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Spintronic terahertz emitters (STEs), based on optical excitation of nanometer thick ferromagnetic/heavy metal (FM/HM) heterojunctions, have become important sources for the generation of terahertz (THz) pulses. However, the efficiency of the optical-to-THz conversion remains limited. Although optical techniques have been developed to enhance the optical absorption, no investigations have studied the application of THz cavities. Here, to enhance the THz efficiency of STEs in a selected THz spectral range, FM/HM structures are realized on ultra-thin sapphire layers with metallic mirrors to create λ/4 THz resonant cavities. THz emission time domain spectroscopy of these STE/sapphire/mirror heterostructures, with sapphire thicknesses ranging from 110 µm to 25 µm, shows enhancement of the emitted THz field that fits the λ/4 cavity resonance with up to a doubling of the field in the spectrum, and in agreement with temporal simulations of the emitted THz pulse. By taking advantage of birefringent materials, we further show the potential of control of the polarization state of the emitted THz pulse. This work shows the potential of enhancing and engineering THz emission from STEs using THz cavities that can be controlled over a broad spectral range, which can be easily combined with optical cavities.

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe 2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe 2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe 2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe 2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe 2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe 2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)