Search

ZrSiS has been identified as an exemplary Dirac nodal-line semimetal, in which the Dirac band crossings extend along a closed loop in momentum space. Recently, the topology of the Fermi surface of ZrSiS was uncovered in great detail by quantum oscillation studies. For a magnetic field along the tetragonal $c$ axis, a rich frequency spectrum was observed stemming from the principal electron and hole pockets, and multiple magnetic breakdown orbits. In this work we use uniaxial strain as a tuning parameter for the Fermi surface and the low energy excitations. We measure the magnetoresistance of a single crystal under tensile (up to 0.34 %) and compressive (up to -0.28 %) strain exerted along the $a$ axis and in magnetic fields up to 30 T. We observe a systematic weakening of the peak structure in the Shubnikov-de Haas frequency spectrum upon changing from compressive to tensile strain. This effect may be explained by a decrease in the effective quantum mobility upon decreasing the $c/a$ ratio, which is corroborated by a concurrent increase in the Dingle temperature., Comment: 18 pages, 11 figures, to be published in Physical Review B

We report a detailed Shubnikov-de Haas (SdH) study on the Weyl type-II semimetal WTe2 in magnetic fields up to 29 T. By using the SdH results to guide our density functional theory calculations, we are able to accurately determine its Fermi surface by employing a moderate Hubbard U term, which is an essential step in explaining the unusual electronic properties of this much studied material. In addition to the fundamental orbits, we observe magnetic breakdown, which can consistently be explained within the model of a Russian-doll-nested Fermi surface of electron and hole pockets. The onset of magnetic breakdown in WTe2 is solely determined by impurity damping in contrast to magnetic breakdown scenarios in other metallic systems., Comment: 5 pages, 4 figures

Quantum oscillations in resistivity and magnetization at high magnetic fields are a macroscopic fingerprint of the energy quantization due to the cyclotron motion of quasiparticles. In a thin Weyl semimetal, a unique thickness dependent Weyl-orbit quantum oscillation was proposed to exist, originating from a nonlocal cyclotron orbit via the electron tunneling between the top and bottom Fermi-arc surface states. Here, untwinned and high crystalline Weyl metal SrRuO$_3$ thin films with different thicknesses were grown on miscut SrTiO$_3$ (001) substrates. Magneto-transport measurements were carried out in magnetic fields up to 35 T, and quantum oscillations with different frequencies were observed and compared to the calculated band structure. In particular, we discovered a frequency $F \approx$ 30 T at low temperatures and above 3 T that corresponds to a small Fermi pocket with a light effective mass. Its oscillation amplitude appears to be at maximum for film thicknesses in a range of 10 to 20 nm, and the phase of the oscillation exhibits a systematic change with the film thickness. After isolating the well separated frequencies, the constructed Landau fan diagram shows an unusual concave downward curvature in the 1/$\mu_0H_n$-$n$ curve, where $n$ is the Landau level index. Based on the rigorous analysis of the thickness and field-orientation dependence of the quantum oscillations, the oscillation with $F \approx$ 30 T is attributed to be of surface origin, which is related to the Fermi-arc surface state originating from non-overlapping Weyl nodes projected on the film's surface plane. Those findings can be understood within the framework of the Weyl-orbit quantum oscillation effect with non-adiabatic corrections., Comment: 27 pages, 6 figures

The recently discovered material Cs$_3$Fe$_2$Br$_9$ contains Fe$_2$Br$_9$ bi-octahedra forming triangular layers with hexagonal stacking along the $c$ axis. In contrast to isostructural Cr-based compounds, the zero-field ground state is not a nonmagnetic $S=0$ singlet-dimer state. Instead, the Fe$_2$Br$_9$ bi-octahedra host semiclassical $S=5/2$ Fe$^{3+}$ spins with a pronounced easy-axis anisotropy along $c$ and interestingly, the intra-dimer spins are ordered ferromagnetically. The high degree of magnetic frustration due to (various) competing intra- and inter-dimer couplings leads to a surprisingly rich magnetic phase diagram. Already the zero-field ground state is reached via an intermediate phase, and the high-field magnetization and thermal expansion data for $H\parallel c$ identify ten different ordered phases. Among them are phases with constant magnetization of 1/3, respectively 1/2 of the saturation value, and several transitions are strongly hysteretic with pronounced length changes reflecting strong magnetoelastic coupling., Comment: 11 pages, 12 figures (minor corrections and 3 additional have been included in V3)

