357 results on '"Wernicke, Tim"'
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2. Author Correction: Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
3. Ultraviolet‑B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors.
4. Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements.
5. Defects, performance, and reliability in UVC LEDs
6. Prospects of far-UVC LED technology
7. Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs
8. Group III-Nitride-Based UV Laser Diodes
9. Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode
10. Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
11. Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes
12. Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs
13. Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
14. Nitride Semiconductors
15. Group III-Nitride-Based UV Laser Diodes
16. Cathodoluminescence and Friends to Study Defects in UV Emitters.
17. Controlling the morphology transition between step-flow growth and step-bunching growth
18. The Quest for Ultraviolet Vertical-Cavity Surface-Emitting Lasers
19. Athermalization of the Lasing Wavelength in Vertical‐Cavity Surface‐Emitting Lasers
20. Defects, performance, and reliability in UVC LEDs
21. Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
22. Displacement Talbot lithography for nano-engineering of III-nitride materials
23. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
24. Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
25. Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
26. III-N optoelectronic devices: understanding the physics of electro-optical degradation
27. Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes
28. Nitride Semiconductors
29. Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes
30. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities.
31. Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
32. Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
33. Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
34. Impact of Plasma Treatment of n-Al0.87Ga0.13N:Si Surfaces on V/Al/Ni/Au Contacts in Far-UVC LEDs
35. Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
36. The influence of threading dislocations propagating through an AlGaN UVC LED
37. Thin-film UV VCSELs and LEDs by electrochemical etching
38. Development of far-UVC LEDs and their application in irradiation systems for antisepsis and sensing
39. Out of the blue: UV VCSELs
40. UV LED reliability: degradation mechanisms and challenges
41. Thin-film flip-chip UVB LEDs realized by electrochemical etching
42. Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
43. Single phase [formula omitted] GaN on [formula omitted] sapphire grown by metal-organic vapor phase epitaxy
44. Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
45. Orientation control of GaN [formula omitted] and [formula omitted] grown on [formula omitted] sapphire by metal-organic vapor phase epitaxy
46. Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
47. Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs
48. Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis
49. Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
50. Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
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