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We study the causal structure of the quark propagator with the spectral DSE. The spectral gap equation is solved with the input of the spectral representation of the gluon and a causal STI-construction for the quark-gluon vertex. The latter includes a potential infrared enhancement of the vertex strength of the classical tensor structure that accommodates for the physical strength of chiral symmetry breaking. We find a critical vertex strength, below which the quark has a K\"all\'en-Lehmann representation. While the nature of the first singularity does not change above the critical strength, we find that the quark propagator features at least two additional pairs of complex conjugate poles that are located approximately at the sum of quark pole mass and peak position of the quark-gluon coupling. These additional poles lead to violations of causality, if they persist in $S$-matrix elements. While the vertex strength of the classical tensor structure in full QCD is below the critical one, that of commonly used vertex models, which rely solely on the classical vertex structure, is typically above it. Finally, we discuss how these additional poles could be avoided in full QCD, where part of chiral symmetry breaking is generated by the other tensor structures in the quark-gluon vertex., Comment: 12 pages, 10 figures

We compute the bound state properties of three-dimensional scalar $\phi^4$ theory in the broken phase. To this end, we extend the recently developed technique of spectral Dyson-Schwinger equations to solve the Bethe-Salpeter equation and determine the bound state spectrum. We employ consistent truncations for the two-, three- and four-point functions of the theory that recover the scaling properties in the infinite coupling limit. Our result for the mass of the lowest-lying bound state in this limit agrees very well with lattice determinations., Comment: 15 pages, 16 figures

We compute non-perturbative spectral functions in a scalar $\phi^4$-theory in three spacetime dimensions via the spectral functional renormalisation group. This approach allows for the direct, manifestly Lorentz covariant computation of correlation functions in Minkowski spacetime, including a physical on-shell renormalisation. We present numerical results for the spectral functions of the two- and four-point correlation functions for different values of the coupling parameter. These results agree very well with those obtained from another functional real-time approach, the spectral Dyson-Schwinger equation., Comment: 22 pages, 13 figures

As part of the GRAVITY$^{+}$ project, the near-infrared beam combiner GRAVITY and the VLTI are currently undergoing a series of significant upgrades to further improve the performance and sky coverage. The instrumental changes will be transformational, and for instance uniquely position GRAVITY to observe the broad line region of hundreds of Active Galactic Nuclei (AGN) at a redshift of two and higher. The increased sky coverage is achieved by enlarging the maximum angular separation between the celestial science object (SC) and the off-axis fringe tracking (FT) star from currently 2 arcseconds (arcsec) up to unprecedented 30 arcsec, limited by the atmospheric conditions. This was successfully demonstrated at the VLTI for the first time., Comment: Proceeding of SPIE Astronomical Telescopes + Instrumentation 2022

We derive renormalised finite functional flow equations for quantum field theories in real and imaginary time that incorporate scale transformations of the renormalisation conditions, hence implementing a flowing renormalisation. The flows are manifestly finite in general non-perturbative truncation schemes also for regularisation schemes that do not implement an infrared suppression of the loops in the flow. Specifically, this formulation includes finite functional flows for the effective action with a spectral Callan-Symanzik cutoff, and therefore gives access to Lorentz invariant spectral flows. The functional setup is fully non-perturbative and allows for the spectral treatment of general theories. In particular, this includes theories that do not admit a perturbative renormalisation such as asymptotically safe theories. Finally, the application of the Lorentz invariant spectral functional renormalisation group is briefly discussed for theories ranging from real scalar and Yukawa theories to gauge theories and quantum gravity., Comment: 31 pages, 1 figure

In this paper, we explore how to augment shared 3D model repositories, such as Thingiverse, with slicing results that are readily available to all users. By having print time and material consumption for different print resolution profiles and model scales available in real-time, users are able to explore different slicing configurations efficiently to find the one that best fits their time and material constraints. To prototype this idea, we build a system called SliceHub, which consists of three components: (1) a repository with an evolving database of 3D models, for which we store the print time and material consumption for various print resolution profiles and model scales, (2) a user interface integrated into an existing slicer that allows users to explore the slicing information from the 3D models, and (3) a computational infrastructure to quickly generate new slicing results, either through parallel slicing of multiple print resolution profiles and model scales or through interpolation. We motivate our work with a formative study of the challenges faced by users of existing slicers and provide a technical evaluation of the SliceHub system.

