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The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)3 solar cell at ambient temperatures and under practical solar concentration. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a non-equilibrium photocurrent at higher fluence in light J-V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence are shown to compete with a gradual red shift in the PL peak energy as photo induced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a non-equilibrium carrier distribution are also shown to be distinct from simple lattice heating. This results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.

Prototypes for hot-carrier solar cells based on type-II InAs/AlAsSb multiple quantum wells are examined for AC photoconductivity as a function of lattice temperature and photoexcitation energy to determine the photoexcited charge carrier transport. These samples previously exhibit an excitation energy onset of a metastable regime in their short time charge carrier dynamics that potentially improves their applicability for hot-carrier photovoltaic applications. The transport results illustrate that the AC photoconductivity is larger in the dynamic regime corresponding to the metastability as a result of higher excitation photocarrier densities. In this excitation regime, the AC photoconductivity is accompanied by slightly lower carrier mobility, arising from the plasma-like nature of carriers scattered by Auger recombination. Outside of this regime, higher mobility is observed as a result of a lower excitation density that is more readily achievable by solar concentration. Additionally, at ambient temperatures, more scattering events are accompanied by slightly lower mobility, but the excitation dependence indicates that this is accompanied by an ambipolar diffusion length that is greater than half a micron. These transport properties are consistent with good quality inorganic elemental and III-V semiconductor solar cells and far exceed those of novel materials. The transport results complement the dynamics observed in type-II InAs/AlAsSb and can guide the design of hot-carrier solar cells based on these and related materials., Comment: 7 pages, 5 figures, journal preprint

Temperature dependent (4K-300K) photoluminescence and transmission spectra are analyzed to study the effect of changing the different components of a perovskite compound, be it A, B, or X. Four different films are compared: FAMAPbSnI3, FAPbI3, FAMAPbI3, and FAPbBr3. The low temperature results highlight the changes that occur especially, underlying ones that are easily masked at room temperature. The overall Stokes shift is of similar magnitude at room temperature for the 3 Pb only based samples. This is governed by the interaction strength GammaLO, phonon energy ELO, and the exciton binding energy Eex. One exception to this behavior is the Sn-based FAMAPbSnI3 film which shows a lack of Stokes shift between the absorption and photoluminescence. However,the strong absorption (more than 100 meV) below the band gap is indicative of an excitonic feature that has a large density of states. Transient absorption measurements confirm the trends observed in continuous wave (CW) measurements, the 3 Pb only films all show the convolution of an excitonic feature within 20 meV of the band gap as a contributing factor to the photobleach along with a region of high energy PIA. However, the behavior for the Sn-based film is notably different (just as in the CW measurements) with an unusual low energy PIA and a lack of high energy PIA. The large low energy PIA is attributed to the large sub band gap absorption observed in the CW transmission/absorption measurements. Notably regardless of interchanging components, the slow cooling of carriers in metal-halide perovsites shows little effect of GammaLO, ELO, and Eex. As such, here it is proposed: while the initial cooling of carriers is attributed to LO phonons, the overall cooling of carriers is dominated by the intrinsic low thermal conductivity of all metal-halide perovskites which limits the dissipation of acoustic phonons in these systems., Comment: 12 pages, 6 Figures

InAs/AlAs$_{x}$Sb$_{1-x}$ quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon-mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K photoluminescence measurements are consistent with type-I quantum wells that exhibit hole localization associated with alloy/interface fluctuations. At elevated temperatures hole delocalization reveals the true type-II band alignment; where it is observed that inhibited radiative recombination due to the spatial separation of the charge carriers dominates hot carrier relaxation. This decoupling of phonon-mediated relaxation results in robust hot carriers at higher temperatures even at lower excitation powers. These results indicate type-II quantum wells offer potential as practical hot carrier systems., Comment: 7 pages, 6 figures, submitted to "Progress in Photovoltaics: Research and Applications"

We present evidence of magnetic ordering in type-II (Zn, Mn) Te quantum dots. This ordering is attributed to the formation of bound magnetic polarons caused by the exchange interaction between the strongly localized holes and Mn within the dots. In our photoluminescence studies, the magnetic polarons are detected at temperatures up to ~ 200 K, with a binding energy of ~ 40 meV. In addition, these dots display an unusually small Zeeman shift with applied field (2 meV at 10 T). This behavior is explained by a small and weakly temperature-dependent magnetic susceptibility due to anti-ferromagnetic coupling of the Mn spins.

The magneto-photoluminescence of type-II (ZnMn)Te quantum dots is presented. As a result of the type-II band alignment Aharonov-Bohm (AB) oscillations in the photoluminescence intensity are evident, confirming previous predictions for the suitability of this geometry to control the optical Aharonov-Bohm effect in semiconductor systems. Moreover, the system demonstrates an interesting interplay between the AB effect and the spin polarization in diluted magnetic semiconductor quantum dots. The intensity of the AB oscillations increases with both magnetic field and the degree of optical polarization, indicating the suppression of spin fluctuations improves the coherence of the system., Comment: submitted to PRB

Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge this is the highest temperature at which the AB effect has been observed in semiconductor structures.

Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samples having: 1) no growth interrupts (short range well-width fluctuations), and 2) intentional growth interrupts (long range monolayer well-width differences). Only bound-to-continuum internal transitions of the negatively charged trion are observed for samples of type 1. In contrast, a feature on the high field (low energy) side of electron cyclotron resonance is seen for samples of type 2 with well widths of 14.1 and 8.4 nm. This feature is attributed to a bound-to-bound transition of the spin-triplet with non-zero oscillator strength resulting from breaking of translational symmetry., Comment: 16 pages, 3 figures, submitted to Physical Review B