The Seebeck coefficient (thermopower) $S$ of the cuprate superconductor La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ was measured across its doping phase diagram (from $p = 0.12$ to $p = 0.25$), at various temperatures down to $T \simeq 2$ K, in the normal state accessed by suppressing superconductivity with a magnetic field up to $H = 37.5$ T. The magnitude of $S/T$ in the $T=0$ limit is found to suddenly increase, by a factor $\simeq 5$, when the doping is reduced below $p^{\star} = 0.23$, the critical doping for the onset of the pseudogap phase. This confirms that the pseudogap phase causes a large reduction of the carrier density $n$, consistent with a drop from $n = 1 + p$ above $p^{\star}$ to $n = p$ below $p^{\star}$, as previously inferred from measurements of the Hall coefficient, resistivity and thermal conductivity. When the doping is reduced below $p = 0.19$, a qualitative change is observed whereby $S/T$ decreases as $T \to 0$, eventually to reach negative values at $T=0$. In prior work on other cuprates, negative values of $S/T$ at $T \to 0$ were shown to result from a reconstruction of the Fermi surface caused by charge-density-wave (CDW) order. We therefore identify $p_{\rm CDW} \simeq 0.19$ as the critical doping beyond which there is no CDW-induced Fermi surface reconstruction. The fact that $p_{\rm CDW}$ is well separated from $p^{\star}$ reveals that there is a doping range below $p^{\star}$ where the transport signatures of the pseudogap phase are unaffected by CDW correlations, as previously found in YBa$_2$Cu$_3$O$_y$ and La$_{2-x}$Sr$_x$CuO$_4$., Comment: Present version includes a comparison with new x-ray data on Nd-LSCO by Gupta et al., arXiv:2012.08450. 13 pages, 12 figures, includes SM file

Five transport coefficients of the cuprate superconductor Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ were measured in the normal state down to low temperature, reached by applying a magnetic field (up to 66T) large enough to suppress superconductivity. The electrical resistivity, Hall coefficient, thermal conductivity, Seebeck coefficient and thermal Hall conductivity were measured in two overdoped single crystals, with La concentration $x = 0.2$ ($T_{\rm c}=18$K) and $x = 0.0$ ($T_{\rm c}=10$K). The samples have dopings $p$ very close to the critical doping $p^{\star}$ where the pseudogap phase ends. The resistivity displays a linear dependence on temperature whose slope is consistent with Planckian dissipation. The Hall number $n_{\rm H}$ decreases with reduced $p$, consistent with a drop in carrier density from $n = 1+p$ above $p^{\star}$ to $n=p$ below $p^{\star}$. This drop in $n_{\rm H}$ is concomitant with a sharp drop in the density of states inferred from prior NMR Knight shift measurements. The thermal conductivity satisfies the Wiedemann-Franz law, showing that the pseudogap phase at $T = 0$ is a metal whose fermionic excitations carry heat and charge as do conventional electrons. The Seebeck coefficient diverges logarithmically at low temperature, a signature of quantum criticality. The thermal Hall conductivity becomes negative at low temperature, showing that phonons are chiral in the pseudogap phase. Given the observation of these same properties in other, very different cuprates, our study provides strong evidence for the universality of these five signatures of the pseudogap phase and its critical point., Comment: Added references