We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 107 at room temperature, exceeding previously reported values by several orders of magnitude. This will allow a simple and low-cost integration of graphene devices for digital nanoelectronic applications in a hybrid silicon CMOS environment for the first time., Comment: 7 pages, 4 figures. arXiv admin note: substantial text overlap with arXiv:1112.4320, arXiv:1111.6397

We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane based growth process monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. Subsequently, Raman spectroscopy is performed within the channel region in between the catalytic areas and the Raman spectra of fivelayer, bilayer and monolayer graphene confirm the existence of graphene grown by this silicon-compatible, transfer-free and in-situ fabrication approach. These graphene FETs will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment., Comment: 15 pages, 4 figures

By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost integration of graphene devices for nanoelectronic applications in a hybrid silicon CMOS environment., Comment: 16 pages, 4 figures

In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our previously published Si-nanowire (SiNW) technology. Schottky barrier source/drain (S/D) contacts and a silicon-on-insulator (SOI) technology platform are the key features of this dual-gated but single channel universal FET. The combination of two electrically independent gates, one back-gate for S/D Schottky barrier modulation as well as channel formation to establish Schottky barrier FET (SBFET) operation and one front-gate forming a junctionless FET (JLFET) for actual current control, significantly increases the temperature robustness of the device., Comment: 18 pages, 11 figures

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and fabricated silicon nanowire 3D-FET technology. The technological key features of this general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate additionally enabling high-temperature operation of the proposed device. The transistors charge carrier type, i.e. n- or ptype FET, is electrically switchable on the fly by applying a control-gate voltage, which significantly increases the flexibility and versatility in digital integrated circuits., Comment: 6 pages, 14 figures, rejected paper ESSDERC 2014

In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The technological cornerstones for this dual-gated general purpose FET contain Schottky S/D junctions on a silicon-on-insulator (SOI) substrate. The transistor type, i.e. n-type or p-type FET, is electrically selectable on the fly by applying an appropriate control-gate voltage which significantly increases the versatility and flexibility in the design of digital integrated circuits., Comment: Nanoarch 2014 Paris

In 1999, Illinois enacted its tuition tax credit law, which offers tax credits to taxpayers whose own children are attending school, as opposed to tax credits to businesses and/or individuals who contribute to tuition scholarship programs. Recent data suggest that the Illinois tax credit program is benefiting middle- and upper-class families more than disadvantaged students and families. This paper examines how the Illinois law works, describes the Illinois tax credit debate, and focuses on who benefits and who gets hurt. It concludes that by enacting tuition tax credits, Illinois has severely short-changed its low-income public schools and their students. At a time when the state's tax collections have been severely reduced by the nation's economic slowdown, diverting $61 million (in 2000) through tuition tax credits, with similar or greater costs foreseeable each year thereafter, only adds further strain to Illinois' public schools. Research indicates that this effect is not unique to Illinois, and Illinois' experience reinforces conclusions reached by the People for the American Way Foundation and others that such tax credits primarily benefit wealthier citizens, do not help poor families, and undercut states' abilities to target needed resources to help raise student achievement in less affluent public schools. (Contains 50 endnotes.) (SM)

Two alternative current-induced switching geometries, in which the current flows parallel to the magnet/nonmagnet interface, are investigated theoretically using the nonequilibrium Keldysh theory. In the first geometry, the current is perpendicular to the polarizing magnet/nonmagnet interface but parallel to the nonmagnet/switching magnet interface (CPIP). In the second geometry, the current is parallel to both the polarizing magnet/nonmagnet and nonmagnet/switching magnet interfaces (CIP). Calculations for a single-orbital tight binding model indicate that the spin current flowing parallel to the switching magnet/nonmagnet interface can be absorbed by a lateral switching magnet as efficiently as in the traditional current-perpendicular-to-plane (CPP) geometry. The results of the model calculations are shown to be valid also for experimentally relevant Co/Cu CPIP system described by fully realistic tight binding bands fitted to an ab initio band structure. It is shown that almost complete absorption of the incident spin current by a lateral switching magnet occurs when the lateral dimensions of the switching magnet are of the order of 50-100 interatomic distances, i.e., about 20nm and its height as small as a few atomic planes. It is also demonstratedthat strong spin current absorption in the CPIP/CIP geometry is not spoilt by the presence of a rough interface between the switching magnet and nonmagnetic spacer. Polarization achieved using a lateral magnet in the CIP geometry is found to be about 25% of that in the traditional CPP geometry. The present CPIP calculations of the spin transfer torque are also relevant to the so called pure-spin-current-induced magnetization switching that had been recently observed., Comment: 9 pages 8 figures

