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Your search keyword '"Weiland, B.E."' showing total 9 results
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9 results on '"Weiland, B.E."'

5. Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition

Author

Fanton, M.A., Weiland, B.E., Synder, D.W., and Redwing, J.M.

Subjects
Thermodynamics -- Models, Silicon carbide -- Thermal properties, Silicon carbide -- Chemical properties, Chemical vapor deposition -- Research, Physics
Abstract

A thermodynamic model for predicting the boundary between deposition of SiC and deposition of a mixture of C and SiC, where SiC is the only condensed phase produced during halide chemical vapor deposition (CVD) growth, is proposed. It is observed that the changes in precursor concentration, [H.sub.2] concentration, temperatures, pressure and Cl concentration have influenced the position of the phase pure boundary.

Published
2007

6. Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Author

H.J. Chung, Polyakov, A.Y., Huh, S.W., Nigam, S., Skowronski, M., Fanton, M.A., Weiland, B.E., and Snyder, D.W.

Subjects
Silicon carbide -- Chemical properties, Halides -- Chemical properties, Chemical vapor deposition -- Analysis, Physics
Abstract

High-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor and a carbon precursor.

Published
2005

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