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Sb2O x nano-film/c-Si composite solar cells were prepared by the spin-coating method. The absorption efficiency, the minority carrier lifetime, and the internal/external quantum efficiency of Sb2O x /c-Si solar cells had a significant improvement because Sb2O x nano-film, as a wide band gap (~3.44 eV) semiconductor, had an excellent photoelectrical performance, and could form an effective heterojunction with the silicon substrate. Sb2O x nano-films deposited on the c-Si wafers reduced the loss of the solar light, absorbed the high-energy photons, accelerated the transmission and separation of the photo-generated carriers, and suppressed the recombination of the minority carriers effectively. Thus the power conversion efficiency was improved from 12.8 to 15.3% in Sb2O x /c-Si solar cells, which was enhanced by 19.53% compared to the untreated polycrystalline silicon solar cells. This research focused on Sb2Ox, served as a direct wide band gap semiconductor material with a band gap of ~3.44 eV. Depositing Sb2Ox nano-film on the crystalline silicon wafer can effectively broaden its absorption range. Moreover, Sb2Ox nanoparticles themselves can generate the electron-hole pairs when excited. The electron-hole pairs can be captured and separated before they recombine in the built-in electric field. These findings may have general implications in the improvement of the quantum efficiency and the photoelectric conversion efficiency of the crystalline silicon solar. [ABSTRACT FROM AUTHOR]

Two-dimensional MoS2-based heterostructures have been given great attention due to their excellent properties. In this work, using first-principles calculations, the photocatalytic performances for overall water splitting and the photocatalytic mechanism of graphitic SiC (g-SiC)/MoS2 van der Waals heterostructures (vdWHs) have been deeply studied compared with the previous report. We align common type-II band edges for the g-SiC/MoS2 vdWH in different configurations, which demonstrates that the reduction and oxidation reactions are conducted on different parts in the g-SiC/MoS2 vdWHs. Besides, the built-in electric field induced by the charge transfer at the interface region can be used to hinder photogenerated e−/h+ from recombining, which is advantageous to the availably enhanced carrier mobility and extended lifetimes. More meaningfully, the g-SiC/MoS2 vdWHs all have considerable optical absorption as high as 105 cm−1 in the visible zone and enhanced absorption capacity in contrast to the separate g-SiC and MoS2 monolayers. Furthermore, owing to the contribution of built-in electric field, the g-SiC/MoS2 vdWH in diverse patterns can be used as an outstanding photocatalyst even under near-infrared light with high efficiency. Overall, these findings predict a promising application prospective for the g-SiC/MoS2 vdWHs as extraordinary photocatalysts for overall water splitting reactions, suggesting the valuable significance in the fields of hydrogen production and energy conversion. [ABSTRACT FROM AUTHOR]

Herein, we proposed a novel excellent two-dimensional photocatalyst, the SnN 3 monolayer, using first-principles calculations. The stability of the SnN 3 monolayer was examined via formation energy, phonon spectroscopy and ab initio molecular dynamics simulations. The SnN 3 monolayer has an ultra-high optical absorption capacity of the order of 10 5 cm -1 in the visible region, which is 3, 4 and 10 times those of SnP 3 , MoS 2 and g-C 3 N 4 monolayers, respectively. Moreover, it has a higher carrier mobility, 769.19 cm 2 V -1 s -1 , than the other monolayers; the available electrostatic potential of -5.02 eV and the appropriate band gap of 1.965 eV indicate its applicability as a catalyst for overall water splitting over a wide strain range. The electronic properties of the SnN 3 monolayer could also be engineered effectively by altering the external strain and electric field.

Two-dimensional MoS2-based heterostructures have been given great attention due to their excellent properties. In this work, using first-principles calculations, the photocatalytic performances for overall water splitting and the photocatalytic mechanism of graphitic SiC (g-SiC)/MoS2 van der Waals heterostructures (vdWHs) have been deeply studied compared with the previous report. We align common type-II band edges for the g-SiC/MoS2 vdWH in different configurations, which demonstrates that the reduction and oxidation reactions are conducted on different parts in the g-SiC/MoS2 vdWHs. Besides, the built-in electric field induced by the charge transfer at the interface region can be used to hinder photogenerated e-/h+ from recombining, which is advantageous to the availably enhanced carrier mobility and extended lifetimes. More meaningfully, the g-SiC/MoS2 vdWHs all have considerable optical absorption as high as 105 cm-1 in the visible zone and enhanced absorption capacity in contrast to the separate g-SiC and MoS2 monolayers. Furthermore, owing to the contribution of built-in electric field, the g-SiC/MoS2 vdWH in diverse patterns can be used as an outstanding photocatalyst even under near-infrared light with high efficiency. Overall, these findings predict a promising application prospective for the g-SiC/MoS2 vdWHs as extraordinary photocatalysts for overall water splitting reactions, suggesting the valuable significance in the fields of hydrogen production and energy conversion.