1. Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide
- Author
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Nichols, J., Weerasooriya, C. Sandamali, and Brill, J. W.
- Subjects
Condensed Matter - Strongly Correlated Electrons ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 seconds. The square-wave response shows that the dynamic response to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects., Comment: 13 pages, 6 figures, to be published in Journal of Physics: Cond. Matt
- Published
- 2009
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