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Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe3GaTe2 provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and spatially engineered using magnetic force microscopy (MFM). The skyrmion lattice is realized by specific field-cooling process, and can be further controllably erased and painted via delicate manipulation of tip stray field. The skyrmion lattice with opposite topological charges (S = +1 or -1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in-situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe3GaTe2 not only serves as a potential building block for room-temperature skyrmion-based spintronic devices, but also presents promising prospects for Fe3GaTe2-based heterostructures with the engineered topological spin textures.

Fe5GeTe2 single crystals can be divided into nonquenched (NQ) and quench-cooled (QC) phases with different magnetic properties. A comprehensive understanding of the magnetic property variations in the NQ and QC phases is imperative for guiding Fe5GeTe2 towards spintronics applications; however, it remains elusive. Here, we report a real-space study on the structural and magnetic properties of these two magnetic phases using cryogenic magnetic force microscopy and scanning tunneling microscopy. The thermal history introduces disorder and order to the Fe(1) sites, resulting in the NQ and QC phases exhibiting global and broken inversion symmetry, respectively. The observed magnetic domain transitions (branching to labyrinthine) in the spin reorientation process and the distinct 3D spin textures stabilized by magnetic dipolar interaction observed in field-dependent studies allow the NQ phase to exhibit a more resilient global magnetic state. In contrast, the QC phase exhibits enhanced magnetic anisotropy, resulting in a higher TC. Meanwhile, the Dzyaloshinskii-Moriya interaction (DMI) introduced by the broken inversion symmetry causes the QC phase to exhibit a localized magnetic state: no domain transformation occurs during spin reorientation, and irregular domain states are observed in field-related studies. Our work provides an important reference for understanding the complex magnetic properties in Fe5GeTe2., Comment: 18 pages,4 figures

Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intrinsic skyrmion state in van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flake. The ordering of skyrmion state is further analyzed. Our result suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.

We study surface states in the three-dimensional topological insulators Bi$_2$Te$_{3-x}$Se$_{x}$ (x = 0, 2, 3) by polarization resolved resonant Raman spectroscopy. By tracking the spectral intensity of the surface phonon modes with respect to the incident photon energy, we show that the surface phonons are qualitatively similar to their bulk counterparts. Using the resonant Raman excitation profile, we estimated the binding energy of the surface conduction bands relative to bulk conduction bands. In addition, we selectively excite the surface-to-bulk electronic continuum near the Fermi energy in Bi$_2$Se$_3$ to determine the strength of Fano interaction between the most prominent surface phonon and the surface-to-bulk continuum.

Magnetic topological insulators (MTIs) have received a lot of attention due to the existence of various quantum phenomena such as quantum anomalous Hall effect (QAHE) and topological magnetoelectric effect, etc. The intrinsic superlattice-like layered MTIs, MnBi2Te4/(Bi2Te3)n, have been extensively investigated mainly through the transport measurements, while the direct investigation of their superlattice-sensitive magnetic behaviors is relatively rare. Here, we report a microscopic real-space investigation of magnetic phase behaviors in MnBi4Te7 using cryogenic magnetic force microscopy (MFM). The intrinsic robust A-type antiferromagnetic (AFM), and emerged surface spin-flop (SSF), canted AFM (CAFM), ferromagnetic (FM)+CAFM, forced FM phases are sequentially visualized via the increased external magnetic field, in agreement with the metamagnetic behavior in the M-H curve. The temperature-dependent magnetic phase evolution behaviors are further investigated to obtain the complete H-T phase diagram of MnBi4Te7. The tentative local phase manipulation via the stray field of the magnetic tip is demonstrated by transforming the AFM to FM phase in its surface layers of MnBi4Te7. Our study the not only provide key real-space ingredients for understanding their complicated magnetic, electronic, and topological properties of these intrinsic MTIs, but also suggest new directions for manipulating spin textures and locally controlling their exotic properties.

Black phosphorene and its analogs have attracted intensive attention due to their unique puckered structures, anisotropic characteristics, and negative Poisson's ratio. The van der Waals heterostructures assembly by stacking different materials may show novel physical properties which the parent materials don't possess. In this work, the first-principles calculations were performed to study the mechanical properties of the BP/SnSe van der Waals heterostructure. Interestingly, a near-zero Poisson's ratio vzx was found in BP/SnSe heterostructure. In addition, compared to the parent materials BP and SnSe with strong in-plane anisotropic mechanical properties, the BP/SnSe heterostructure shows strongly suppressed anisotropy. Our findings suggest that the vdW heterostructure could show quite different mechanical properties from the parent materials and provide new opportunities for the mechanical applications of the heterostructures.

