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Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity., Comment: 13 pages, 3 figures plus supplemental information

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.

A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The voltage contrast behavior is characterized by comparing measured voltage contrast with calculated voltage contrast from two electrostatic models. Measured voltage contrast was found to agree closely with the calculated voltage contrast, demonstrating that voltage contrast in PEEM can be used to probe local voltage information in microelectronic devices in a non-intrusive fashion., Comment: 26 pages, 8 figures

Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence, Comment: 32 pages, 7 figures

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene materials to desired substrate and device geometries. Since the method is purely additive, it exposes graphene (or other functional materials) to no chemical preparation or lithographic steps, providing greater experimental control over device environment for reproducibility and for studies of fundamental transport mechanisms. Finally, the transport properties of the graphene devices on the PET substrate demonstrate the non-universality of minimum conductivity and the incompleteness of the current transport theory., Comment: 10 pages, 3 figures

Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically-resolved motion on a thin film surface under large applied current (10e5 Amp/sqare cm). The magnitude of the momentum transfer between current carriers and atoms in the fluctuating structure is at least five to fifteen times (plus or minus one sigma range) larger than for freely diffusing adatoms. The corresponding changes in surface resistivity will contribute significant fluctuation signature to nanoscale electronic properties., Comment: 15 pages

We analyze correlations in step-edge fluctuations using the Bortz-Kalos-Lebowitz kinetic Monte Carlo algorithm, with a 2-parameter expression for energy barriers, and compare with our VT-STM line-scan experiments on spiral steps on Pb(111). The scaling of the correlation times gives a dynamic exponent confirming the expected step-edge-diffusion rate-limiting kinetics both in the MC and in the experiments. We both calculate and measure the temperature dependence of (mass) transport properties via the characteristic hopping times and deduce therefrom the notoriously-elusive effective energy barrier for the edge fluctuations. With a careful analysis we point out the necessity of a more complex model to mimic the kinetics of a Pb(111) surface for certain parameter ranges., Comment: 10 pages, 9 figures, submitted to Physical Review B

In a recent paper [Ferrari et al., Phys. Rev. E 69, 035102(R) (2004)], the scaling law of the fluctuations of the step limiting a crystal facet has been computed as a function of the facet size. Ferrari et al. use rigorous, but physically rather obscure, arguments. Approaching the problem from a different perspective, we rederive more transparently the scaling behavior of facet edge fluctuations as a function of time. Such behavior can be scrutinized with STM experiments and with numerical simulations., Comment: 3 pages

Although formal vocational training in technical high schools or community-based job placements provides opportunities for adolescents with disabilities, educators need to consider a broader continuum of vocational training options for these students. Entrepreneurial options such as school-based businesses, internships, and apprenticeships may serve to remedy many of the educational, personal, and rural issues that can contribute to poor vocational preparation, a loss of autonomy, and reduced independence for disabled students. Formal entrepreneurial programs strengthen the ties between schools and community businesses, maximize use of limited community resources, and in the long run, improve students' sense of self-efficacy and personal control in their lives. However, these programs require a significant amount of skill and commitment on the part of special educators and school administrators. Two tables summarize the career education competencies students should acquire at elementary and junior high levels as a basis for entrepreneurial training during adolescence. Educational objectives and desirable economic and job-related knowledge and skills are listed for the domains of the individual, family, community, town, region, and nation at the elementary level, and for the domains of personal, business, and global economics at the junior high level. A third table summarizes objectives and skills of the entrepreneurial curriculum suggested for adolescents with disabilities. Contains 12 references. (TD)