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Your search keyword '"Wen, Dianzhong"' showing total 310 results
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310 results on '"Wen, Dianzhong"'

4. The Simulation, Fabrication Technology and Characteristic Research of Micro-Pressure Sensor with Isosceles Trapezoidal Beam-Membrane

Author

Wu, Jing, Zhao, Xiaofeng, Liu, Yibo, and Wen, Dianzhong

Subjects
Physics - Applied Physics
Abstract

A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon membrane affects pressure sensitive characteristics, a simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on characteristics of pressure sensor. According to that, the chips of micro-pressure sensors were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with <100> orientation.The experimental results show that the proposed sensor achieves a better sensitivity of 9.64 mV/kPa and an excellent linearity of 0.09%F.S. in the range of 0~3.0 kPa at room temperature and a supply voltage of 5.0 V,with a super temperature coefficient of sensitivity(TCS) about - 684 ppm/K from 235.15 K to 360.15 K and low pressure measurement less than 3.0 kPa.

Published
2020
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46. Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles.

Author

Wang, Lu, Xie, Jiachu, and Wen, Dianzhong

Abstract

Resistive random access memory has been widely studied as a powerful candidate for building future memories and realizing high-efficiency artificial neuromorphic systems. In this paper, gold nanoparticles (Au NPs) are doped in a leaf solution of Scindapsus aureus (SA) as the active layer to fabricate Al/SA:Au NPs/ITO/glass resistive random access memory. The device exhibits stable bipolar resistance switching characteristics. More importantly, the device's multilevel storage capabilities and synaptic potentiation and depression behaviour have been proven. Compared with the device without doped Au NPs in the active layer, the device has a higher ON/OFF current ratio, which is attributed to the Coulomb blockade effect caused by the Au NPs. The device plays an important role in realizing high-density memory and efficient artificial neuromorphic systems. [ABSTRACT FROM AUTHOR]

Published
2023
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50. Full Hardware Image Encryption for Oscillating Memristor Circuits.

Author

Wang, Lu, Qu, Jiaxin, Li, Jiazhuang, and Wen, Dianzhong

Subjects
LIQUID crystal displays, IMAGE encryption, FIELD programmable gate arrays, RANDOM number generators
Abstract

Al/PMMA/CS/PMMA/ITO structure devices are fabricated using polymethyl methacrylate (PMMA) and chitosan (CS) as dielectric layer materials. Its electrical characteristics and conductive mechanism are studied using its own physical characteristics to build a memristor true random number generator (TRNG). The generated true random sequence is optimized by a field programmable gate array (FPGA), and the optimized random number sequence is tested by the National Institute of Standards and Technology (NIST) to analyze its randomness. The pipeline structure is introduced to optimize the whole image encryption system, and the optimized random number sequence is used to realize image encryption inside the FPGA. Then, the encrypted image is displayed on a liquid crystal display (LCD) screen to realize random number generation and image encryption of all hardware. Finally, the encrypted image is analyzed. [ABSTRACT FROM AUTHOR]

Published
2023
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