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30 results on '"Woo, Kie Young"'

4. Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors

Author

Shin, June‐Chul, primary, Jeong, Jae Hwan, additional, Kwon, Junyoung, additional, Kim, Yeon Ho, additional, Kim, Bumho, additional, Woo, Seung‐Je, additional, Woo, Kie Young, additional, Cho, Minhyun, additional, Watanabe, Kenji, additional, Taniguchi, Takashi, additional, Kim, Young Duck, additional, Cho, Yong‐Hoon, additional, Lee, Tae‐Woo, additional, Hone, James, additional, Lee, Chul‐Ho, additional, and Lee, Gwan‐Hyoung, additional

Published
2024
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14. A Flash‐Induced Robust Cu Electrode on Glass Substrates and Its Application for Thin‐Film μLEDs

Author

Shin, Jung Ho, primary, Park, Jung Hwan, additional, Seo, Jeongmin, additional, Im, Tae Hong, additional, Kim, Jong Chan, additional, Lee, Han Eol, additional, Kim, Do Hyun, additional, Woo, Kie Young, additional, Jeong, Hu Young, additional, Cho, Yong‐Hoon, additional, Kim, Taek‐Soo, additional, Kang, Il‐Suk, additional, and Lee, Keon Jae, additional

Published
2021
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29. Highly transparent conductive Ag/Ga2O3 electrode for near-ultraviolet light-emitting diodes.

Author

Woo, Kie Young, Lee, Jae Hoon, Kim, Kyeong Heon, Kim, Su Jin, and Kim, Tae Geun

Subjects
*ULTRAVIOLET radiation, *ELECTRODES, *LIGHT emitting diodes, *ELECTRIC potential measurement, *ELECTRIC resistance
Abstract

We fabricated an Ag/Ga2O3 bilayer as a highly transparent conductive electrode for near-ultraviolet (NUV) light-emitting diodes (LEDs). The bilayer showed nonohmic characteristics because the as-deposited Ga2O3 film is an insulator. However, the bilayer thermally annealed in ambient air and N2 at 550 °C for 1 min showed ohmic-like current-voltage characteristics including specific contact resistances of 3.06 × 10−2 and 7.34 × 10−2 Ω cm2, respectively. The optical transmittance and sheet resistance of the bilayer were about 91% and <42 Ω/□ at 380 nm. The results suggest that the Ag/Ga2O3 bilayer is suitable for application as a p-type electrode in NUV-LEDs. [ABSTRACT FROM AUTHOR]

Published
2014
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30. Electrically Confined Electroluminescence of Neutral Excitons in WSe 2 Light-Emitting Transistors.

Author

Shin JC, Jeong JH, Kwon J, Kim YH, Kim B, Woo SJ, Woo KY, Cho M, Watanabe K, Taniguchi T, Kim YD, Cho YH, Lee TW, Hone J, Lee CH, and Lee GH

Abstract

Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential in optoelectronic applications due to their direct band gap and exceptional quantum yield. However, TMD-based light-emitting devices have shown low external quantum efficiencies as imbalanced free carrier injection often leads to the formation of non-radiative charged excitons, limiting practical applications. Here, electrically confined electroluminescence (EL) of neutral excitons in tungsten diselenide (WSe 2 ) light-emitting transistors (LETs) based on the van der Waals heterostructure is demonstrated. The WSe 2 channel is locally doped to simultaneously inject electrons and holes to the 1D region by a local graphene gate. At balanced concentrations of injected electrons and holes, the WSe 2 LETs exhibit strong EL with a high external quantum efficiency (EQE) of ≈8.2 % at room temperature. These experimental and theoretical results consistently show that the enhanced EQE could be attributed to dominant exciton emission confined at the 1D region while expelling charged excitons from the active area by precise control of external electric fields. This work shows a promising approach to enhancing the EQE of 2D light-emitting transistors and modulating the recombination of exciton complexes for excitonic devices., (© 2024 Wiley‐VCH GmbH.)

Published
2024
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