Search

Your search keyword '"Wernersson, L. E."' showing total 253 results
Start Over Author "Wernersson, L. E."
253 results on '"Wernersson, L. E."'

1. Correlation-induced conductance suppression at level degeneracy in a quantum dot

Author

Nilsson, H. A., Karlström, O., Larsson, M., Caroff, P., Pedersen, J. N., Samuelson, L., Wacker, A., Wernersson, L. E., and Xu, H. Q.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations., Comment: 5 pages, 4 figures

Published
2009
Full Text
View/download PDF

2. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Author

Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y. M., Borg, B. M., Messing, M. E., Wernersson, L. -E., Algra, R. E., Bakkers, E. P. A. M., Metzger, T. H., Harder, R, and Robinson, I. K.

Subjects
Condensed Matter - Materials Science
Abstract

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation., Comment: 18 pages, 6 figures Submitted to New Journal of Physics

Published
2009
Full Text
View/download PDF

3. Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires

Author

Karlström, O., Wacker, A., Nilsson, K., Astromskas, G., Roddaro, S., Samuelson, L., and Wernersson, L. -E.

Subjects
Condensed Matter - Other Condensed Matter
Abstract

The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material., Comment: 15 pages, 6 Figures included, to appear in Nanotechnology

Published
2008
Full Text
View/download PDF

10. Narrow gap nanowires: From nanotechnology to RF-circuits on Si.

Author

Wernersson, L.-E.

Subjects
*NARROW gap semiconductors, *NANOWIRES, *NANOTECHNOLOGY, *RADIO frequency, *SILICON
Abstract

III-V narrow band gap nanowires are considered for device applications. Nanowires are grown using the vapor-liquid-solid growth mechanism with the aim to implement high-performance devices. It is shown that high quality InAs, InSb, and GaSb nanowires, as well as their alloys, may be grown by metal organic vapor phase epitaxy. In particular, the formation of the InAs/GaSb (GaSb segment on InAs stem) and GaSb/InAs (InAs segment on GaSb stem) heterojunction is presented and used as tunnel junctions for applications in tunnel field-effect transistors. InAs nanowires are implemented in a vertical transistor architecture and they show competitive RF-performance and encouraging low-frequency noise properties. They are integrated on Si substrates using a thin InAs buffer layer to avoid access resistance. The transistors have been integrated into small-scale circuits with mixing capabilities above 1 GHz. Finally, the photo response of InAsSb nanowires has been measured and it is found to be more sensitive towards the diameter than the alloy composition in the current implementation. [ABSTRACT FROM AUTHOR]

Published
2015
Full Text
View/download PDF

13. Core-Shell TFET Developments and TFET Limitations

Author

Passlack, M., primary, Ramvall, P., additional, Vasen, T., additional, Afzalian, A., additional, Thelander, C., additional, Dick, K.A., additional, Wernersson, L.-E., additional, Doornbos, G., additional, and Holland, M., additional

Published
2019
Full Text
View/download PDF

17. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric.

Author

Babadi, A. S., Lind, E., and Wernersson, L. E.

Subjects
METAL oxide semiconductors, CAPACITORS, ELECTRIC potential, NARROW gap semiconductors, ELECTRONS
Abstract

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary. [ABSTRACT FROM AUTHOR]

Published
2014
Full Text
View/download PDF

19. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V

Author

Memisevic, E., Svensson, J., Hellenbrand, M., Lind, E., and Wernersson, L. E.

Subjects
Nano Technology, Electrical Engineering, Electronic Engineering, Information Engineering
Abstract

We present a vertical nanowire InAs/GaAsSb/GaSb TFET with a highly scaled InAs diameter (20 nm). The device exhibits a minimum subthreshold swing of 48 mV/dec. for Vds = 0.1-0.5 V and achieves an Ion = 10.6 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V. The lowest subthreshold swing achieved is 44 mV/dec. at Vds= 0.05 V. Furthermore, a benchmarking is performed against state-of-the-art TFETs and MOSFETs demonstrating a record high I60 and performance benefits for Vds between 0.1 and 0.3 V.

Published
2017

29. InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

Author

Memisevic, Elvedin, Svensson, J., Lind, E., Wernersson, L. E., Memisevic, Elvedin, Svensson, J., Lind, E., and Wernersson, L. E.

Abstract

Vertical InAs/GaSb nanowire TFETs with diameters of 20 nm and 25 nm have been fabricated and characterized. The influence of diameter, gate-placement, and nanowire numbers have been studied. The best device shows a subthreshold swing of 68 mV/dec at VDS = 0.3 V and 26 μA/μm at VDS = 0.3 V and VGS = 0.5 V. It achieves a self-gain larger than 100 with high transconductance efficiency.

Published
2016

30. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

Author

Zota, C. B., Lindelöw, F., Wernersson, L. E., Lind, E., Zota, C. B., Lindelöw, F., Wernersson, L. E., and Lind, E.

