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Detailed predictions of the electronic spectra of SC(sub n)H radicals are presented. The multiconfiguration self-consistent field (MCSCF) and the multireference configuration interaction (MRCI) were implemented during the study.

ZnS-passivated CdS:Mn nanocrystals are synthesized for a yellow emitting nanocrystal phosphor. The different roles of the conjugated polymer and the nanocrystal layers for hole transport and electron transport are discussed.

Zinc nanobelts and nanodisks are studied. It is demonstrated that ZnO nanobelts and metallic Zn nanobelts and nanodisks can be formed in-situ in a transmission electron microscope (TEM) by electron-beam irradiation of single-crystalline Zn nanoparticles.

The effects of oxygen pressure on epitaxial quality of LSAT films deposited on SrTiO3(100) were investigated.

The in-situ deposition, structure and superconducting properties of NdBa2Cu3O7-delta (NBCO)/SAT/NBCO and NBCO/Sr2AlNbO6(SAN)/NBCO multilayers have been investigated through x-ray diffraction and transmission electron microscopy. Results indicate that single SAT and SAN layers have smooth surfaces and high-epitaxial growth quality. SAT has a dielectric constant of 23.5 and a loss value of less than 10 to the -3rd power. This finding indicates that SAT is a highly compatible insulator in high-temperature multilayers.

The fabrication of high-temperature superconductor Josephson junctions on asymmetrical V-shape grooves with the use of a gallium focused-ion beam (FIB) is reported. The FIB-etched devices, whose I-V properties were controlled by the dose amount of gallium ions and the thickness of the NdBa2Cu3O7-delta films, were used as components of a high-temperature superconductor Single Flux Quantum circuit. A line inductance of 0.5 pH/micrometer for a 20nm thick film was estimated.

A study was conducted to investigate the intergrain critical current density of Y123 bicrystal films deposited on MgO bicrystal substrates by LPE method. TEM observation of the bicrystal films show that their grain boundary is composed of straight single facets with about 50 mu m length. It was also noted that the suppression rate of intergrain critical density of the resulting films with tilt angle 24 degrees is lower than in films grown by PVD.

A study of the relationship between the electrical characteristics and microstructures of Josephson junctions was conducted using transmission electron microscopy (TEM). The results reveal that it is possible to enhance the coverage of the barrier layer by utilizing a-axis oriented bottom electrodes and homoepitaxy growth. TEM data show that multilayer junctions with PrBCO or YBFeO barrier layers grown through quasi-homoepitaxy have good crystallinity and perfect coverage.

The properties of c-axis quasi-homoepitaxial multilayers consisting of PrBa2Cu3O7-delta and NdBa2Cu3O7-delta films with high crystallinity and smooth surface morphology were analyzed. Pulsed laser deposition was used to grow the films on SrTiO3 substrates. Rutherford backscattering spectrometry, x-ray diffraction and transmission electron microscopy reveal that a well-equilibrated and relaxed crystal.

The crystal orientations and surface morphology of thin films of YBa2Cu3O(7-x) (YBCO) on YBCO single crystal substrates were investigated. The films, which were grown via off-axis magnetron sputtering, exhibited an axis orientation that was dependent on the growth temperature and lattice mismatches at the interface. The latter was caused by the deoxidation and oxidation of the YBCO substrate during film growth.

Stoichiometric HfN layers, with N/Hf=1.0±0.03, were grown on MgO(001) substrates at 650 °C by ultrahigh-vacuum magnetically unbalanced magnetron sputter deposition in mixed N2/Ar discharges at 20 mTorr (2.67 Pa). High-resolution x-ray diffraction ω-2θ and azimuthal [lowercase_phi_synonym] scans combined with cross-sectional transmission electron microscopy establish that HfN grows epitaxially with a cube-on-cube orientational relationship to the substrate: (001)HfN∥(001)MgO and [100]HfN∥[100]MgO. The layers are fully relaxed at the growth temperature and have a room-temperature bulk lattice constant of 0.4524 nm. Electronic transport measurements show that HfN is metallic with a room-temperature resistivity of 14.2 μΩ cm, an n-type carrier concentration of 4.8×1021 cm-3, and an electron mobility of 86 cm2 V-1 s-1. The resistivity ρ remains constant at 3.5 μΩ cm, limited by defect scattering, between 10 and 50 K, while at higher temperatures ρ increases linearly and is limited primarily by phonon scattering. HfN(001) is also superconducting with a critical temperature of 9.18 K. The hardness and elastic modulus of HfN(001) were determined from nanoindentation measurements to be 25.2±0.7 and 450±9 GPa, respectively. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

In situ study of epitaxial island formation and alloying of FePd nanoparticles is described by using reflection high-energy electron diffraction (RHEED) followed by ex situ atomic structure characterization. The studies have shown complex chemical structures at an intermediate stage of the ordering process with ordered regions of both [L1.sub.0] and [L1.sub.2] phases.

The structural and optical characterization of [In.sub.2][O.sub.3] films is done by x-ray diffraction, Raman spectroscopy and room temperature photoluminescence (PL). The quantum confinement effect has shown that the size of the ZnO clusters is in the nanorange.

High-resolution transmission electron microscope analysis of the microstructure of interfaces prepared by high power impulse magnetron sputtering (HIPIMS) and the subsequent growth of the film were compared with interfaces prepared by filtered cathodic vacuum arc or Ar glow etching. It is found that coatings deposited after HIPIMS pretreatment exhibited superior adhesion in comparison to pretreatments in Ar glow discharge and cathodic vacuum arc environments.