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This article argues that a society's level of social trust influences employers' hiring strategies. Employers can focus either on applicants' potential and select on foundational skills (e.g., social skills, math skills) or on their readiness and select on more-advanced skills (e.g., pricing a derivative). The higher (lower) the social trust—people's trust in their fellow members of society—the more (less) employers are willing to invest in employees and grant them role flexibility. Employers in higher-trust societies are therefore more attentive to applicants' potential, focusing more on foundational skills than on advanced skills. We empirically test this theory by using a novel dataset of more than 50 million job postings from the 28 European Union countries. We find that the higher a country's social trust, the more its employers require foundational skills instead of advanced skills. Our identification strategy takes advantage of multinational firms in our sample and uses measures of bilateral (country-to-country) trust to predict job requirements, while including an instrumental variable and fixed effects on country, year, employer, and occupation. These findings suggest a novel pathway by which social trust shapes employment practices and organizational strategies. [ABSTRACT FROM AUTHOR]

In order to obtain high-quality through-silicon via (TSV) arrays for high voltage applications, we optimized the fabrication processes of the Si holes, evaluated the dielectric layers, carried out hole filling by Cu plating, and detected the final structure and electric properties of the TSVs. The Si through-hole array was fabricated in an 8-inch Si substrate as follows: First, a blind Si hole array was formed by the Si deep reactive etching (DRIE) technique using the Bosch process, but with the largest width of the top scallops reduced to 540 nm and the largest notch elimidiameternated by backside grinding, which also opens the bottom ends of the Si blind holes and forms 500-μm-deep Si through holes. Then, the sidewalls of the Si holes were further smoothed by a combination of thermal oxidation and wet etching of the thermal oxide. The insulating capability of the dielectric layers was evaluated prior to metal filling by using a test kit. The metal filling of the through holes was carried out by bottom-up Cu electroplating and followed by annealing at 300 °C for 1 h to release the electroplating stress and to prevent possible large metal thermal expansion in subsequent high-temperature processes. The TSV arrays with different hole diameters and spacing were detected: no visible defects or structure peeling was found by scanning electron microscopy (SEM) observations, and no detectable interdiffusion between Cu and the dielectric layers was detected by energy dispersive X-ray (EDX) analyses. Electric tests indicated that the leakage currents between two adjacent TSVs were as low as 6.80 × 10−10 A when a DC voltage was ramped up from 0 to 350 V, and 2.86 × 10−9 A after a DC voltage was kept at 100 V for 200 s. [ABSTRACT FROM AUTHOR]