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Light emission of nitride single quantum well light-emitting diodes operating in the range from 395 to 440 nm, grown by metal-organic vapor phase epitaxy, was investigated by means of photoluminescence (PL) and electroluminescence (EL) spectroscopies as functions of temperature and current injection level. The indium content of the active layers was varied via the growth temperature, which ranged from 770 to 810 °C. It was found that samples with higher indium contents (grown at lower temperatures) exhibit larger luminescence full widths at half maximum (FWHMs) and higher EL intensities. The larger FWHM points to a larger amplitude of the potential profile fluctuations, which suggests that these fluctuations may be useful for the increase in the device output power. In agreement with this result, the performed examination by PL measurements shows large thermal stability of the luminescence intensity for the lowest growth temperature sample. On the other hand, a nontrivial dependence of thermal stability on growth temperature suggests the additional involvement of different nonradiative recombination center concentrations in the individual samples, for example, because of dissimilar substrate qualities. [ABSTRACT FROM AUTHOR]

1. The interaction of ANF and ANF(24-28)OH with the agonist, Isoprenaline (ISO), and the antagonist, Propranolol (PRO), of beta-adrenergic receptor in the cardiovascular system in rat was investigated. 2. The studies showed that ANF and C-terminal fragment of ANF, ANF(24-28)OH, interfered with beta-adrenergic receptor. 3. This does not exclude the action of this pentapeptide on the other receptors.