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This article presents a detailed investigation of non-stoichiometric (Ti,Co)Ox thin films prepared using the Gas Impulse Magnetron Sputtering (GIMS) technique. The films were prepared with various Co contents (3 at.%, 19 at.%, 44 at.%, and 60 at.%) and characterized for their material composition, microstructure, and electrical properties. The films exhibited an ohmic behavior with linear current-voltage (I-V) characteristics, and their resistivity values ranged from approximately 10−3 to 104 Ω·cm. The highest resistivity was observed in the film with 3 at.% Co content. Thermoelectric measurements revealed that all of the prepared films displayed n-type semiconducting properties, with the Seebeck coefficient (S) tending close to zero. The resistivity of the films decreased as the temperature increased, affirming their semiconducting nature. The activation energy (Ea) values, determined using the Arrhenius formula, ranged from 0.0058 eV to 0.267 eV, with the highest Ea observed for films containing 3 at.% Co. Additionally, the films' surface topography and microstructure were examined through Atomic Force Microscopy (AFM) and optical profiler techniques. The results showed that the films had smooth, crack-free surfaces with remarkable homogeneity. The surface diversification decreased with the increase in cobalt in the (Ti,Co)Ox films. [ABSTRACT FROM AUTHOR]

In this work the physicochemical and biological properties of nanocrystalline TiO2 thin films were investigated. Thin films were prepared by magnetron sputtering method. Their properties were examined by X-ray diffraction, photoelectron spectroscopy, atomic force microscopy, optical transmission method and optical profiler. Moreover, surface wettability and scratch resistance were determined. It was found that as-deposited coatings were nanocrystalline and had TiO2-anatase structure, built from crystallites in size of 24 nm. The surface of the films was homogenous, composed of closely packed grains and hydrophilic. Due to nanocrystalline structure thin films exhibited good scratch resistance. The results were correlated to the biological activity (in vitro) of thin films. Morphological changes of mouse fibroblasts (L929 cell line) after contact with the surface of TiO2 films were evaluated with the use of a contrast-phase microscope, while their viability was tested by MTT colorimetric assay. The viability of cell line upon contact with the surface of nanocrystalline TiO2 film was comparable to the control sample. L929 cells had homogenous cytoplasm and were forming a confluent monofilm, while lysis and inhibition of cell growth was not observed. Moreover, the viability in contact with surface of examined films was high. This confirms non-cytotoxic effect of TiO2 film surface on mouse fibroblasts.

Titanium dioxide thin films doped with the same amount of neodymium were prepared using two different magnetron sputtering methods. Thin films of anatase structure were deposited with the aid of Low Pressure Hot Target Magnetron Sputtering, while rutile coatings were manufactured using High Energy Reactive Magnetron Sputtering process. The thin films composition was determined by energy dispersive spectroscopy and the amount of the dopant was equal to 1 at. %. Structural properties were evaluated using transmission electron microscopy and revealed that anatase films had fibrous structure, while rutile had densely packed columnar structure. Atomic force microscopy investigations showed that the surface of both films was homogenous and consisted of nanocrystalline grains. Photocatalytic activity was assessed based on the phenol decomposition. Results showed that both thin films were photocatalytically active, however coating with anatase phase decomposed higher amount of phenol. The transparency of both thin films was high and equal to ca. 80% in the visible wavelength range. The photoluminescence intensity was much higher in case of the coating with rutile structure.

Various properties of HfO2, such as hardness, corrosion, or electrical resistance, depend on the method and the conditions of deposition. In this work, a thorough comparison of scarcely investigated mechanical properties of HfO2 thin films deposited with different conditions of reactive magnetron sputtering process is presented. Four thin films were sputtered in processes that varied in plasma ignition method (continuous or sequential) and target–substrate distance. The structural characteristics of the HfO2 thin films were examined using Raman spectroscopy and X-ray diffraction measurements. Furthermore, the optoelectronic properties were determined based on transmittance and current–voltage characteristics. The mechanical properties of the HfO2 thin films were determined using nanoindentation and scratch test. In turn, the corrosion properties were determined by analyzing the voltametric curves. The transparent HfO2 thin films deposited in the continuous process are characterized by better corrosion resistance than the same layer formed in the sequential process, regardless of the target–substrate distance (8 cm or 12 cm). Furthermore, these samples are also characterized by the highest value of Young's modulus and scratch resistance. The combination of good corrosion and scratch resistance could contribute to the new application of HfO2 as a corrosion protective material. [ABSTRACT FROM AUTHOR]

Nonstoichiometric (Ti,Co)Ox coatings were prepared using gas-impulse magnetron sputtering (GIMS). The properties of coatings with 3 at.%, 19 at.%, 44 at.%, and 60 at.% Co content were compared to those of TiOx and CoOx films. Structural studies with the aid of GIXRD indicated the amorphous nature of (Ti,Co)Ox. The fine-columnar, homogeneous microstructure was observed on SEM images, where cracks were identified only for films with a high Co content. On the basis of XPS measurements, TiO2, CoO, and Co3O4 forms were found on their surface. Optical studies showed that these films were semi-transparent (T > 46%), and that the amount of cobalt in the film had a significant impact on the decrease in the transparency level. A shift in the absorption edge position (from 337 to 387 nm) and a decrease in their optical bandgap energy (from 3.02 eV to more than 2.60 eV) were observed. The hardness of the prepared films changed slightly (ca. 6.5 GPa), but only the CoOx film showed a slightly lower hardness value than the rest of the coatings (4.8 GPa). The described studies allowed partial classification of non-stoichiometric (Ti,Co)Ox thin-film materials according to their functionality. [ABSTRACT FROM AUTHOR]