Compared to AgNbO3 based ceramics, the experimental investigations on the single crystalline AgNbO3, especially the ground state and ferroic domain structures, are not on the same level. Here in this work, based on successfully synthesized AgNbO3 single crystal using flux method, we observed the coexistence of ferroelastic and ferrielectric domain structures by a combination study of polarized light microscopy and piezoresponse force microscope, this finding may provide a new aspect for studying AgNbO3. The result also suggests a weak electromechanical response from the ferrielectric phase of AgNbO3 which is also supported by the transmission electron microscope characterization. Our results reveal that the AgNbO3 single crystal is in a polar ferrielectric phase at room temperature, clarifying its ground state which is controversial from the AgNbO3 ceramic materials.

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems., Comment: 19 pages, 4 figures

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate from the ferroelectric domain evolution during the bending, which is difficult to observe in experiments. Therefore, understanding the relation among the bending deformation, thickness of the films, and the domain dynamics is critical for their potential applications in flexible ferroelectric devices. Here, we reported the dynamics of ferroelectric polarization in the freestanding BaTiO3 ultrathin films in the presence of large bending deformation up to 40{\deg} using phase-field simulation. The ferroelectric domain evolution reveals the transition from the flux-closure to a/c domains with "vortex-like" structures, which caused by the increase of out-of-plane ferroelectric polarization. Additionally, by varying the film thickness in the identical bending situation, we found the a/c phase with "vortex-like" structure emerges only as the film thickness reached 12 nm or higher. Results from our investigations provide instructive information for the microstructure evolution of bending ferroelectric perovskite oxide films, which could serve as guide for the future application of ferroelectric films on flexible electronic devices.

Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by screening piezoelectricity. Our results show that the flexoelectricity reduces the nanopillar stiffness while the piezoelectricity enhances it. With careful design of the shape of the nanopillars and measuring their stiffness difference, the flexoelectric coefficient can be obtained with the piezoelectric contribution eliminated completely. This approach avoids the measurement of electrical properties with dynamic load, which helps to reduce the challenge of flexoelectric measurement at nanoscale. Our work will be beneficial to quantitative characterization of flexoelectric properties and design of flexoelectric devices at nanoscale.

We present a novel distributed union-find algorithm that features asynchronous parallelism and k-d tree based load balancing for scalable visualization and analysis of scientific data. Applications of union-find include level set extraction and critical point tracking, but distributed union-find can suffer from high synchronization costs and imbalanced workloads across parallel processes. In this study, we prove that global synchronizations in existing distributed union-find can be eliminated without changing final results, allowing overlapped communications and computations for scalable processing. We also use a k-d tree decomposition to redistribute inputs, in order to improve workload balancing. We benchmark the scalability of our algorithm with up to 1,024 processes using both synthetic and application data. We demonstrate the use of our algorithm in critical point tracking and super-level set extraction with high-speed imaging experiments and fusion plasma simulations, respectively., Comment: Accepted by IEEE Transactions on Visualization and Computer Graphics (IEEE TVCG Special Issue on IEEE PacificVis 2021)

Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

High performance thermoelectric devices requires materials with low lattice thermal conductivities. Many strategies, such as phonon engineering, have been made to reduce lattice thermal conductivity without simultaneously decrease of the charge transport performance. It is a simple and effective approach to use materials with heavy element to reduce the lattice thermal conductivity. Here, based on the first-principles calculations and phonon Boltzmann transport equations, we find the replacement of Zr with heavy element Hf in ZrNCl doesn't reduce the lattice thermal conductivity, instead, it surprisingly increases by about 4 times at 300K. This unusual lattice thermal conductivity is mainly attributed to the dramatic enhancement in phonon lifetimes in Hf compound, originating from the strong interatomic bonding due to lanthanide contraction. Our findings unveil the microscopic mechanisms of high thermal transport properties in materials with heavy element, providing an alternative strategy in materials design with low lattice thermal conductivity for thermoelectric applications such as power restoration and generation.

The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity is reported in monolayer SnTe system by transition metal (TM) doping. Based on first-principles calculations, the spontaneous spin polarization could be realized by TM doping in ferroelectric SnTe monolayer. In addition to in-plane ferroelectric polarization, the out-of-plane ferroelectric polarization emerges in Mn (Fe)-doped SnTe monolayer due to the internal displacement of TM from the surface. Interestingly, the crystalline field centered on TM and interaction between the dopant and Te gradually enhanced with the increment of atomic number of doping elements, which explains why the formation energy decreases. The realization of multiferroics in SnTe monolayer could provide theoretical guidance for experimental preparation of low-dimensional multiferroic materials.