Abstract

Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

Published
2016

33. InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

Author

Vasen, T., primary, Ramvall, P., additional, Afzalian, A., additional, Thelander, C., additional, Dick, K.A., additional, Holland, M., additional, Doornbos, G., additional, Wang, S.W., additional, Oxland, R., additional, Vellianitis, G., additional, van Dal, M.J.H., additional, Duriez, B., additional, Ramirez, J.-R., additional, Droopad, R., additional, Wernersson, L.-E., additional, Samuelson, L., additional, Chen, T.-K., additional, Yeo, Y.-C., additional, and Passlack, M., additional

Published
2016
Full Text
View/download PDF

38. Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires

Author

Jurgilaitis, A., Enquist, H., Andreasson, Björn Pererik, Persson, A. I. H., Borg, B. M., Caroff, P., Dick, K. A., Harb, M., Linke, H., Nüske, R., Wernersson, L.-E., Larsson, J., Jurgilaitis, A., Enquist, H., Andreasson, Björn Pererik, Persson, A. I. H., Borg, B. M., Caroff, P., Dick, K. A., Harb, M., Linke, H., Nüske, R., Wernersson, L.-E., and Larsson, J.

Abstract

The modified phonon dispersion is of importance for understanding the origin of the reduced heat conductivity in nanowires. We have measured the phonon dispersion for 50 nm diameter InSb (111) nanowires using time-resolved X-ray diffraction. By comparing the sound speed of the bulk (3880 m/s) and that of a classical thin rod (3600 m/s) to our measurement (2880 m/s), we conclude that the origin of the reduced sound speed and thereby to the reduced heat conductivity is that the C44 elastic constant is reduced by 35% compared to the bulk material. © 2014 American Chemical Society.

Published
2014
Full Text
View/download PDF

39. 60 GHz wavelet generator for impulse radio applications

Author

Egard, M., Ärlelid, M., Lind, E., Philippe Caroff, Astromskas, G., Borg, M., Wernersson, L. -E, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

42. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Author

Wang, C. H., primary, Doornbos, G., additional, Astromskas, G., additional, Vellianitis, G., additional, Oxland, R., additional, Holland, M. C., additional, Huang, M. L., additional, Lin, C. H., additional, Hsieh, C. H., additional, Chang, Y. S., additional, Lee, T. L., additional, Chen, Y. Y., additional, Ramvall, P., additional, Lind, E., additional, Hsu, W. C., additional, Wernersson, L.-E., additional, Droopad, R., additional, Passlack, M., additional, and Diaz, C. H., additional

Published
2014
Full Text
View/download PDF

45. Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors

Author

Persson, K. -M, Malm, B. Gunnar, Wernersson, L. -E, Persson, K. -M, Malm, B. Gunnar, and Wernersson, L. -E

Abstract

By measuring 1/f-noise in wrap-gated InAs nanowire metal-oxide-semiconductor field-effect transistors with transport dominating, controllably, in either an inner, core channel, or an outer, surface channel, it is possible to accurately evaluate the material quality related Hooge-parameter, alpha(H), with reduced interference from the surface properties. The devices show low values of alpha(H) similar to 4 x 10(-5). At forward bias, where the data suggest that the 1/f-noise is dominated by the contribution from the high-k interface, devices show low values of normalized noise spectral density., QC 20130902

Published
2013
Full Text
View/download PDF

46. Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Author

Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., Robinson, I.K., Favre-Nicolin, V., Mastropietro, F., Eymery, J., Camacho, D., Niquet, Y.M., Borg, B.M., Messing, M.E., Wernersson, L.-E., Algra, R.E., Bakkers, E.P.A.M., Metzger, T.H., Harder, R., and Robinson, I.K.

Abstract

Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this paper, we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. We also discuss the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 035013

Published
2010

49. InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

Author

Chang, S. W., primary, Li, Xu, additional, Oxland, R., additional, Wang, S. W., additional, Wang, C. H., additional, Contreras-Guerrero, R., additional, Bhuwalka, K. K., additional, Doornbos, G., additional, Vasen, T., additional, Holland, M. C., additional, Vellianitis, G., additional, van Dal, M. J. H., additional, Duriez, B., additional, Edirisooriya, M., additional, Rojas-Ramirez, J. S, additional, Ramvall, P., additional, Thoms, S., additional, Peralagu, U., additional, Hsieh, C. H., additional, Chang, Y. S., additional, Yin, K. M., additional, Lind, E., additional, Wernersson, L.-E., additional, Droopad, R., additional, Thayne, I., additional, Passlack, M., additional, and Diaz, C. H., additional

Published
2013
Full Text
View/download PDF

50. InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Author

Wang, C. H., primary, Wang, S. W., additional, Doornbos, G., additional, Astromskas, G., additional, Bhuwalka, K., additional, Contreras-Guerrero, R., additional, Edirisooriya, M., additional, Rojas-Ramirez, J. S., additional, Vellianitis, G., additional, Oxland, R., additional, Holland, M. C., additional, Hsieh, C. H., additional, Ramvall, P., additional, Lind, E., additional, Hsu, W. C., additional, Wernersson, L.-E., additional, Droopad, R., additional, Passlack, M., additional, and Diaz, C. H., additional

Published
2013
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results