Unambiguous and complete determination of the Fermi surface is a primary step in understanding the electronic properties of topical metals and semi-metals, but only in a relatively few cases has this goal been realized. In this work, we present a systematic high-field quantum oscillation study up to 35 T on ZrSiS, a textbook example of a nodal-line semimetal with only linearly dispersive bands crossing the Fermi energy. The topology of the Fermi surface is determined with unprecedented precision and all pockets are identified by comparing the measured angle dependence of the quantum oscillations to density functional theory calculations. Comparison of the Shubnikov-de Haas and de Haas-van Alphen oscillations at low temperatures and analysis of the respective Dingle plots reveal the presence of significantly enhanced scattering on the electron pocket. Above a threshold field that is aligned along the c-axis of the crystal, the specific cage-like Fermi surface of ZrSiS allows for electron-hole tunneling to occur across finite gaps in momentum space leading to quantum oscillations with a complex frequency spectrum. Additional high-frequency quantum oscillations signify magnetic breakdown orbits that encircle the entire Dirac nodal loop. We suggest that the persistence of quantum oscillations in the resistivity to high temperatures is caused by Stark interference between orbits of nearly equal masses., Comment: 14 pages, 13 figures

We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moir\'e modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.

We report on negative thermal expansion (NTE) in the high-field, half-magnetization plateau phase of the frustrated magnetic insulator CdCr2O4. Using dilatometry, we precisely map the phase diagram at fields of up to 30T, and identify a strong NTE associated with the collinear half-magnetization plateau for B > 27T. The resulting phase diagram is compared with a microscopic theory for spin-lattice coupling, and the origin of the NTE is identified as a large negative change in magnetization with temperature, coming from a nearly-localised band of spin excitations in the plateau phase. These results provide useful guidelines for the discovery of new NTE materials., Comment: 6 pages, 2 figures

The motivation to search for signatures of superconductivity in Weyl semi-metals and other topological phases lies in their potential for hosting exotic phenomena such as nonzero-momentum pairing or the Majorana fermion, a viable candidate for the ultimate realization of a scalable quantum computer. Until now, however, all known reports of superconductivity in Weyl semimetals have arisen through surface contact with a sharp tip, focused ion-beam surface treatment or the application of high pressures. Here, we demonstrate the observation of superconductivity in single crystals, even an as-grown crystal, of the Weyl semi-metal tantalum phosphide (TaP), at ambient pressure. A superconducting transition temperature, $Tc$, varying between 1.7 and 5.3 K, is observed in different samples, both as-grown and microscopic samples processed with focused ion beam (FIB) etching. Our data show that the superconductivity present in the as-grown crystal is inhomogeneous yet exists in the bulk. For samples fabricated with FIB, we observe, in addition to the bulk superconductivity, a second superconducting state that resides on the sample surface. Through measurements of the characteristic fields as a function of temperature and angle, we are able to confirm the dimensionality of the two distinct superconducting phases., Comment: 17 pages, 3 figures

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields.

We report a study of quantum oscillations in the high-field magneto-resistance of the nodal-line semimetal HfSiS. In the presence of a magnetic field up to 31 T parallel to the c-axis, we observe quantum oscillations originating both from orbits of individual electron and hole pockets, and from magnetic breakdown between these pockets. In particular, we find an oscillation associated with a breakdown orbit enclosing one electron and one hole pocket in the form of a `figure of eight'. This observation represents an experimental confirmation of the momentum space analog of Klein tunneling. When the c-axis and the magnetic field are misaligned with respect to one another, this oscillation rapidly decreases in intensity. Finally, we extract the cyclotron masses from the temperature dependence of the oscillations, and find that the mass of the 'figure of eight' orbit corresponds to the sum of the individual pockets, consistent with theoretical predictions for Klein tunneling in topological semimetals., Comment: 6 pages, 4 figures

Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance., Comment: Manuscript including supplemental material

Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs.

In hole-doped cuprates there is now compelling evidence that inside the pseudogap phase, charge order breaks translational symmetry leading to a reconstruction of the Fermi surface. In $YBa_2Cu_3O_y$ charge order emerges in two steps: a 2D order found at zero field and at high temperature inside the pseudogap phase, and a 3D order that is superimposed below the superconducting transition $T_c$ when superconductivity is weakened by a magnetic field. Several issues still need to be addressed such as the effect of disorder, the relationship between those charge orders and their respective impact on the Fermi surface. Here, we report high magnetic field sound velocity measurements of the 3D charge order in underdoped $YBa_2Cu_3O_y$ in a large doping range. We found that the 3D charge order exists over the same doping range as its 2D counterpart, indicating an intimate connection between the two distinct orders. Moreover, we argue that the Fermi surface is reconstructed above the onset temperature of 3D charge order., Comment: 25 pages: Main + SI