Free-space optical time transfer that features high precision and flexibility will act a crucial role in near-future ground-to-satellite/inter-satellite clock networks and outdoor timing services. Here we propose a free-space optical flexible-binary-offset-carrier-modulated (FlexBOC-modulated) time transfer method. The utilized FlexBOC modulation could yield a comparative precision, although its occupied bandwidth is tremendously reduced by at least 97.5% compared to optical binary phase modulation. Meanwhile, the adoption of optical techniques eliminates the multi-path effect that is major limit in the current microwave satellite time transfer system. What's more, the time interval measurement avoids a continuous link that may be routinely broken by physical obstructions. For verification, a time transfer experiment with our home-built system between two sites separated by a 30-m free-space path outside the laboratory was conducted. Over a 15 h period, the time deviation is 2.3 ps in a 1-s averaging time, and averages down to 1.0 ps until ~60 s. The fractional frequency instability exhibits 4.0E-12 at a gate time of 1 s, and approaches to 2.6E10-15 at 10000 s.

Spin liquid ground states are predicted to arise within several distinct scenarios in condensed matter physics. The observation of these disordered magnetic states is particularly pervasive amongst a class of materials known as frustrated magnets, in which the competition between various magnetic exchange interactions prevents the system from adopting long-range magnetic order at low temperatures. Spin liquids continue to be of great interest due to their exotic nature and the possibility that they may support fractionalised excitations, such as Majorana fermions. Systems that allow for such phenomena are not only fascinating from a fundamental perspective but may also be practically significant in future technologies based on quantum computation. Here we show that the underlying antiferromagnetic sublattice in TbInO$_3$ undergoes a crystal field induced triangular-to-honeycomb dilution at low temperatures. The absence of a conventional magnetic ordering transition at the lowest measurable temperatures indicates that another critical mechanism must govern in the ground state selection of TbInO$_3$. We propose that anisotropic exchange interactions, mediated through strong spin-orbit coupling on the emergent honeycomb lattice of TbInO$_3$, give rise to a highly frustrated spin liquid., Comment: 23 pages, 5 figures, supporting information

Pursuing two-dimensional (2D) intrinsic ferromagnetism with high Curie temperature and great mechanical flexibility has attracted great interest in flexible spintronics. In the present work, we carried out a density functional theory (DFT) investigation on the 2D M2Se3 (M=Co, Ni and Pd) monolayers to understand their structural stabilities, electronic, magnetic and mechanical properties. Our results show that the Co2Se3 monolayer exhibits a fascinating half-metallic ferromagnetism with high Curie temperature (>700K). In addition, due to their unique buckling hinge-like structure, M2Se3 monolayers possess the large out-of-plane negative Poisson's ratio (NPR) and superior mechanical flexibility evidenced by their unusual critical strain two times greater than the well-known 2D materials. These findings imply that 2D M2Se3 family is the promising materials for the applications in the flexible and high-density spintronic nanodevices.

Recently, the observation of atomic thin film SnTe with a Curie temperature (Tc) higher than that of the bulk (Chang et. al., Science 353, 274 (2016)) has boosted the research on two-dimensional (2D) ferroic materials tremendously. However, the origin of such phenomenon has yet been thoroughly investigated, which hinder the understanding and design of novel materials with ferroic orders at 2D limit. By using the density functional theory, we investigated the structural and ferroelectrical properties of 2D SnTe, to reveal the thickness dependence. The calculated results demonstrate that the 2D SnTe automatically transform into periodical bilayer structure, resulting from the surface effect. Moreover, based on the double-well potential and atomic distortion analysis, we found the Tc of the 2D SnTe is higher than the bulk counterpart, and more surprisingly, the Tc exhibits an unusual non-monotonous dependence of thickness, featuring a pronounced atomic distortion and Curie temperature maximum at 8 atomic-layers. In addition, this non-monotonous dependence is sensitive to the external strain and it can be tuned easily by the external compressive strain.

Topological insulators are a class of band insulators with non-trivial topology, a result of band inversion due to the strong spin-orbit coupling. The transition between topological and normal insulator can be realized by tuning the spin-orbit coupling strength, and has been observed experimentally. However, the impact of chemical disorders on the topological phase transition was not addressed in previous studies. Herein, we report a systematic scanning tunneling microscopy/spectroscopy and first-principles study of the topological phase transition in single crystals of In doped Bi$_2$Se$_3$. Surprisingly, no band gap closure was observed across the transition. Furthermore, our spectroscopic-imaging results reveal that In defects are extremely effective "suppressors" of the band inversion, which leads to microscopic phase separation of topological-insulator-like and normal-insulator-like nano regions across the "transition". The observed topological electronic inhomogeneity demonstrates the significant impact of chemical disorders in topological materials, shedding new light on the fundamental understanding of topological phase transition., Comment: 16 pages, 5 figures