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4. Simulation of optical gain in AlGaN quantum wells

5. Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs.

6. Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

7. Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

10. Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures

22. Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs.

28. Advances towards deep-UV light emitting diode technologies

29. Low resistance n-contact for UVC LEDs by a two-step plasma etching process

34. Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope

37. Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

39. Improving AlN crystal quality and strain management on nano patterned sapphire substrates by high temperature annealing for UVC LEDs

42. Review—Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

43. Psychiatric Illnesses in Old Age

44. Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films

45. Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap.

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