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Author(s): T. Frigge [1]; B. Hafke [1]; T. Witte [1]; B. Krenzer [1]; C. Streubhr [1]; A. Samad Syed [1]; V. Miki Trontl [1]; I. Avigo [1]; P. Zhou [1]; [...]

The Si(lll)4 × 1-In surface is composed of metallic atomic wires, which undergo a transition into a charge density wave phase at a transition temperature (Tc) of 125 K. This Tc was reported recently to substantially increase upon the oxygen adsorption, for which the underlying mechanism is not understood. We investigate the structures of oxygen adsorbates on the Si(111)4 × 1 -In surface by scanning tunneling microscopy (STM) and density-functional theory calculations. We identify three distinct atomic-scale structures induced by the oxygen adsorption with high-resolution STM topography. The calculations find two energetically favorable adsorption sites on and between In zigzag chains, respectively. In conjunction with an additional adsorption configuration, where O is buried underneath the In chain, three stable structures are thus identified that reproduce very well the characteristic bias-dependent STM images. Experimentally, a switching between two specific adsorption structures is observed and is consistent with the structure models proposed. The structural distortions and the charge transfer of In atomic wires around the adsorbates are also characterized. This work provides a solid basis for the microscopic understanding of the intriguing oxygen impurity effect on the phase transition. [ABSTRACT FROM AUTHOR]

he In/Si(111) system reveals an anisotropy in the electrical conductivity and is a prototype system for atomic wires on surfaces. We use this system to study and tune the interwire interaction by adsorption of oxygen. Through rotational square four-tip transport measurements, both the parallel (σ||) and perpendicular (σ⊥) components are measured separately. The analysis of the I(V) curves reveals that σ⊥ is also affected by adsorption of oxygen, showing clearly an effective interwire coupling, in agreement with density-functional-theory-based calculations of the transmittance. In addition to these surface-state mediated transport channels, we confirm the existence of conducting parasitic space-charge layer channels and address the importance of substrate steps by performing the transport measurements of In phases grown on Si(111) mesa structures. [ABSTRACT FROM AUTHOR]

Lead-free heavy halogenido metalates are currently under intense investigation, as they show similarly promising semiconducting properties as their famous but toxic lead relatives. A major interest in this regard is the understanding and control of optical properties with the goal of designing highly efficient photoconducting materials. Here, we present two isostructural iodido pentelates (Hpyz) 3 E 2 I 9  ⋅ 2H 2 O (pyz=pyrazine; E=Sb, Bi). Both compounds are stable up to 100 °C. We observe an inverted order of band gap sizes, 1.91 eV and 1.98 eV for the antimony and bismuth compound, respectively, compared to similar pairs of compounds. We use DFT calculations to confirm that this surprising finding can be traced back to the presence of charge transfer excitations in both compounds., (© 2023 The Authors. ChemPlusChem published by Wiley-VCH GmbH.)

We discuss how to include our recently proposed thermopotentiostat technique [Deissenbeck et al. Phys. Rev. Lett. 2021, 126, 136803] into any existing ab initio molecular dynamics (AIMD) package. Using thermopotentiostat AIMD simulations in the canonical NVTΦ ensemble at a constant electrode potential, we compute the polarization bound charge and dielectric response of interfacial water from first principles.

Exploiting vibrational excitation for the dynamic control of material properties is an attractive goal with wide-ranging technological potential. Most metal-to-insulator transitions are mediated by few structural modes and are, thus, ideal candidates for selective driving toward a desired electronic phase. Such targeted navigation within a generally multi-dimensional potential energy landscape requires microscopic insight into the non-equilibrium pathway. However, the exact role of coherent inertial motion across the transition state has remained elusive. Here, we demonstrate mode-selective control over the metal-to-insulator phase transition of atomic indium wires on the Si(111) surface, monitored by ultrafast low-energy electron diffraction. We use tailored pulse sequences to individually enhance or suppress key phonon modes and thereby steer the collective atomic motion within the potential energy surface underlying the structural transformation. Ab initio molecular dynamics simulations demonstrate the ballistic character of the structural transition along the deformation vectors of the Peierls amplitude modes. Our work illustrates that coherent excitation of collective modes via exciton-phonon interactions evades entropic barriers and enables the dynamic control of materials functionality., (© 2022 Author(s).)

We investigated the atomic scale electronic phase separation emerging from a quasi-1D charge-density-wave (CDW) state of the In atomic wire array on a Si(111) surface. Spatial variations of the CDW gap and amplitude are quantified for various interfaces of metallic and insulating CDW domains by scanning tunneling microscopy and spectroscopy (STS). The strong anisotropy in the metal-insulator junctions is revealed with an order of magnitude difference in the interwire and intrawire junction lengths of 0.4 and 7 nm, respectively. The intrawire junction length is reduced dramatically by an atomic scale impurity, indicating the tunability of the metal-insulator junction in an atomic scale. Density functional theory calculations disclose the dynamical nature of the intrawire junction formation and tunability.

Semiconducting nanomaterials synthesized using wet chemical techniques play an important role in emerging optoelectronic and photonic technologies. Controlling the surface chemistry of the nano building blocks and their interfaces with ligands is one of the outstanding challenges for the rational design of these systems. We present an integrated theoretical and experimental approach to characterize, at the atomistic level, buried interfaces in solids of InAs nanoparticles capped with Sn 2 S 6 4- ligands. These prototypical nanocomposites are known for their promising transport properties and unusual negative photoconductivity. We found that inorganic ligands dissociate on InAs to form a surface passivation layer. A nanocomposite with unique electronic and transport properties is formed, that exhibits type II heterojunctions favourable for exciton dissociation. We identified how the matrix density, sulfur content and specific defects may be designed to attain desirable electronic and transport properties, and we explain the origin of the measured negative photoconductivity of the nanocrystalline solids.

We directly show how impurity atoms induce the condensation of a representative electronic phase, the charge density wave (CDW) phase, in atomic scale with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense the CDW locally above the pristine transition temperature. More interestingly, the CDW along the wires is induced not by a single atomic impurity but by the cooperation of multiple impurities. First-principles calculations disclose the mechanism of the cooperation as the coherent superposition of the local lattice strain induced by impurities, stressing the coupled electronic and lattice degrees of freedom for the CDW. This opens the possibility of the strain engineering over electronic phases of atomic-scale systems.