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Epitaxial semiconductor quantum dots (QDs) are a promising resource for quantum light generation and the realization of non-linear quantum photonic elements operating at the single-photon level. Their random spatial distribution resulting from their self-organized nature, however, restrains the fabrication yield of quantum devices with the desired functionality. As a solution, the QDs can be imaged and localized, enabling deterministic device fabrication. Due to the significant electronic noise of camera sensors operating in the telecommunication C-band, $1530-1560~\mathrm{nm}$, this technique remained challenging. In this work, we report on the imaging of QDs epitaxially grown on InP with emission wavelengths in the telecom C-band demonstrating a localization accuracy of $80~\mathrm{nm}$. This is enabled by the hybrid integration of QDs in a planar sample geometry with a bottom metallic reflector to enhance the out-of-plane emission. To exemplify our approach, we successfully fabricate circular Bragg grating cavities around single pre-selected QDs with an overall cavity placement uncertainty of $90~\mathrm{nm}$. QD-cavity coupling is demonstrated by a Purcell enhancement up to $\sim5$ with an estimated photon extraction efficiency of $(16.6\pm2.7)\%$ into a numerical aperture of $0.4$. We demonstrate triggered single-photon emission with $g^{(2)}(0)=(3.2\pm0.6)\times10^{-3}$ and record-high photon indistinguishability associated with two-photon interference visibilities of $V = (19.3\pm2.6)\%$ and $V_{\mathrm{PS}} = 99.8^{+0.2}_{-2.6}\%$ without and with temporal postselection, respectively. While the performance of our devices readily enables proof-of-principle experiments in quantum information, further improvements in the yield and coherence may enable the realization of non-linear devices at the single photon level and advanced quantum networks at the telecom wavelength., Comment: 9 pages, 4 figures, Supplemental Material: 20 pages, 18 figures more...