When a magnetic field confines the carriers of a Fermi sea to their lowest Landau level, electron-electron interactions are expected to play a significant role in determining the electronic ground state. Graphite is known to host a sequence of magnetic field-induced states driven by such interactions. Three decades after their discovery, thermodynamic signatures of these instabilities are still elusive. Here, we report the first detection of these transitions with sound velocity. We find that the phase transition occurs in the vicinity of a magnetic field at which at least one of the Landau levels cross the Fermi energy. The evolution of elastic constant anomalies with temperature and magnetic field draws a detailed phase diagram which shows that the ground state evolves in a sequence of thermodynamic phase transitions.Our analysis indicates that electron-electron interaction is not the sole driving force of these transitions and that lattice degrees of freedom play an important role., Comment: 6 pages, supplementary materials available on request

The topological properties of fermions arise from their low-energy Dirac-like band dispersion and associated chiralities. Initially confined to points, extensions of the Dirac dispersion to lines and even loops have now been uncovered and semimetals hosting such features have been identified. However, experimental evidence for the enhanced correlation effects predicted to occur in these topological semimetals has been lacking. Here, we report a quantum oscillation study of the nodal loop semimetal ZrSiS in high magnetic fields that reveals significant enhancement in the effective mass of the quasiparticles residing near the nodal loop. Above a threshold field, magnetic breakdown occurs across gaps in the loop structure with orbits that enclose different windings around its vertices, each winding accompanied by an additional \pi-Berry phase. The amplitudes of these breakdown orbits exhibit an anomalous temperature dependence. These findings demonstrate the emergence of novel, correlation-driven physics in ZrSiS associated with the Dirac-like quasiparticles., Comment: 20 pages, 4 figures

We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out most complicated mechanisms that could give rise to the observed LMR. At low temperature, quantum oscillations are superimposed onto the LMR. Both, the featureless LMR at high $T$ and the quantum oscillations at low $T$ follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor $\alpha$ that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond $\nu=1$ that likely originate from a different transport mechanism for the composite fermions.

Quantum corrections to charge transport can give rise to an oscillatory magnetoconductance, typically observed in mesoscopic samples with a length shorter than or comparable with the phase coherence length. Here, we report the observation of magnetoconductance oscillations periodic in magnetic field with an amplitude of the order of $e^2/h$ in macroscopic samples of Highly Oriented Pyrolytic Graphite (HOPG). The observed effect emerges when all carriers are confined to their lowest Landau levels. We argue that this quantum interference phenomenon can be explained by invoking moir\'e superlattices with a discrete distribution in periodicity. According to our results, when the magnetic length $\ell_B$, the Fermi wave length $\lambda_F$ and the length scale of fluctuations in local chemical potential are comparable in a layered conductor, quantum corrections can be detected over centimetric length scales., Comment: Supplementary material on request

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought., Comment: 6 pages, 4 figures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley., Comment: 26 pages, 13 figures

The electrical resistivity $\rho$ and Hall coefficient R$_H$ of the tetragonal single-layer cuprate Nd-LSCO were measured in magnetic fields up to $H = 37.5$ T, large enough to access the normal state at $T \to 0$, for closely spaced dopings $p$ across the pseudogap critical point at $p^\star = 0.235$. Below $p^\star$, both coefficients exhibit an upturn at low temperature, which gets more pronounced with decreasing $p$. Taken together, these upturns show that the normal-state carrier density $n$ at $T = 0$ drops upon entering the pseudogap phase. Quantitatively, it goes from $n = 1 + p$ at $p = 0.24$ to $n = p$ at $p = 0.20$. By contrast, the mobility does not change appreciably, as revealed by the magneto-resistance. The transition has a width in doping and some internal structure, whereby R$_H$ responds more slowly than $\rho$ to the opening of the pseudogap. We attribute this difference to a Fermi surface that supports both hole-like and electron-like carriers in the interval $0.2 < p < p^\star$, with compensating contributions to R$_H$. Our data are in excellent agreement with recent high-field data on YBCO and LSCO. The quantitative consistency across three different cuprates shows that a drop in carrier density from $1 + p$ to $p$ is a universal signature of the pseudogap transition at $T=0$. We discuss the implication of these findings for the nature of the pseudogap phase., Comment: 11 pages, 12 figures

