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9 results on '"Wu, Xinxiu"'

5. Enhanced synaptic performances in SrIrO3 thin films by a ferroelectric layer.

Author

Wu, Xinxiu, Li, Zeyang, Yi, Xiao, Jia, Caihong, and Zhang, Weifeng

Subjects
*FERROELECTRIC thin films, *LONG-term synaptic depression, *ELECTRIC stimulation, *NEUROPLASTICITY, *CHARGE carrier mobility, *LEAD titanate, *SYNAPSES
Abstract

SrIrO3 (SIO) with a perovskite structure exhibits broad application prospects in electronic synapses due to its high carrier mobility, scalability, and compatibility with silicon technology. On the other hand, ferroelectric polarization can efficiently and directionally regulate the movement of carriers, which provides the possibility to improve the synaptic properties of such materials. In this study, electronic synapses based on the SIO epitaxial film with introducing a ferroelectric PbZr0.2Ti0.8O3 (PZT) layer, multiple important synaptic plasticity functions including paired-pulse depression, spike-rate-dependent plasticity, spike-time-dependent plasticity, and abnormal Bienenstock–Cooper–Munro learning rule have been simulated by electrical stimulation. Furthermore, the PZT/SIO/Nb:SrTiO3 (NSTO) device exhibits larger synaptic weight and dynamic range of conductance and requires less training pulses compared to the SIO/NSTO device, which may be attributed to the enhanced modulation of the variation in the SIO/NSTO interface barrier by the polarization field. This research makes a great contribution to the efficient and fast information transmission of neuromorphic computing. [ABSTRACT FROM AUTHOR]

Published
2023
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9. Strain- and Oxygen-Modulated Anomalous Hall Effect in the SrRuO3/Sr3Al2O6Heterostructure

Author

Li, Han, Kang, Chaoyang, Liu, Jiesong, Wang, Zhenli, Miao, Qingqing, Zhang, Liping, Wu, Xinxiu, Ren, Xinqian, Meng, Anxin, Chen, Xuegang, and Zhang, Weifeng

Abstract

The hump-like anomalous Hall effect (AHE) is an intriguing phenomenon in physics and the material community, with significant potential applications for spintronics. The physical mechanism responsible for this effect is still a topic of debate. Here, the unconventional hump-like AHE is observed in the epitaxial SrRuO3(SRO)/Sr3Al2O6(SAO) heterostructure with a relatively thick SRO thickness, accompanying the sign change of anomalous Hall resistance. This hump-like AHE disappears in the freestanding SRO film after the SAO layer was dissolved in water. Additionally, the hump-like feature could be manipulated by the in-plane tensile strain and oxygen vacancies through varying the SAO thickness and in situ oxygen annealing, respectively. A two-domain model, namely, domain I and domain II for negative and positive Hall resistance, is employed to comprehensively understand the hump-like AHE observed in SRO/SAO heterostructures. The positive and negative anomalous Hall resistances are strongly bonded to the intrinsic nontrivial band structure. Microscopically, the formation of the two-domain is closely related to the modulation of Ru–O–Ru bond/length as well as the octahedral rotation. This study provides some comprehensive understanding of the origination of hump-like AHE in SRO-based films, which could facilitate the application of SRO in spintronics.

Published
2023
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