in recent years. In this work, based on the density functional theory on the Perdew–Burke–Ernzerhof (GGA-PBE) level, the thermoelectric properties of transition metal halides CdBr, Janus Cd2BrI, and CdI monolayers have been systematically investigated using Boltzmann transport theory. The calculation of the electronic band structure shows that these three materials have indirect band gap semiconductor properties. For carrier transport, the electron mobilities for CdBr, Janus Cd2BrI, and CdI monolayers are found to be 74, 16, 21 cm2 s−1 V−1 for p-type doping and 116, 102, 78 cm2 s−1 V−1 for n-type doping. Regarding their phonon transport, the CdBr, Cd2BrI, and CdI monolayers all have very low lattice thermal conductivity (4.78, 2.46, and 1.65 W m−1 K−1, respectively) that decreases with increasing temperature, which is favorable for obtaining large zT values. The electrical transport results show that the performance of p-type doping is better than that of n-type doping. At 300 K, the Seebeck coefficients of p-type doping for the CdBr, Cd2BrI, and CdI monolayers are 217.72, 246.43, and 226.24 μV K−1, respectively. In addition, we predict that the zT values of the CdBr, Cd2BrI, and CdI monolayers are 0.62, 1.64, and 0.87 for p-type doping at 300 K respectively. The zT values increase with the increase of temperature. In particular, the Janus Cd2BrI monolayer has a zT value of 3.03 at 600 K. These results suggest that all these materials can be good candidates for thermoelectric materials. [ABSTRACT FROM AUTHOR]