We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor from a two-dimensional topological insulator. At high carrier concentrations we observe a quantized Hall conductivity up to 60\,K with energy gaps between Landau Levels of the order of 25\,meV, in good agreement with the Landau Level spectrum obtained from $\mathbf{k\cdot p}$-calculations. Using the scaling approach for the plateau-plateau transition at $\nu=2\rightarrow 1$, we find the scaling coefficient $\kappa =0.45 \pm 0.04$ to be consistent with the universality of scaling theory and we do not find signs of increased electron-phonon interaction to alter the scaling even at these elevated temperatures. Comparing the high temperature limit of the quantized Hall resistance in HgTe quantum wells with a finite band gap with room temperature experiment in graphene, we find the energy gaps at the break-down of the quantization to exceed the thermal energy by the same order of magnitude.

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality., Comment: v2: updated with some modifications/clarifications

We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors $\nu=\pm1$ and we observe an enhanced energy gap. In the higher levels, the valley degeneracy is removed at odd filling factors while spin polarized states are formed at even $\nu$. Although the observation of odd filling factors in the higher levels points towards the spontaneous origin of the splitting, we find that the main contribution to the gap at $\nu= -4,-8$, and $-12$ is due to the Zeeman energy., Comment: 5 pages, 4 figures

We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With help of Lifshitz-Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For $(x,y)=(0.50,1.3)$ the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with $g_s = 70$ or $-54$. Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40~$\mu$m) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32~\%., Comment: 16 pages, 5 figures, accepted for publication in Solid State Communications

The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization or a nontrivial Berry phase, such as in topological insulator surface states. For the three dimensional topological insulators a large and linear magnetoresistance is often used as indication for underlying non-trivial topology, although the origin of this effect has not yet been established. Here, we observe a large magnetoresistance in the conducting bulk state of Bi$_2$Te$_3$. We show that this type of large magnetoresistance is due to the competition between helical spin-momentum locking (i.e. spin rotates with momentum direction) and the unidirectional spin alignment by an applied magnetic field. Warping effects are found to provide the (quasi) linear dependence on magnetic field. We provide a quantitative model for the helicity breaking induced magnetoresistance that can be applied to a vast range of materials, surfaces or interfaces with weak to strong spin-orbit interactions, such as the contemporary oxide interfaces, bulk Rashba systems, and topological insulator surface states., Comment: 11 pages, 3 figures

The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering., Comment: 7 pages, 4 figures

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band-structure and large spin-orbit gap. Recently it was shown that copper intercalated Bi2Se3 becomes superconducting and it was suggested as a realization of a topological superconductor (TSC). Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved photoemission spectroscopy (ARPES) to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes 2D-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3., Comment: 5 pages, 5 figures

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized., Comment: 5 pages, 5 figures, corrected typo in author's name

We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitatively tracks the Fermi temperature of the 3D Fermi surface at \Gamma-point as the carrier concentration changes by two orders of magnitude (10$^{17}$ to 10$^{19}$cm$^{-3}$). In high magnetic fields, the Nernst response displays giant quantum oscillations indicating that this feature is not exclusive to compensated semi-metals. A comprehensive analysis of the Landau Level spectrum firmly establishes a large $g$-factor in this material and a substantial decrease of the Fermi energy with increasing magnetic field across the quantum limit. Thus, the presence of bulk carriers significantly affects the spectrum of the intensively debated surface states in Bi2Se3 and related materials., Comment: 10 pages, 9 figures

