1. Potential of Sputtered AZO Layers for the Industrial Manufacturing of Hetero Junction Solar Cells
- Author
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Dimer, M., Cruz, A., Janke, S., Wendlandt, S., Graupner, U., Erfurt, D., Wolke, W., Bivour, M., Stannowski, B., and Schneiderlöchner, E.
- Subjects
Manufacturing & Production of Si Cells ,Silicon Materials and Cells - Abstract
8th World Conference on Photovoltaic Energy Conversion; 83-87, Aluminium doped zinc oxide (AZO) is an interesting transparent conductive oxide (TCO) for silicon heterojunction (SHJ) solar cells to replace indium tin oxide (ITO) to enable cost reduction and omit the use of the limited global indium reserve. However, AZO layers have a much higher sheet resistance and lower damp heat stability compared to ITO. This work shows that the AZO stability can be improved by using an ITO capping layer, which is also decreasing the sheet resistance of the AZO/ITO layer stack compared to a pure AZO layer. Here, high rate rotatable magnetron sputtering was used to deposit AZO and ITO films. Under these conditions ITO capped AZO layers deposited on a-Si/p can result in lower fill factors. It will be shown that heating before sputtering and introduction of a thin ITO layer between AZO and a-Si/P avoid the fill factor decrease and lead to fill factors above 80%. The properties of the solar cells with the ITO/AZO/ITO layer stack are comparable to those solar cells with the pure ITO reference layer. Similar solar cell properties with the same ITO/AZO/ITO layer stack on the a-Si/n of the front side have been achieved. Furthermore, the TCO materials costs of ITO, AZO/ITO and ITO/AZO/ITO layers stacks for industrial manufacturing are discussed.
- Published
- 2022
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