The current driven magnetisation dynamics of a helical spin-density wave is investigated. Expressions for calculating the spin-transfer torque of real systems from first principles density functional theory are presented. These expressions are used for calculating the spin-transfer torque for the spin spirals of Er and fcc Fe at two different lattice volumes. It is shown that the calculated torque induces a rigid rotation of the order parameter with respect to the spin spiral axis. The torque is found to depend on the wave vector of the spin spiral and the spin-polarisation of the Fermi surface states. The resulting dynamics of the spin spiral is also discussed., Comment: 6 pages 2 figures

An extended Landau-Lifshitz-Gilbert (LLG) equation is introduced to describe the dynamics of inhomogeneous magnetization in a current-carrying wire. The coefficients of all the terms in this equation are calculated quantum-mechanically for a simple model which includes impurity scattering. This is done by comparing the energies and lifetimes of a spin wave calculated from the LLG equation and from the explicit model. Two terms are of particular importance since they describe non-adiabatic spin-transfer torque and damping processes which do not rely on spin-orbit coupling. It is shown that these terms may have a significant influence on the velocity of a current-driven domain wall and they become dominant in the case of a narrow wall., Comment: 19 pages, 1 figure

The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for Physics. GMR arises from differential scattering of the majority and minority spin electrons by a ferromagnet (FM) so that the resistance when the FM layers separated by non-magnetic (NM) spacers are aligned by an applied field is different to when they are antiparallel. In 1996 Slonczewski[3] and Berger[4] predicted that a large spin-polarised current could transfer spin-angular momentum and so exert a spin transfer torque (STT) sufficient to switch thin FM layers between stable magnetisation states[5] and, for even higher current densities, drive continuous precession which emits microwaves[6]. Thus, while GMR is a purely passive phenomenon which ultimately depends on the intrinsic band structure of the FM, STT adds an active element to spintronics by which the direction of the magnetisation may be manipulated. Here we show that highly non-equilibrium spin injection can modify the scattering asymmetry and, by extension, the intrinsic magnetism of a FM. This phenomenon is completely different to STT and provides a third ingredient which should further expand the range of opportunities for the application of spintronics., Comment: 8 pages

The processes of coherent bremsstrahlung (CB) and coherent pair production (CPP) based on aligned crystal targets have been studied in the energy range 20-170 GeV. The experimental arrangement allowed for measurements of single photon properties of these phenomena including their polarization dependences. This is significant as the theoretical description of CB and CPP is an area of active theoretical debate and development. With the theoretical approach used in this paper both the measured cross sections and polarization observables are predicted very well. This indicates a proper understanding of CB and CPP up to energies of 170 GeV. Birefringence in CPP on aligned crystals is applied to determine the polarization parameters in our measurements. New technologies for high energy photon beam optics including phase plates and polarimeters for linear and circular polarization are demonstrated in this experiment. Coherent bremsstrahlung for the strings-on-strings (SOS) orientation yields a larger enhancement for hard photons than CB for the channeling orientations of the crystal. Our measurements and our calculations indicate low photon polarizations for the high energy SOS photons., Comment: 23 pages, 27 figures, 2 tables, REVTeX4 two columns

A mechanism is proposed for manipulating the magnetic state of a helical spin density wave using a current. In this paper, we show that a current through a bulk system with a helical spin density wave induces a spin transfer torque, giving rise to a rotation of the order parameter.The use of spin transfer torque to manipulate the magnetization in bulk systems does not suffer from the obstacles seen for magnetization reversal using interface spin transfer torque in multilayered systems. We demonstrate the effect by a quantitative calculation of the current induced magnetization dynamics of Erbium. Finally we propose a setup for experimental verification., Comment: In the previous version of this paper was a small numerical mistake made when evaluating equation 3 and 9. The number of digits given in the calculation of the torque current tensor is reduced to better represent the accuracy of the calculation. A slightly modified paper have been published in Phys. Rev. Lett. 96, 256601 (2006) 4 pages 3 figures