We study non-linear transport phenomena in a high-mobility bilayer system with two closely spaced populated electronic subbands in a perpendicular magnetic field. For a moderate direct current excitation, we observe zero-differential-resistance states with a characteristic 1/B periodicity. We investigate, both experimentally and theoretically, the Hall field-induced resistance oscillations which modulate the high-frequency magneto-intersubband oscillations in our system if we increase the current. We also observe and describe the influence of direct current on the magnetoresistance in the presence of microwave irradiation., Comment: 8 pages, 6 figures

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at \nu=0 made up by both electrons and holes., Comment: 5 pages, 6 figures

Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior., Comment: 6 pages, 8 figures. Accepted to Physical Review B

The influence of microwave irradiation on dissipative and Hall resistance in high-quality bilayer electron systems is investigated experimentally. We observe a deviation from odd symmetry under magnetic field reversal in the microwave-induced Hall resistance $\Delta R_{xy}$ whereas the dissipative resistance $\Delta R_{xx}$ obeys even symmetry. Studies of $\Delta R_{xy}$ as a function of the microwave electric field and polarization exhibit a strong and non-trivial power and polarization dependence. The obtained results are discussed in connection to existing theoretical models of microwave-induced photoconductivity., Comment: 8 pages, 5 figures

We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems., Comment: 4 pages, 4 figures

Experimental studies of magnetoresistance in high-mobility wide quantum wells reveal oscillations which appear with an increase in temperature to 10 K and whose period is close to that of Shubnikov-de Haas oscillations. The observed phenomenon is identified as magnetointersubband oscillations caused by the scattering of electrons between two occupied subbands and the third subband which becomes occupied as a result of thermal activation. These small-period oscillations are less sensitive to thermal suppression than the largeperiod magnetointersubband oscillations caused by the scattering between the first and the second subbands. Theoretical study, based on consideration of electron scattering near the edge of the third subband, gives a reasonable explanation of our experimental findings., Comment: 9 pages, 5 figures

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS., Comment: 5 pages, 4 figures

We report on temperature-dependent magnetoresistance measurements in balanced double quantum wells exposed to microwave irradiation for various frequencies. We have found that the resistance oscillations are described by the microwave-induced modification of electron distribution function limited by inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With increasing temperature, a strong deviation of the oscillation amplitudes from the behavior predicted by this mechanism is observed, presumably indicating a crossover to another mechanism of microwave photoresistance, with similar frequency dependence. Our analysis shows that this deviation cannot be fully understood in terms of contribution from the mechanisms discussed in theory., Comment: 7 pages, 4 figures

Magnetoresistance of two-dimensional electron systems with several occupied subbands oscillates owing to periodic modulation of the probability of intersubband transitions by the quantizing magnetic field. In addition to previous investigations of these magneto-intersubband (MIS) oscillations in two-subband systems, we report on both experimental and theoretical studies of such a phenomenon in three-subband systems realized in triple quantum wells. We show that the presence of more than two subbands leads to a qualitatively different MIS oscillation picture, described as a superposition of several oscillating contributions. Under a continuous microwave irradiation, the magnetoresistance of triple-well systems exhibits an interference of MIS oscillations and microwaveinduced resistance oscillations. The theory explaining these phenomena is presented in the general form, valid for an arbitrary number of subbands. A comparison of theory and experiment allows us to extract temperature dependence of quantum lifetime of electrons and to confirm the applicability of the inelastic mechanism of microwave photoresistance for the description of magnetotransport in multilayer systems., Comment: 10 pages, 5 figures

We report on the observation of microwave-induced resistance oscillations associated with the fractional ratio n/m of the microwave irradiation frequency to the cyclotron frequency for m up to 8 in a two-dimensional electron system with high electron density. The features are quenched at high microwave frequencies independent of the fractional order m. We analyze temperature, power, and frequency dependencies of the magnetoresistance oscillations and discuss them in connection with existing theories., Comment: 5 pages, 5 figures

We observe oscillatory magnetoresistance in double quantum wells under microwave irradiation. The results are explained in terms of the influence of subband coupling on the frequency-dependent photoinduced part of the electron distribution function. As a consequence, the magnetoresistance demonstrates the interference of magneto-intersubband oscillations and conventional microwave- induced resistance oscillations., Comment: 5 pages, 3 figures