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SbSI and SbSeI materials, which are one-dimensional materials based on van der Waals bonds, have the same crystal structure and physical property changes because of their differences in lattice constants. Therefore, controlling the band structure of these materials in accordance with the mixing ratio of S and Se is important. In this study, SbSI, SbSeI, and alloys with intermediate compositions were synthesized, and their crystal and band structures were analyzed. Results showed a lattice strain proportional to the composition of the S–Se mixture, which was synthesized as a stable phase without phase separation. As S was substituted with Se, the band gap decreased. These results could be utilized in various fields of optoelectronic devices where Sb (S or Se) I series is primarily applied. [ABSTRACT FROM AUTHOR]

With the increasing demand for wireless communication technology in the microwave frequency range, the development of composite materials with low dielectric constant and low loss is essential. In this study, we synthesized core–shell structured porous MgO microspheres with SiO2 layers, which were subsequently calcinated at 800 °C to obtain a pure Mg2SiO4 phase. The pure Mg2SiO4 filler was then incorporated into polystyrene (PS) to make composites with varying filler volume percentages. The morphology and phase transformation of the synthesized samples were analyzed using scanning electron microscopy and X-ray diffraction, respectively. The dielectric properties of the PS-Mg2SiO4 composites were investigated at 9.4 GHz. The obtained results indicate that the dielectric constant and dielectric loss of the composite increase with filler volume percentage. The PS-Mg2SiO4 composite with 30 vol% filler demonstrated the most promising dielectric properties, with a dielectric constant of 2.79 and a dielectric loss of 0.0085 at 9.4 GHz. These findings confirm that the PS-Mg2SiO4 composite has potential applications in faster and more secure wireless communication technology in the microwave frequency range. [ABSTRACT FROM AUTHOR]

Recently, the 1D ternary transition metal chalcogenide Nb2Pd3Se8 has been reported as a promising channel material for the field‐effect transistors (FETs) with high performance transport behavior. Its structural characteristic of weak van der Waals (vdW) forces between unit ribbons allows for the isolation of high quality Nb2Pd3Se8 nanowires from the bulk crystal that are similar to typical layered 2D materials. This study reports on the liquid phase exfoliation (LPE) of 1D vdW Nb2Pd3Se8 to predict the optimal solvent in terms of the total surface tension and polar/dispersive component ratio. Among the various test solvents, N‐methyl‐2‐pyrrolidone and dimethylformamide are found to be the best solvents for the exfoliation and stabilization of the Nb2Pd3Se8 nanowires due to their well‐matched total surface tensions and polar/dispersive component ratios. Additionally, FETs are fabricated on the LPE‐processed Nb2Pd3Se8 nanowires, and the charge transport behavior is characterized at room temperature. The FETs exhibit n‐type characteristics with an Ion/Ioff ratio and field‐effect mobility up to ≈103 and 15 cm2 V−1 s−1. This study on the LPE of novel Nb2Pd3Se8 nanowires is an important step toward various practical applications in nanoelectronics. [ABSTRACT FROM AUTHOR]

In this work, high‐quality 1D van der Waals (vdW) Nb2Pd3Se8 is synthesized, showing an excellent scalability from bulk to single‐ribbon due to weakly bonded repeating unit ribbons. The calculation of electronic band structures confirmed that this novel Nb2Pd3Se8 is a semiconducting material, displaying indirect‐to‐direct bandgap transition with decreasing the number of unit‐ribbons from bulk to single. Field effect transistors (FETs) fabricated on the mechanically exfoliated Nb2Pd3Se8 nanowires exhibit n‐type transport characteristics at room temperature, resulting in the values for the electron mobility and Ion/Ioff ratio of 31 cm2 V−1 s−1 and ≈104, respectively. Through transport measurements at various temperatures from room temperature down to 90 K, it is confirmed that Nb2Pd3Se8 FETs can achieve negligible Schottky barrier height (SBH) for the Au contacts at the temperature range, displaying clear ohmic contact characteristics. Furthermore, top‐gated FETs fabricated with the Al2O3 dielectric layer are studied simultaneously with back‐gated FETs. [ABSTRACT FROM AUTHOR]

We demonstrate the differential detection of UV-A (ultra-violet 320–400 nm region) and UV-C (100–280 nm) using porous two-dimensional (2D) Nb2O5 and additional Ag nano-particle decoration. The 2D Nb2O5, which has band-absorption edge near the UV-A zone, was synthesized by thermodynamic conversion of 2D material NbSe2 (Nb2O5 has lower Gibbs formation energy than NbSe2). For the differential detection (to distinguish with UV-C absorption), we decorated the Ag nano-particles on the Nb2O5 surface. By coating Ag nano-particles, we can expect (i) a decrease in the area of light absorption by the Ag-coated area, and (ii) an increase of surface plasmon absorption by Ag nano-particles, especially the UV-A region, resulting in strong intensity ratio change UV-A/UV-C. [ABSTRACT FROM AUTHOR]

The presence of oxygen vacancies (Vo) in electrocatalysts plays a significant role in improving the selectivity and activity of CO2 reduction reaction (CO2RR). In this study, 1D material with large surface area is utilized to enable uniform Vo formation on the catalyst. 1D structured indium selenoiodide (InSeI) is synthesized and used as an electrocatalyst for the conversion of CO2 to formate. The electrochemical treatment of InSeI leads to the leaching of Se and I from the catalyst surface and the formation of Vo. The resulting Vo promotes the activity of the CO2RR, which increases the local pH of the catalyst surface and chemically maintains the oxidized metal sites on the catalyst. Owing to these characteristics, activated In wire exhibited remarkable CO2RR activity, thereby surpassing 93% FEformate at 500 mA cm−2, with a maximum of 97.3% FEformate at 100 mA cm−2. Moreover, the catalytic activity remained consistent for over 50 h at 100 mA cm−2 (FEformate >88%). Thus, the findings imply that using 1D materials can facilitate the formation of oxygen vacancies on the catalyst surface and improve the selectivity and durability of CO2RR. This indicates the potential for further research on 1D materials as electrocatalysts. [ABSTRACT FROM AUTHOR]

1D nanostructures exhibit a large surface area and a short network distance, facilitating electron and ion transport. In this study, a 1D van der Waals material, tin iodide phosphide (SnIP), is synthesized and used as an electrocatalyst for the conversion of CO 2 to formate. The electrochemical treatment of SnIP reconstructs it into a web-like structure, dissolves the I and P components, and increases the number of oxygen vacancies. The resulting oxygen vacancies promote the activity of the CO 2 reduction reaction (CO 2 RR), increasing the local pH of the electrode surface and maintaining the oxidative metal site of the catalyst despite the electrochemically reducing environment. This strategy, which stabilizes the oxidation state of the catalyst, also helps to improve the durability of CO 2 RR. In practice, 1D structured SnIP catalyst exhibits outstanding performance with >92% formate faradaic efficiency (FE formate ) at 300 mA cm -2 , a maximum partial current density for formate of 343 mA cm -2 , and excellent long-term stability (>100 h at 100 mA cm -2 with >86% FE formate ). This study introduced a method to easily generate oxygen vacancies on the catalyst surface by utilizing 1D materials and a strategy to improve the durability of CO 2 RR by stabilizing the oxidation state of the catalyst., (© 2024 The Author(s). Small published by Wiley‐VCH GmbH.)