Search

Your search keyword '"Wu, Ming-Chi"' showing total 156 results
Start Over Author "Wu, Ming-Chi"
156 results on '"Wu, Ming-Chi"'

12. Development of a multiplexed interface for capillary electrophoresis--electrospray ion trap mass spectrometry

Author

Li, Fu-An, Wu, Ming-Chi, and Her, Guor-Rong

Subjects
Secondary ion mass spectrometry -- Usage, Electrophoresis -- Research, Capillarity -- Research, Chemistry
Abstract

A four-channel multiplexed electrospray capillary electrophoresis interface has been developed. This new interface permits up to four capillary electrophoresis columns to be sampled sequentially by means of a stepper motor and a notched rotating plate assembly, which at any instant occludes all but a single sprayer. In this design, four sheath liquid electrospray probes are oriented in a circular array situated 90[degrees] relative to one another. The rotating metal disk, which contains a one-quarter notch, is mounted to the stepper motor assembly and is located between the sprayers and the entrance aperture of an ion trap mass spectrometer. By using the data acquisition signal from the ion trap mass spectrometer, the scan event is synchronized with the rotation of the metal disk. With this device, four discrete sample streams can be simultaneously analyzed, resulting in a 4-fold increase in analytical throughput.

Published
2006

17. Robust unipolar resistive switching of Co nano-dots embedded ZrO2 thin film memories and their switching mechanism.

Author

Wu, Ming-Chi, Wu, Tsung-Han, and Tseng, Tseung-Yuen

Subjects
*THIN films, *SOLID state electronics, *MOLECULAR spectroscopy, *FERROELECTRIC RAM, *MOLECULAR orbitals, *CHEMICAL reactions, *NANOELECTRONICS
Abstract

The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2 thin film after the memory device is annealed at 600 °C in N2 ambient for 60 s without any chemical reaction between Co and ZrO2, which is confirmed from the transmission electron microscopy, energy dispersive X-ray analyzer, and X-ray photoelectron spectroscopy observations. The devices exhibit low forming voltage of -1.5∼-2.8 V and robust negative bias unipolar resistive switching behaviors with small negative set voltage of -1.1∼-1.6 V. A physical model based on a filament mechanism is employed to explain the switching behaviors. It has a high potential for ultra high density nonvolatile memory applications . [ABSTRACT FROM AUTHOR]

Published
2012
Full Text
View/download PDF

41. Chen merely reaffirmed long-held principles

Author

Wu, Ming-Chi

Subjects
Banking, finance and accounting industries, Business, Business, international
Abstract

From Mr Ming-chi Wu. Sir, James Kynge and Mure Dickie's excellent article 'Calls for Taiwan referendum sparks warning from China' (August 6) missed one important point. Taiwan President Chen Shui-bian's [...]

Published
2002

50. High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed \SrZrO3 Memory Devices.

Author

Lin, Meng-Han, Wu, Ming-Chi, Huang, Yi-Han, Lin, Chen-Hsi, and Tseng, Tseung-Yuen

Subjects
*TEMPERATURE effect, *RAPID thermal processing, *COMPUTER storage devices, *SWITCHING theory, *ELECTRIC resistance, *OXYGEN, *STRONTIUM compounds, *SCANNING electron microscopy
Abstract

This paper reports the effects of rapid thermal annealing (RTA) on resistive switching (RS) characteristics and mechanisms of \SrZrO3 (SZO)-based memory devices. SZO thin films were deposited on \LaNiO3 (LNO) (\100)/\Pt/Ti/SiO2/\Si using radio-frequency magnetron sputtering and were followed by an RTA process in \N2, Ar, and \O2 ambients, respectively, at various temperatures for improving RS performance. Experimental results indicate that an SZO device annealed in \O2 at 600 ^\circ\C (\O2-600) exhibits stable RS properties and has a high device yield (\sim 90%), a reliable retention characteristic (up to \1 \times \10^6\ \s at 100 ^\circ\C), and steady nondestructive readout properties (over \1.4 \times \10^4\ \s at 100 ^\circ\C). However, by increasing RTA temperature to more than 700 ^\circ\C, random formation of LNO (110) precipitates on the bottom surface of SZO grains might shorten the effective thickness of the SZO thin films. Furthermore, a strong electric field possibly occurs at the region between Al top electrodes and low-resistivity LNO precipitates. It is speculated that an RS phenomenon, which occurs within SZO grains instead of on grain boundaries, easily leads to RS failure, further resulting in severe degradation of device yield in the \O2-700 and \O2-800 devices. When compared with other devices, \O2-600 SZO memory devices exhibit highly reliable RS characteristics. [ABSTRACT FROM AUTHOR]

Published
2011
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results