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The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω−1 to 0.0007 Ω−1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V−1s−1 to 400 cm2V−1s−1 and electron mobility decreased from 800 cm2V−1s−1 to 200 cm2V−1s−1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR]

When using transformer insulation oil as a liquid dielectric, the oil is easily polluted by the solid particles generated in the operation of the transformer, and these metallic impurity particles have a significant impact on the insulation performance inside the power transformer. The force of the metal particles suspended in the flow insulation oil is multidimensional, which will lead to a change in the movement characteristics of the metal particles. Based on this, this study explored the motion rules of suspended metallic impurity particles in mobile insulating oil in different electric field environments and the influencing factors. A multiphysical field model of the solid–liquid two-phase flow of single-particle metallic impurity particles in mobile insulating oil was constructed using the dynamic analysis method, and the particles' motion characteristics in the oil in different electric field environments were simulated. The motion characteristics of metallic impurity particles under conditions of different particle sizes, oil flow velocities, and insulation oil qualities and influencing factors were analyzed to provide theoretical support for the detection of impurity particles in transformer insulation oil and enable accurate estimations of the location of equipment faults. Our results show that there are obvious differences in the trajectory of metallic impurity particles under different electric field distributions. The particles will move towards the region of high field intensity under an electric field, and the metallic impurity particles will not collide with the electrode under an AC field. When the electric field intensity and particle size increase, the trajectory of the metallic impurity particles between electrodes becomes denser, and the number of collisions between particles and electrodes and the motion speed both increase. Under the condition of a higher oil flow velocity, the number of collisions between metal particles and electrodes is reduced, which reduces the possibility of particle agglomeration. When the temperature of the insulation oil changes and the quality deteriorates, its dynamic viscosity changes. With a decrease in the dynamic viscosity of the insulation oil, the movement of the metallic impurity particles between the electrodes becomes denser, the collision times between the particles and electrodes increase, and the maximum motion speed of the particles increases. [ABSTRACT FROM AUTHOR]

Highly sensitive uncooled mid-wave infrared (MWIR) photodetectors have a very wide range of applications ranging from the sensor and image to communications. Traditional MWIR detection semiconductors require liquid nitrogen cooling to depress dark current, which impeded the wide applications of devices. Here, we report a metal electrode-enhanced double parallel BP/InSe/BP van der Waals heterostructure uncooled MWIR photodetector. The device exhibits ultrahigh light on/off ratio of 108 and a very low dark current of 0.16 pA. The competitive performance includes high photoresponsivity (R) of 27.8 A W−1, excellent specific detectivity (D*) of 3.8 × 1012 cm Hz1/2 W−1, very low noise equivalent power (NEP) of 3.7 × 10−16 W Hz−1/2, and fast response speed of τr = 3.5 μs and τd = 2.4 μs in the visible range. Notably, in the MWIR range, the light on/off ratio of ∼104, NEP of 3.0 × 10−13 W Hz−1/2, and D* of 4.8 × 109 cm Hz1/2 W−1 was realized. The work sheds light on developing a high-performance uncooled MWIR photodetector by designed band alignment. [ABSTRACT FROM AUTHOR]

The microenvironment mediated by the microglia (MG) M1/M2 phenotypic switch plays a decisive role in the neuronal fate and cognitive function of Alzheimer's disease (AD). However, the impact of metabolic reprogramming on microglial polarization and its underlying mechanism remains elusive. This study reveals that cordycepin improved cognitive function and memory in APP/PS1 mice, as well as attenuated neuronal damage by triggering MG‐M2 polarization and metabolic reprogramming characterized by increased OXPHOS and glycolysis, rather than directly protecting neurons. Simultaneously, cordycepin partially alleviates mitochondrial damage in microglia induced by inhibitors of OXPHOS and glycolysis, further promoting MG‐M2 transformation and increasing neuronal survival. Through confirmation of cordycepin distribution in the microglial mitochondria via mitochondrial isolation followed by HPLC‐MS/MS techniques, HKII and PDK2 are further identified as potential targets of cordycepin. By investigating the effects of HKII and PDK2 inhibitors, the mechanism through which cordycepin targeted HKII to elevate ECAR levels in the glycolysis pathway while targeting PDK2 to enhance OCR levels in PDH‐mediated OXPHOS pathway, thereby inducing MG‐M2 polarization, promoting neuronal survival and exerting an anti‐AD role is elucidated. [ABSTRACT FROM AUTHOR]

