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The construct Creativity has been the subject matter of voluminous, interdisciplinary research and has attracted extensive scholarly attention for many decades. While the topic of creativity attracts the attention of a diverse range of scholars in the field of psychology, recent bibliographic studies have confirmed that creativity is an active area of study in the area of I/O psychology. Hence, it would be informative to examine contemporary scholarship on the subject matter of creativity and its diverse applications in the business world. To that end, the current study presents a brief summary of recent scholarly articles on the nexus of creativity applied to organizational settings. In an intensive overview of contemporary (2016-2024) studies in this area, the authors identify 20 key articles that represent this body of research and present a brief synopsis of each study. The main areas of research focus were the wide span of international and cross-national investigations, myriad theoretical perspectives applied to organizational dynamics, and employee/team creativity as a function of different leadership styles. These findings have implications for assessment in that the potential for creative response patterns of business personnel may be a prominent feature evident in projective testing. [ABSTRACT FROM AUTHOR]

Gadolinium-based contrast agents are increasingly used in clinical practice. While these pharmaceuticals are verified causal agents in nephrogenic systemic fibrosis, there is a growing body of literature supporting their role as causal agents in symptoms associated with gadolinium exposure after intravenous use and encephalopathy following intrathecal administration. Gadolinium-based contrast agents are multidentate organic ligands that strongly bind the metal ion to reduce the toxicity of the metal. The notion that cationic gadolinium dissociates from these chelates and causes the disease is prevalent among patients and providers. We hypothesize that non-ligand-bound (soluble) gadolinium will be exceedingly low in patients. Soluble, ionic gadolinium is not likely to be the initial step in mediating any disease. The Kidney Institute of New Mexico was the first to identify gadolinium-rich nanoparticles in skin and kidney tissues from magnetic resonance imaging contrast agents in rodents. In 2023, they found similar nanoparticles in the kidney cells of humans with normal renal function, likely from contrast agents. Wesuspect these nanoparticles are the mediators of chronic toxicity from magnetic resonance imaging contrast agents. This article explores associations between gadolinium contrast and adverse health outcomes supported by clinical reports and rodent models. [ABSTRACT FROM AUTHOR]

Aluminum oxide (Al2O3) nanopowder is spin‐coated onto both sides of commercial polypropene separator to create artificial solid‐electrolyte interphase (SEI) and artificial cathode electrolyte interface (CEI) in potassium metal batteries (KMBs). This significantly enhances the stability, including of KMBs with Prussian Blue (PB) cathodes. For example, symmetric cells are stable after 1,000 cycles at 0.5 mA/cm2–0.5 mAh/cm2 and 3.0 mA/cm2–0.5 mAh/cm2. Alumina modified separators promote electrolyte wetting and increase ionic conductivity (0.59 vs. 0.2 mS/cm) and transference number (0.81 vs. 0.23). Cryo‐stage focused ion beam (cryo‐FIB) analysis of cycled modified anode demonstrates dense and planar electrodeposits, versus unmodified baseline consisting of metal filaments (dendrites) interspersed with pores and SEI. Alumina‐modified CEI also suppresses elemental Fe crossover and reduces cathode cracking. Mesoscale modeling of metal – SEI interactions captures crucial role of intrinsic heterogeneities, illustrating how artificial SEI affects reaction current distribution, conductivity and morphological stability. [ABSTRACT FROM AUTHOR]

Gold–germanium (Au x Ge 1 − x ) solid solutions have been demonstrated as highly sensitive thin film thermometers for cryogenic applications. However, little is known regarding the performance of the films for thicknesses less than 100 nm. In response, we report on the resistivity and temperature coefficient of resistance (TCR) for sputtered films with thicknesses ranging from 10 to 100 nm and annealed at temperatures from 22 to 200 ° C. The analysis is focused upon composition x = 0.17 , which demonstrates a strong temperature sensitivity over a broad range. The thinnest films are found to provide an enhancement in TCR, which approaches 20% K − 1 at 10 K. Furthermore, reduced anneal temperatures are required to crystallize the Ge matrix and achieve a maximum TCR for films of reduced thickness. These features favor the application of ultra-thin films as high-sensitivity, on-device thermometers in micro- and nanolectromechanical systems. [ABSTRACT FROM AUTHOR]

Single-walled carbon nanotube (SWCNT) thin films were synthesized by using a floating catalyst chemical vapor deposition (FCCVD) method with a low flow rate (200 sccm) of mixed gases (Ar and H2). SWCNT thin films with different thicknesses can be prepared by controlling the collection time of the SWCNTs on membrane filters. Transmission electron microscopy (TEM) showed that the SWCNTs formed bundles and that they had an average diameter of 1.46 nm. The Raman spectra of the SWCNT films suggested that the synthesized SWCNTs were very well crystallized. Although the electrical properties of SWCNTs have been widely studied so far, the Hall effect of SWCNTs has not been fully studied to explore the electrical characteristics of SWCNT thin films. In this research, Hall effect measurements have been performed to investigate the important electrical characteristics of SWCNTs, such as their carrier mobility, carrier density, Hall coefficient, conductivity, and sheet resistance. The samples with transmittance between 95 and 43% showed a high carrier density of 1021–1023 cm−3. The SWCNTs were also treated using Brønsted acids (HCl, HNO3, H2SO4) to enhance their electrical properties. After the acid treatments, the samples maintained their p-type nature. The carrier mobility and conductivity increased, and the sheet resistance decreased for all treated samples. The highest mobility of 1.5 cm2/Vs was obtained with the sulfuric acid treatment at 80 °C, while the highest conductivity (30,720 S/m) and lowest sheet resistance (43 ohm/square) were achieved with the nitric acid treatment at room temperature. Different functional groups were identified in our synthesized SWCNTs before and after the acid treatments using Fourier-Transform Infrared Spectroscopy (FTIR). [ABSTRACT FROM AUTHOR]

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device's structure, electrical properties, and material degradation. [ABSTRACT FROM AUTHOR]