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4. Fabrication and formation mechanisms of ohmic conducts with low annealing temperature for GaN/AlN superlattice barrier HEMTs.

7. High On/Off Current Ratio and High Vth/Ron Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

8. Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH3 Plasma Pretreatment

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