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This study presents a comprehensive investigation of the impact of the deposition temperature on the HfxZr1−xO2 (HZO) ferroelectric layer of ferroelectric random access memory with TaN electrodes. This investigation mainly focuses on its electrical characteristics and compares the differences. It is revealed that the deposition temperature plays a crucial role in determining the crystal structure of HZO, which can exhibit a combination of tetragonal and orthorhombic phases or exist solely in one of the two phases. Furthermore, the grain size of HZO varies with the deposition temperature. These findings correspond well to the electrical measurement results, including leakage current, polarization, capacitance, and reliability tests. The study tracks the phase transition process during the operation of switching cycles when the phase transition process can be monitored as well. To better understand the observed differences, physical models that shed light on the underlying mechanisms affected by deposition temperature are proposed at the end of the article. [ABSTRACT FROM AUTHOR]

In this study, electrical measurements on ferroelectric random-access memory by prior x-ray irradiation are conducted. Compared with an unirradiated device, parameters such as current leakage and remnant polarization of the irradiated device were unexpectedly improved. Besides, better reliabilities including the number of endurance times and retention time have also been demonstrated. To clarify the underlying physical mechanism, the electrical properties are analyzed. The current–voltage curve (I–V) implies a change in the grain size in the ferroelectric layer (FL), and the capacitance–voltage curve (C – V) profile indicates that the FL undergoes a phase change during irradiation. Finally, according to the electrical results, a physical model is proposed as an explanation. [ABSTRACT FROM AUTHOR]

This paper presents the mathematical modeling of flapping flight inch-size micro aerial vehicles (MAVs), namely micromechanical flying insects (MFIs). The target robotic insects are electromechanical devices propelled by a pair of independent flapping wings to achieve sustained autonomous flight, thereby mimicking real insects. In this paper, we describe the system dynamic models which include several elements that are substantially different from those present in fixed or rotary wing MAVs. These models include the wing-thorax dynamics, the flapping flight aero-dynamics at a low Reynolds number regime, the body dynamics, and the biomimetic sensory system consisting of ocelli, halteres, magnetic compass, and optical flow sensors. The mathematical models are developed based on biological principles, analytical models, and experimental data. They are presented in the Virtual Insect Flight Simulator (VIFS) and are integrated together to give a realistic simulation for MFI and insect flight. VIFS is a software tool intended for modeling flapping flight mechanisms and for testing and evaluating the performance of different flight control algorithms. Index Terms--Biomimetic sensors, flapping flight, flying insects, low Reynolds number, micro aerial vehicles (MAVs).

In this work, Ag-doped HfO2-based resistive random access memory (RRAM) with high on-off ratio, low-power consumption and forming-free properties was investigated. We propose the fabrication flow of the RRAM with via-hole structure. After doping Ag into HfO2 as the switching layer, the devices could execute resistive switching without a high-voltage forming process. The conduction mechanism was subsequently validated by a current fitting analysis. Electric field simulation was also utilized to observe the electric field distribution and finally a physical model was proposed to provide an explanation for the formation and dissolution of the filament. [ABSTRACT FROM AUTHOR]

Herein, the supercritical hydrogen treatment is proposed to improve the performance of zinc oxide‐based resistive random access memory. After treatment, the treated device not only achieves the forming‐free characteristic but also gets enhanced in its memory window, reset voltage, and reliability. Moreover, X‐Ray photoelectron spectroscopy analysis confirms the forming‐free characteristic of the treated device since the treatment decreases the concentration of ZnO bonding in the zinc oxide thin film, leading the conductive filament to be constructed in the zinc oxide switching layer. Next, the carrier transport mechanism is investigated by fitting current–voltage curves. Finally, the physical models based on the electrical properties and the material analyses are introduced to illustrate the oxygen ions and hydroxide ions that create the forming‐free characteristic and better memory characteristics in the random access memory device after the supercritical fluid treatment. Hence, this method demonstrates the promising practical and effective utilization of enhancing memory devices, in the future. [ABSTRACT FROM AUTHOR]

To observe the clinical outcomes of patients diagnosed with metastatic breast cancer undergoing Trastuzumab Deruxtecan (T-DXd) therapy in a real-world setting. The study retrospectively reviewed and collected medical data from 13 patients at Shin Kong Wu Ho-Su Memorial Hospital who underwent T-DXd treatment over a period from April 2022 to June 2023. Demographics, pathological characteristics, treatment patterns, and outcomes were descriptively analyzed. Thirteen patients diagnosed with metastatic breast cancer underwent T-DXd treatment between April 2022 and June 2023. This study observed that T-DXd was effective in patients with high human epidermal growth factor receptor 2 (HER2) levels. In patients with low HER2, the majority also experienced favorable responses. Only 2 patients exhibited poor or no response: one was a BRCA2 carrier with unmanageable disease progression, and the other had a HER2 1 + status with multiorgan metastases whose cancer was not controlled by T-DXd. Additionally, 2 patients with no HER2 expression responded well to T-DXd treatment. T-DXd is a valuable treatment alternative for patients with breast cancer, including those with HER2-high, HER2-low, and HER2-negative statuses. In this study, the majority of patients experienced positive therapeutic effects. However, this evaluation relied on a limited sample size and short-term observations. Additional studies involving larger and more diverse patient groups and long follow-up durations are required., Competing Interests: The authors have no funding and conflicts of interest to disclose., (Copyright © 2024 the Author(s). Published by Wolters Kluwer Health, Inc.)

In this study, we have investigated the improvements in the performance of an all-solid-state complementary electrochromic device (ECD) by using the proposed high pressure treatment (HPT). The Li:Ta 2 O 5 electrolyte layer was recrystallized by the HPT utilizing pressurized CO 2 gas (∼200 atm) and at low temperature (<60 °C), which enhanced the coloration performance of the WO 3 /Li:Ta 2 O 5 /NiO complementary ECD by ∼20%. The reliability and durability of the ECD were confirmed by long term transmittance retention measurements, which indicated an improvement in the coloration performance by ∼14% upon the release of the bias voltages. The ability of the devices that were fabricated with and without the HPT process to withstand high temperature environments was also verified. In addition, photoluminescence (PL) and transmittance measurements were carried out to examine the effects of the bonding between WO 3 and NiO. To determine the differences in lithium-ion (Li + ) injection, electrical measurements were performed by utilizing varying pulse rising speeds to confirm device characteristics. The materials were characterized in terms of their composition and structure using high-resolution transmission electron microscopy along with energy-dispersive x-ray spectroscopy. Finally, a mechanistic model has been proposed to explain the improved EC characteristics based on the amorphous to crystalline transition accompanying the HPT process., (© 2022 IOP Publishing Ltd.)