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In van der Waals heterostructures (vdWHs), the manipulation of interlayer stacking/coupling allows for the construction of customizable quantum systems exhibiting exotic physics. An illustrative example is the diverse range of states of matter achieved through varying the proximity coupling between two-dimensional (2D) quantum spin liquid (QSL) and superconductors within the TaS2 family. This study presents a demonstration of the intertwined physics of spontaneous rotational symmetry breaking, hidden magnetism, and Ising superconductivity in the three-fold rotationally symmetric, non-magnetic natural vdWHs 6R-TaS2. A distinctive phase emerges in 6R-TaS2 below a characteristic temperature (T*) of approximately 30 K, which is characterized by a remarkable set of features, including a giant extrinsic anomalous Hall effect (AHE), Kondo screening, magnetic field-tunable thermal hysteresis, and nematic magneto-resistance. At lower temperatures, a coexistence of nematicity and Kondo screening with Ising superconductivity is observed, providing compelling evidence of hidden magnetism within a superconductor. This research not only sheds light on unexpected emergent physics resulting from the coupling of itinerant electrons and localized/correlated electrons in natural vdWHs but also emphasizes the potential for tailoring exotic quantum states through the manipulation of interlayer interactions., Comment: 16 pages, 4 figures

The quantum Griffiths singularity (QGS) is a phenomenon driven by quenched disorders that break conventional scaling invariance and result in a divergent dynamical critical exponent during quantum phase transitions (QPT). While this phenomenon has been well-documented in low-dimensional conventional superconductors and in three-dimensional (3D) magnetic metal systems, its presence in 3D superconducting systems and in unconventional high-temperature superconductors (high-Tc SCs) remains unclear. In this study, we report the observation of robust QGS in the superconductor-metal transition (SMT) of both quasi-2D and 3D anisotropic unconventional high-Tc superconductor CaFe1-xNixAsF (x < 5%) bulk single crystals, where the QGS states persist to up to 5.3 K. A comprehensive quantum phase diagram is established that delineates the 3D anisotropic QGS of SMT induced by perpendicular and parallel magnetic field. Our findings reveal the universality of QGS in 3D superconducting systems and unconventional high-Tc SCs, thereby substantially expanding the range of applicability of QGS., Comment: 17 pages, 4 figures

Transition metal compounds with kagome structure have been found to exhibit a variety of exotic structural, electronic, and magnetic orders. These orders are competing with energies very close to each other, resulting in complex phase transitions. Some of the phases are easily observable, such as the charge density wave (CDW) and the superconducting phase, while others are more challenging to identify and characterize. Here we present magneto-transport evidence of a new phase below ~35 K in the kagome topological metal CsV$_3$Sb$_5$ (CVS) thin flakes between the CDW and the superconducting transition temperatures. This phase is characterized by six-fold rotational symmetry in the in-plane magnetoresistance (MR) and is connected to the orbital current order in CVS. Furthermore, the phase is characterized by a large in-plane negative magnetoresistance, which suggests the existence of a three-dimensional, magnetic field-tunable orbital current ordered phase. Our results highlight the potential of magneto-transport to reveal the interactions between exotic quantum states of matter and to uncover the symmetry of such hidden phases.

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. Our results provide new insights into the understanding of in-plane NMR in topological materials.

Linear nonsaturating magnetoresistance (LMR) represents a class of anomalous resistivity response to external magnetic field that has been observed in a variety of materials including but not limited to topological semi-metals, high-Tc superconductors and materials with charge/spin density wave (CDW/SDW) orders. Here we report the observation of LMR in layered kagome superconductor and CDW material CsV3Sb5 thin flakes, as well as the dimensional crossover and temperature (T) crossover of such LMR. Specifically, in ultrathin CsV3Sb5 crystals, the magnetoresistance (MR) exhibits a crossover from LMR at low T to quadratic B dependence above the CDW transition temperature; the MR also exhibits a crossover from LMR to sublinear MR for sample thickness at around ~20 nm at low T. We discuss several possible origins of the LMR and attribute the effect to two-dimensional (2D) CDW fluctuations. Our results may provide a new perspective for understanding the interactions between competing orders in kagome superconductors.

ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 160K with increasing thickness of the ZrTe5 thin flakes from 42nm to 89nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Our findings provide a multi-parameter indicator for the emergence of topological phase transition in ZrTe5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also shed light on the role of anomalous Hall Effect in the transport properties of ZrTe5., Comment: 15 pages, 6 figues

As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surged. The state-of-the-art silicon-based and two-dimensional (2D) materials based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here we present few-layer MoS$_2$ Rad-Hard field-effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics. The MoS$_2$ PSE-FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s$^{-1}$ and can be repaired with a moderate thermal annealing at 100 $^{\circ}$C for 5 minutes. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS$_2$ PSE-FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal-oxide-semiconductor (CMOS)-like MoS$_2$ PSE-inverters have been built and show similar high radiation tolerance. Furthermore, the feasibility of wafer-scale Rad-Hard PSE-inverter array has been demonstrated using chemical vapor deposition (CVD) grown monolayer MoS$_2$. Our studies uncover the potential of 2D materials based PSE devices in future Rad-Hard integrated circuits (ICs)., Comment: 20 pages, 12 figures

