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Towed decoy can simulate the time domain and frequency domain characteristics of target in radar beam and form effective angle deception. In order to improve the radar ability to countermeasure towed decoy, this study extracts and uses the radar diagonal difference channel in the conventional monopulse radar. The characteristic of diagonal difference channel is analysed. Then, the equations of sum channel, azimuth difference channel, elevation difference channel, and diagonal difference channel are established. By solving the equations, the angles and amplitude of decoy and target are obtained. Decoy recognition method is proposed. The new method can obtain the angles of decoy and target using only one pulse, and recognise decoy steadily using several pulses. The simulation results confirm the effectiveness of the new method.

Semiconductive transition metal dichalcogenides (TMDs) have been considered as next generation semiconductors, but to date most device investigations are still based on microscale exfoliation with a low yield. Wafer scale growth of TMDs has been reported but effective doping approaches remain challenging due to their atomically thick nature. This work reports the synthesis of wafer-scale continuous few-layer PtSe2 films with effective doping in a controllable manner. Chemical component analyses confirm that both n-doping and p-doping can be effectively modulated through a controlled selenization process. The electrical properties of PtSe2 films have been systematically studied by fabricating top-gated field effect transistors (FETs). The device current on/off ratio is optimized in two-layer PtSe2 FETs, and four-terminal configuration displays a reasonably high effective field effect mobility (14 and 15 cm2 V−1 s−1 for p-type and n-type FETs, respectively) with a nearly symmetric p-type and n-type performance. Temperature dependent measurement reveals that the variable range hopping is dominant at low temperatures. To further establish feasible application based on controllable doping of PtSe2, a logic inverter and vertically stacked p–n junction arrays are demonstrated. These results validate that PtSe2 is a promising candidate among the family of TMDs for future functional electronic applications.

Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives. [ABSTRACT FROM AUTHOR]

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation. [ABSTRACT FROM AUTHOR]

Mix‐dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero‐integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo‐thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W−1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero‐integration and multifunctions. [ABSTRACT FROM AUTHOR]

Integrated multifunctionality in visual information processing is crucial in the artificial intelligence era. Compared to the parallel human vision system, current bionic vision devices exhibit a complex structure with single functionality, challenging intelligent processing and integration. Here, a multisensory artificial synapse with a crossbar structure comprising graphene/α‐In2Se3/graphene layers is demonstrated, merging sensing, memory, and computing while mimicking various synaptic properties. The Schottky barrier height is modulated by the polarization of ferroelectric semiconductor α‐In2Se3, enabling reconfigurable device conductance and photoresponsivity. This conductance emulates synaptic short‐term and long‐term plasticity through electrical pulse modulation, boasting a rapid 40 ns programming speed. The device also exhibits linearly regulated photoresponsivity under illumination, with synaptic plasticity from optical pulses. The fusion of electronic and optoelectronic devices enables both image front‐end processing and advanced post‐processing. In‐sensor front‐end processing enhances subsequent processing efficiency, with pattern recognition accuracy reaching 97%. This design fosters the advancement of multisensory and highly integrated neuromorphic vision systems. [ABSTRACT FROM AUTHOR]

Two-dimensional GaGeTe flakes with different thicknesses from 80 to 2.2 nm (bilayer) were exfoliated and transferred to a SiO2/Si substrate. A series of samples with different thicknesses were prepared and identified by optical microscopy, atomic force microscopy, and Raman spectrum. Raman modes strongly dependent on the layer thickness and characteristic Raman-active modes for few-layer (FL) GaGeTe flakes are demonstrated. These vibration modes of FL GaGeTe show a linear red-shift phenomenon with increasing temperature and their full width at half maximum of the Raman mode exhibits a weak temperature dependence below 200 K, and then, a linear increase with temperature. The electrical conductivity is 96.48 S/cm for 74 nm flakes and drops exponentially to 2.27 × 10−7 S/cm for 7 nm ones because of the bandgap widening with the decrease of layer thickness, which is evidenced by the work function increase from 4.4 to 4.96 eV, when the thickness decreases from 80 to 2.2 nm. Moreover, the electrical conductivity performs two different temperature dependence behaviors on the thickness, indicating a transition from semimetal for bulk to semiconductor for FL GaGeTe, which agrees well with that of the theoretical calculation. [ABSTRACT FROM AUTHOR]

The realization of a controllable transparent conducting system with selective light transparency is crucial for exploring many of the most intriguing effects in top‐illuminated optoelectronic devices. However, the performance is limited by insufficient electrical conductivity, low work function, and vulnerable interface of traditional transparent conducting materials, such as tin‐doped indium oxide. Here, it is reported that two‐dimensional (2D) titanium carbide (Ti3C2Tx) MXene film acts as an efficient transparent conducting electrode for the lead sulfide (PbS) colloidal quantum dots (CQDs) photodiode with controllable near infrared transmittance. The solution‐processed interface engineering of MXene and PbS layers remarkably reduces the interface defects of MXene/PbS CQDs and the carrier concentration in the PbS layer. The stable Ti3C2Tx/PbS CQDs photodiodes give rise to a high specific detectivity of 5.51 × 1012 cm W−1 Hz1/2, a large dynamic response range of 140 dB, and a large bandwidth of 0.76 MHz at 940 nm in the self‐powered state, ranking among the most exceptional in terms of comprehensive performance among reported PbS CQDs photodiodes. In contrast with the traditional photodiode technologies, this efficient and stable approach opens a new horizon to construct widely used infrared photodiodes with CQDs and MXenes. [ABSTRACT FROM AUTHOR]