The CERN-NA-59 experiment examined a wide range of electromagnetic processes for multi-GeV electrons and photons interacting with oriented single crystals. The various types of crystals and their orientations were used for producing photon beams and for converting and measuring their polarisation. The radiation emitted by 178 GeV unpolarised electrons incident on a 1.5 cm thick Si crystal oriented in the Coherent Bremsstrahlung (CB) and the String-of-Strings (SOS) modes was used to obtain multi-GeV linearly polarised photon beams. A new crystal polarimetry technique was established for measuring the linear polarisation of the photon beam. The polarimeter is based on the dependence of the Coherent Pair Production (CPP) cross section in oriented single crystals on the direction of the photon polarisation with respect to the crystal plane. Both a 1 mm thick single crystal of Germanium and a 4 mm thick multi-tile set of synthetic Diamond crystals were used as analyzers of the linear polarisation. A birefringence phenomenon, the conversion of the linear polarisation of the photon beam into circular polarisation, was observed. This was achieved by letting the linearly polarised photon beam pass through a 10 cm thick Silicon single crystal that acted as a "quarter wave plate" (QWP) as suggested by N. Cabibbo et al., Comment: Presented at International workshop "Relativistic Channeling and Related Coherent Phenomena", Frascati (Rome) 23-26 March 2004

We present new results regarding the features of high energy photon emission by an electron beam of 178 GeV penetrating a 1.5 cm thick single Si crystal aligned at the Strings-Of-Strings (SOS) orientation. This concerns a special case of coherent bremsstrahlung where the electron interacts with the strong fields of successive atomic strings in a plane and for which the largest enhancement of the highest energy photons is expected. The polarization of the resulting photon beam was measured by the asymmetry of electron-positron pair production in an aligned diamond crystal analyzer. By the selection of a single pair the energy and the polarization of individual photons could be measured in an the environment of multiple photons produced in the radiator crystal. Photons in the high energy region show less than 20% linear polarization at the 90% confidence level., Comment: 8 pages, 7 figures, REVTeX4 two column, Version for publication

We present the first experimental results on the use of a thick aligned Si crystal acting as a quarter wave plate to induce a degree of circular polarisation in a high energy linearly polarised photon beam. The linearly polarised photon beam is produced from coherent bremsstrahlung radiation by 178 GeV unpolarised electrons incident on an aligned Si crystal, acting as a radiator. The linear polarisation of the photon beam is characterised by measuring the asymmetry in electron-positron pair production in a Ge crystal, for different crystal orientations. The Ge crystal therefore acts as an analyser. The birefringence phenomenon, which converts the linear polarisation to circular polarisation, is observed by letting the linearly polarised photons beam pass through a thick Si quarter wave plate crystal, and then measuring the asymmetry in electron-positron pair production again for a selection of relative angles between the crystallographic planes of the radiator, analyser and quarter wave plate. The systematics of the difference between the measured asymmetries with and without the quarter wave plate are predicted by theory to reveal an evolution in the Stokes parameters from which the appearance of a circularly polarised component in the photon beam can be demonstrated. The measured magnitude of the circularly polarised component was consistent with the theoretical predictions, and therefore is in indication of the existence of the birefringence effect., Comment: 12 pages, 12 figures, 1 table, REVTeX4 two column, Version for publication

The cross section for coherent pair production by linearly polarised photons in the 20-170 GeV energy range was measured for photon aligned incidence on ultra-high quality diamond and germanium crystals. The theoretical description of coherent bremsstrahlung and coherent pair production phenomena is an area of active theoretical debate and development. However, under our experimental conditions, the theory predicted the combined cross section and polarisation experimental observables very well indeed. In macroscopic terms, our experiment measured a birefringence effect in pair production in a crystal. This study of this effect also constituted a measurement of the energy dependent linear polarisation of photons produced by coherent bremsstrahlung in aligned crystals. New technologies for manipulating high energy photon beams can be realised based on an improved understanding of QED phenomena at these energies. In particular, this experiment demonstrates an efficient new polarimetry technique. The pair production measurements were done using two independent methods simultaneously. The more complex method using a magnet spectrometer showed that the simpler method using a multiplicity detector was also viable., Comment: 10 pages, 13 figures, 1 table, REVTeX4 two column, Version for publication