1. Electron Mobility in γ-Al2O3/SrTiO3
- Author
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Christensen, Dennis Valbjørn, Frenkel, Y., Schütz, P., Trier, Felix, Wissberg, S., Claessen, R., Kalisky, B., Smith, A., Chen, Y. Z., and Pryds, Nini
- Abstract
One of the key issues in engineering oxide interfaces for electronic devices is achieving high electron mobility. SrTiO3-based interfaces with high electron mobility have gained a lot of interest due to the possibility of combining quantum phenomena with the many functionalities exhibited by SrTiO3. To date, the highest electron mobility (140 000 cm2/V s at 2 K) is obtained by interfacing perovskite SrTiO3 with spinel γ-Al2O3. The origin of the high mobility, however, remains poorly understood. Here, we investigate the scattering mechanisms limiting the mobility in γ-Al2O3/SrTiO3 at temperatures between 2 and 300 K and over a wide range of sheet carrier densities. For T>150 K, we find that the mobility is limited by longitudinal optical phonon scattering. For large sheet carrier densities (>8×1013 cm−2), the screened electron-phonon coupling leads to room-temperature mobilities up to μ∼12 cm2/V s. For 5 K
- Published
- 2018
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