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Your search keyword '"Welser, Jeffrey J."' showing total 10 results
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10 results on '"Welser, Jeffrey J."'

2. Electric-field penetration into metals: consequences for high-dielectric-constant capacitors

Author

Black, Charles T. and Welser, Jeffrey J.

Subjects
Electrodes -- Research, Capacitors -- Research, Dielectric devices -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A semiclassical capacitor model was used to estimate the capacitance correction caused by the finite width of the induced-charge distribution in electrodes. The model explained well the universally-seen decrease in dielectric constant with insulator thickness in high-dielectric-constant capacitors. It was able to quantitatively explain the maximum reported interface capacitance in Pt/BST/Pt structures, as well as increased capacitance density in conducting perovskite-electroded capacitors. However, the model was valid only for static conditions.

Published
1999

3. Evaluation of the valence band discontinuity of Si/Si sub 1-xGe sub x/Si heterostructures by application of admittance spectroscopy to MOS capacitors

Author

Takagi, Shin-ichi, Hoyt, Judy L., Rim, Kern, Welser, Jeffrey J., and Gibbons, James F.

Subjects
Spectrum analysis -- Usage, Capacitors -- Measurement, Dielectric devices -- Measurement, Business, Electronics, Electronics and electrical industries
Abstract

Conventional admittance spectroscopy is based on the measurement of pn junction admittance or Schottsky diodes made on a substrate. The principle of admittance spectroscopy is applied for the first time ever to the measurement of MOS capacitors manufactured on Si/Si sub 1-xGe sub x/Si double heterostructures. The method was verified through experimentation. A new feature of this MOS capacitor measurement method is that two hetero-interfaces of a double heterostructure can be evaluated separately by controlling the gate voltage.

Published
1998

7. Frontiers of Engineering: Reports on Leading-Edge Engineering from the 2008 Symposium

Author

NATIONAL ACADEMY OF ENGINEERING WASHINGTON DC, Beames, Charles L., Bisantz, Ann M., Boring, Ronald L., Gao, Xiaohu, Guerlain, Stephanie, Hrkach, Jeff, Javey, Ali, Lee, John D., Martz, Joseph C., Mitragotri, Samir, Nixon, Steven D., Ozkan, Mihrimah, Pack, Daniel W., Romig, Jr., A. D., Welser, Jeffrey J., Zhitenev, Nikolai, NATIONAL ACADEMY OF ENGINEERING WASHINGTON DC, Beames, Charles L., Bisantz, Ann M., Boring, Ronald L., Gao, Xiaohu, Guerlain, Stephanie, Hrkach, Jeff, Javey, Ali, Lee, John D., Martz, Joseph C., Mitragotri, Samir, Nixon, Steven D., Ozkan, Mihrimah, Pack, Daniel W., Romig, Jr., A. D., Welser, Jeffrey J., and Zhitenev, Nikolai

Abstract

This volume includes 16 papers from the National Academy of Engineering's 2008 U.S. Frontiers of Engineering (USFOE) Symposium. USFOE meetings bring together 100 outstanding engineers (ages 30-45) to exchange information about leading-edge technologies in a range of engineering fields. The 2008 symposium covered four topic areas: drug delivery systems. emerging nanoelectronic devices, cognitive engineering, and countering the proliferation of weapons of mass destruction. The papers focus on cutting-edge developments., Proceedings of the U.S. Frontiers of Engineering 2008 held in Albuquerque, NM on 18-20 Sep 2008. ISBN: 978-03-09-12821-6. Sponsored in part by Air Force Office of Scientific Research, Defense Advanced Research Projects Agency, Department of Defense-DDR&E Research, National Science Foundation, and Sandia National Laboratories.

Published
2009

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