Much effort has been devoted to the electronic properties of relatively thick ZrTe5 crystals, focusing on their three-dimensional topological effects. Thin ZrTe5 crystals, on the other hand, were much less explored experimentally. Here we present detailed magnetotransport studies of few-layer ZrTe5 devices, in which electron-electron interactions and weak anti-localization are observed. The coexistence of the two effects manifests themselves in corroborating evidence presented in the temperature and magnetic field dependence of the resistance. Notably, the temperature-dependent phase coherence length extracted from weak anti-localization agrees with strong electron-electron scattering in the sample. Meanwhile, universal conductance fluctuations have temperature and gate voltage dependence that is similar to that of the phase coherence length. Lastly, all the transport properties in thin ZrTe5 crystals show strong two-dimensional characteristics. Our results provide new insight into the highly intricate properties of topological material ZrTe5.

Iron selenide (FeSe) - the structurally simplest iron-based superconductor, has attracted tremendous interest in the past years. While the transition temperature (Tc) of bulk FeSe is $\sim$ 8 K, it can be significantly enhanced to 40 - 50 K by various ways of electron doping. However, the underlying physics for such great enhancement of Tc and so the Cooper pairing mechanism still remain puzzles. Here, we report a systematic study of the superconducting- and normal-state properties of FeSe films via ionic liquid gating. With fine tuning, Tc evolves continuously from below 10 K to above 40 K; in situ two-coil mutual inductance measurements unambiguously confirm the gating is a uniform bulk effect. Close to Tc, the normal-state resistivity shows a linear dependence on temperature and the linearity extends to lower temperatures with the superconductivity suppressed by high magnetic fields. At high fields, the normal-state magnetoresistance exhibits a linear-in-field dependence and obeys a simple scaling relation between applied field and temperature. Consistent behaviors are observed for different-Tc states throughout the gating process, suggesting the pairing mechanism very likely remains the same from low- to high-Tc state. Importantly, the coefficient of the linear-in-temperature resistivity is positively correlated with Tc, similarly to the observations in cuprates, Bechgaard salts and iron pnictide superconductors. Our study points to a short-range antiferromagnetic exchange interaction mediated pairing mechanism in FeSe., Comment: 21 pages, 5 figures, SI not included

The associations between emergent physical phenomena (e.g., superconductivity) and orbital, charge, and spin degrees of freedom of $3d$ electrons are intriguing in transition metal compounds. Here, we successfully manipulate the superconductivity of spinel oxide Li$_{1\pm x}$Ti$_2$O$_{4-\delta}$ (LTO) by ionic liquid gating. A dome-shaped superconducting phase diagram is established, where two insulating phases are disclosed both in heavily electron-doping and hole-doping regions. The superconductor-insulator transition (SIT) in the hole-doping region can be attributed to the loss of Ti valence electrons. In the electron-doping region, LTO exhibits an unexpected SIT instead of a metallic behavior despite an increase in carrier density. Furthermore, a thermal hysteresis is observed in the normal state resistance curve, suggesting a first-order phase transition. We speculate that the SIT and the thermal hysteresis stem from the enhanced $3d$ electron correlations and the formation of orbital ordering by comparing the transport and structural results of LTO with the other spinel oxide superconductor MgTi$_2$O$_4$, as well as analysing the electronic structure by first-principles calculations. Further comprehension of the detailed interplay between superconductivity and orbital ordering would contribute to the revealing of unconventional superconducting pairing mechanism., Comment: 6 pages, 4 figures

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pm\delta} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.

In this article, we studied the role of oxygen in Pr$_{2}$CuO$_{4\pm\delta}$ thin films fabricated by polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr$_{2}$CuO$_{4\pm\delta}$ samples were systematically investigated. It is found that with decreasing the oxygen content, the low-temperature Hall coefficient ($R_H$) and magnetoresistance change from negative to positive, similar to those with the increase of Ce-doped concentration in R$_{2-x}$Ce$_{x}$CuO$_{4}$ (R= La, Nd, Pr, Sm, Eu). In addition, $T_c$ versus $R_H$ for both Pr$_{1-x}$LaCe$_{x}$CuO$_{4}$ and Pr$_{2}$CuO$_{4\pm\delta}$ samples can coincide with each other. We conclude that the doped electrons induced by the oxygen removal are responsible for the superconductivity of $T^\prime$-phase parent compounds., Comment: 5 pages, 5 figures. Related publication: Phys.Rev.B 96,104518(2017)

We present a tunneling study on single crystalline parent cuprate thin films, i.e. a series of Pr2CuO4+/-{\delta}(PCO) with tunable superconducting transition temperature. The zero-bias anomaly of differential conductance, well reported in the normal state of R2-xCexCuO4 (R = Pr, Nd, La) and named as normal state gap (NSG), is observed in the Ce-free samples. This NSG behaves quite robust against the magnetic field up to 16 T, but fades away with increasing the temperature. Most importantly, we find that the magnitude of the NSG becomes larger with increasing point-contact junction resistance on the superconducting films, which is further enhanced in the non-superconducting samples of more oxygen disorders. The origination of NSG can be understood in the framework of Altshuler-Aronov-Lee (AAL) theory, where the disorder-induced electron-electron interactions suppress the density of states and thereby result in a soft Coulomb gap., Comment: 5 pages,4 figures