Polarization‐sensitive infrared (IR) photodetection plays an important role in fiber optic communication, environmental monitoring, and remote sensing imaging. Semiconductors with quasi‐1D crystal structures exhibit unique optical and electrical properties due to their 1D carrier transport channels and large surface area‐to‐volume ratio, offering the possibility of high‐performance photodetectors with high photogain (G), polarization sensitivity photodetection. Herein, an ultra‐broadband photodetection (405 nm–10.6 µm) based on a quasi‐1D (TaSe4)2I single‐crystal nanowire is reported. The (TaSe4)2I photodetector exhibits excellent polarization‐sensitive photodetection, with a high dichroic ratio of Imax/Imin = 2.32 under 637 nm illumination. Notably, the (TaSe4)2I nanowire photodetector exhibits a competitive performance in uncooled mid‐wave infrared (MWIR) detection with a high photoresponsivity (R) of 110.5 AW−1 and specific detectivity (D*) of 4.8 × 1010 cmHz1/2W−1. Moreover, in the long‐wave infrared (LWIR) spectral range, an R of 67.6 mAW−1 is demonstrated at room temperature (RT). The (TaSe4)2I nanowire photodetector enables significant advancements for polarization‐sensitive and uncooled MWIR and LWIR photodetection. [ABSTRACT FROM AUTHOR]

Aqueous Zn batteries, which use metallic Zn as anodes, have gained significant attention due to their affordability and high safety standards. However, these Zn anodes are plagued by issues such as Zn dendritic growth and side reactions, including corrosion and hydrogen evolution. One straightforward yet effective approach to mitigate these issues is to apply protective coatings to the Zn anodes to enhance their reversibility. It is generally believed that these protective layers should have a high affinity for Zn. Contrarily, this study proposes that non‐conductive coatings should form a strong binding with H+ ions while maintaining a weaker interaction with Zn2+ ions, thereby ensuring a higher selectivity for H+ over Zn2+. This concept is illustrated using zirconium dioxide (ZrO2), an ionic conductor that meets these criteria and effectively curbs side reactions and dendritic growth of Zn. Remarkably, Zn anodes coated with ZrO2 layer demonstrate a lifespan exceeding 6000 h at 1 mA cm−2 and 1 mAh cm−2, significantly outperforming uncoated ones, which last <200 h. This discovery introduces a novel design principle for insulating surface coatings, potentially applicable not only for Zn but also for other metal anodes. [ABSTRACT FROM AUTHOR]

Aqueous Zn batteries, which use metallic Zn as anodes, have gained significant attention due to their affordability and high safety standards. However, these Zn anodes are plagued by issues such as Zn dendritic growth and side reactions, including corrosion and hydrogen evolution. One straightforward yet effective approach to mitigate these issues is to apply protective coatings to the Zn anodes to enhance their reversibility. It is generally believed that these protective layers should have a high affinity for Zn. Contrarily, this study proposes that non‐conductive coatings should form a strong binding with H+ ions while maintaining a weaker interaction with Zn2+ ions, thereby ensuring a higher selectivity for H+ over Zn2+. This concept is illustrated using zirconium dioxide (ZrO2), an ionic conductor that meets these criteria and effectively curbs side reactions and dendritic growth of Zn. Remarkably, Zn anodes coated with ZrO2 layer demonstrate a lifespan exceeding 6000 h at 1 mA cm−2 and 1 mAh cm−2, significantly outperforming uncoated ones, which last <200 h. This discovery introduces a novel design principle for insulating surface coatings, potentially applicable not only for Zn but also for other metal anodes. [ABSTRACT FROM AUTHOR]

Narrow bandgap 2D layered material platinum selenide (PtSe2) with good environmental stability, high carrier mobility, and high light absorption, has been widely investigated for uncooled midwave‐infrared (MWIR) photodetection. However, the phototransistor based on the PtSe2 operation at room temperature suffered from the high dark current and background noise. Here, a graphene (G)‐enhanced G‐WSe2/PtSe2 hetero‐diode placed on a metal electrode is reported. To enhance the photogain, a graphene layer placed on the WSe2/PtSe2 heterodiode as a local gating layer is designed. The device exhibits an ultra‐high light on/off ratio of up to 108 and ultra‐fast photoresponse speed with raising time τr = 0.9 µs and decay time of τd = 1.5 µs in the visible spectra range. Notably, ultrabroad band photoresponse from 405 to 3366 nm is demonstrated under the self‐power model. Notably, the device presented a competitive photovoltaic effect with a high energy conversion efficiency (PCE) of 3.45%. The results pave the way toward a new approach to tuning the performance of the atomic thin layered materials photodetector. [ABSTRACT FROM AUTHOR]

Graphene superlattices have simple and controllable electronic band structures, which can also be electrostatically tuned. They have been widely studied for band engineering and strong correlated physics, and have led to the discovery of a variety of exciting phenomena. To experimentally study the physics of graphene superlattices in a systematic way, it is desirable to control the structure parameters, which barely exist at the moment, onsite. Here, a tunable superlattice with graphene and a deformable gating structure is demonstrated. The period and duty cycle of the nano-gating, and furthermore of the superlattice potential, can be tuned through altering the shape of the gating structure with piezo-actuators, offering a tunable band structure. The tuning of the electronic band structures of both a two-dimensional and a one-dimensional superlattice is demonstrated with numerical simulations, offering a new approach for tunable electronic and photonic devices. [ABSTRACT FROM AUTHOR]